Molecular dynamics simulations of deep penetration by channeled ions during low‐energy ion bombardment of III–V semiconductors
作者:
N. G. Stoffel,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 2
页码: 651-658
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.586427
出版商: American Vacuum Society
关键词: MOLECULAR DYNAMICS CALCULATIONS;ION CHANNELING;PHYSICAL RADIATION EFFECTS;ETCHING;EV RANGE;ENERGY DEPENDENCE;III−V SEMICONDUCTORS
数据来源: AIP
摘要:
Molecular dynamics simulations are used to model the formation of deep crystalline damage during the low‐energy ion bombardment of semiconductor crystals. For beams of heavy ions at energies below a kilovolt, the average penetration range of the simulated trajectories is only a few nanometers. However, a small, but significant, fraction of the ions are found to scatter into 〈011〉 axial channels through which they propagate tens of nanometers below the surface. A model is developed to convert the simulated ion channeling probabilities into predictions of optical damage as a function of depth in the crystal. The results are used to explain the recent measurements of anomalous degradation of deep quantum wells during dry etching of III–V semiconductor heterostructures. The model is also used to evaluate several strategies intended to avoid this unintentional ion channeling and to reduce the creation of deep damage during low‐energy ion bombardment.
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