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Justifying the simple diode equation

 

作者: Michael J. Moloney,  

 

期刊: American Journal of Physics  (AIP Available online 1986)
卷期: Volume 54, issue 10  

页码: 914-916

 

ISSN:0002-9505

 

年代: 1986

 

DOI:10.1119/1.14790

 

出版商: American Association of Physics Teachers

 

关键词: SEMICONDUCTOR DEVICES;ELECTRIC CURRENTS;CURRENT DENSITY;RECOMBINATION;CARRIER DENSITY;DOPED MATERIALS;IV CHARACTERISTIC

 

数据来源: AIP

 

摘要:

In elementary texts, derivations of the equationI=I0[exp(qV/kT)−1] (the ‘‘simple diode’’ equation) all depend on conditions valid when no current flows, an apparently contradictory situation. Because introductory texts justify this only qualitatively, it is desirable to do an explicit calculation which explores the limits of the equation when current actually does flow—a procedure carried out in this paper by manipulating the current density equations and integrating them across the space‐charge layer (SCL). The calculation shows the ‘‘simple diode equation’’ to be valid if the width of the SCL is small compared to the diffusion length of either an elecron or a hole. This implies relatively few collisions in the SCL and thus clarifies why SCL recombination may also be neglected in the ‘‘simple diode’’ regime.

 

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