摘要:

The device fabrication for a monolithic integration of a waveguide (WG), a photodiode (PD) and a junction field-effect transistor (JFET) in the InGaAs/InP material system is described. In an optimised WG/PD layer sequence, grown by metal organic vapour-phase epitaxy (MOVPE), JFETs have been realised using local Si and Be ion implantations. The JFETs (1.5 μm × 200 μm) have a maximum transconductance of 160 mS/ mm and a cutoff frequency of 12 GHz. The PDs are vertically coupled to the InGaAsP WG by evanescent field coupling. They show a low dark current of 3 nA and a 3 dB bandwidth of 5 GHz at −10 V bias. With the presented layer structure, a transimpedance receiver OEIC with monolithically integrated WG has been realised. The receiver sensitivity is −27.3 dBm at a BER of 10−9for 400 Mbit/s data rate.

DOI:10.1049/ip-j.1993.0012

出版商:IEE    

年代:1993

数据来源: IET

摘要:

A grating spectrometer integrated monolithically in the InGaAsP system with a photodiode array for a dense WDM system is presented for the 1.5 μm wavelength region. The chip provides more than 30 wavelength channels with a spacing of 4 nm, a channel crosstalk of approximately −15 dB, an internal photodiode efficiency of 90% and a photodiode capacitance of 0.33 pF. The chip needs no optical adjustments. It is therefore well suited to mass production.

DOI:10.1049/ip-j.1993.0013

出版商:IEE    

年代:1993

数据来源: IET

摘要:

A simple and highly reliable processing technique for ridge waveguide InGaAs/GaAs SQW lasers is proposed. Comparison is made with other more conventional processing sequences and measurements show that the characteristics of the lasers obtained by this simple method are at least as good as and sometimes better than those made by the other processing sequences. It is shown that the simplicity of the process guarantees a high yield. The high performances of these lasers are further optimised by the application of optical coatings.

DOI:10.1049/ip-j.1993.0014

出版商:IEE    

年代:1993

数据来源: IET

摘要:

The authors have calculated the gain-current characteristics of a 70 A In0.2Ga0.8As—GaAs strained layer quantum well laser assuming strictk-selection and including spectral broadening due to carrier–carrier interactions at high carrier densities. The broadening lifetime, which is dependent upon energy and carrier density, has been calculated from first principles using an intraband Auger-type process. The effect of both electron–electron and hole-hole scattering has been included in the calculation of this lifetime. The paper compares the effect on the gain-current characteristics of the energy dependent lifetime and of a constant lifetime of 10−13s used typically in other calculations.

DOI:10.1049/ip-j.1993.0015

出版商:IEE    

年代:1993

数据来源: IET

摘要:

It is shown that application of biaxial tension to the active region of a bulk-like III–V semiconductor laser can significantly enhance TM gain compared to TE gain and reduce the threshold current density, owing to improved suppression of spontaneous emission polarised in the growth plane of the laser structure. The differential gain is enhanced compared to unstrained structures, and a larger peak gain can be achieved than in comparable structures under biaxial compression. The authors include the spin-split-off band in their calculations and show that the strain-induced interaction with this band has a significant influence on the character of the valence states, particularly in tensile-strained structures. Using idealised quantum-well calculations, the authors investigate the effect of changing the valence band massmvwith respect to the conduction band mass and how this affects the radiative properties of a laser structure. It is shown that, although it is indeed the case that the transparency carrier density always increases with increasingmu, for the authors' ideal model, the radiative current density can decrease.

DOI:10.1049/ip-j.1993.0016

出版商:IEE    

年代:1993

数据来源: IET