摘要:
AbstractVery high photocurrent densities of up to 80 mA/cm2, observed at H2‐evolving p‐Si electrodes having high electric resistivity under AM1 (100 mW/cm2) illumination, are caused by the electron injection from the back side metal into the conduction band of p‐Si.
ISSN:0931-7597
DOI:10.1002/chin.198918338
出版商:WILEY‐VCH Verlag GmbH
年代:2016
数据来源: WILEY