Justifying the simple diode equation
作者:
Michael J. Moloney,
期刊:
American Journal of Physics
(AIP Available online 1986)
卷期:
Volume 54,
issue 10
页码: 914-916
ISSN:0002-9505
年代: 1986
DOI:10.1119/1.14790
出版商: American Association of Physics Teachers
关键词: SEMICONDUCTOR DEVICES;ELECTRIC CURRENTS;CURRENT DENSITY;RECOMBINATION;CARRIER DENSITY;DOPED MATERIALS;IV CHARACTERISTIC
数据来源: AIP
摘要:
In elementary texts, derivations of the equationI=I0[exp(qV/kT)−1] (the ‘‘simple diode’’ equation) all depend on conditions valid when no current flows, an apparently contradictory situation. Because introductory texts justify this only qualitatively, it is desirable to do an explicit calculation which explores the limits of the equation when current actually does flow—a procedure carried out in this paper by manipulating the current density equations and integrating them across the space‐charge layer (SCL). The calculation shows the ‘‘simple diode equation’’ to be valid if the width of the SCL is small compared to the diffusion length of either an elecron or a hole. This implies relatively few collisions in the SCL and thus clarifies why SCL recombination may also be neglected in the ‘‘simple diode’’ regime.
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