摘要:

A dielectric fibre with a refractive index higher than its surrounding region is a form of dielectric waveguide which represents a possible medium for the guided transmission of energy at optical frequencies. The particular type of dielectric-fibre waveguide discussed is one with a circular cross-section. The choice of the mode of propagation for a fibre waveguide used for communication purposes is governed by consideration of loss characteristics and information capacity. Dielectric loss, bending loss and radiation loss are discussed, and mode stability, dispersion and power handling are examined with respect to information capacity. Physicalrealisation aspects are also discussed. Experimental investigations at both optical and microwave wavelengths are included.

DOI:10.1049/ip-j.1986.0030

出版商:IEE    

年代:1986

数据来源: IET

摘要:

At a time when the best available optical glass had a loss of 600 dB/km, when the break-even point for optical communications was put at 20 dB/km, and when the rival copper waveguide system was claiming 2–3 dB/km in field trials, the single-mode fibre project was born at the Post Office Research Station, Dollis Hill, and had the nerve to survive and to conquer

DOI:10.1049/ip-j.1986.0031

出版商:IEE    

年代:1986

数据来源: IET

摘要:

A brief account is given of the early years of optical communications. This covers the early examination of a variety of options, culminating in a commitment to optical fibres and the birth of commercial systems.

DOI:10.1049/ip-j.1986.0033

出版商:IEE    

年代:1986

数据来源: IET

摘要:

Southampton University was one of the first to carry out research into optical fibres. The paper summarises why research started at Southampton, the direction it took and some of its successes, and finishes with some speculations about the future.

DOI:10.1049/ip-j.1986.0034

出版商:IEE    

年代:1986

数据来源: IET

摘要:

The US Navy was one of the first organisations to use optical fibres. The paper gives a brief summary of some of the applications of optical fibres and their success in the US Navy, and concludes with some indications of the directions which future developments should take.

DOI:10.1049/ip-j.1986.0035

出版商:IEE    

年代:1986

数据来源: IET

摘要:

The evolution of semiconductor optical sources and photodetectors for optical communication systems is described. From rudimentary GaAsp–njunction emitters and silicon photodiodes in the mid-1960s, the paper charts progress towards the much more sophisticated multilayer laser structures and III–V avalanche photodetectors being made in the mid-1980s. Technological breakthroughs are identified, as well as some of the major problems that have had to be solved, such as well controlled epitaxial growth and device reliability.

DOI:10.1049/ip-j.1986.0036

出版商:IEE    

年代:1986

数据来源: IET

摘要:

Recent advances in material fabrication techniques, analytic tools and computational power have greatly enhanced the prospect of making electrons and photons work, respectively, in their best roles. 1012bit/s operating speed might be reached. Two basic research questions arise: (i) what are the configurational, physical, and material constraints which prevent devices from operating at this speed, and can these constraints be altered? (ii) If 1012bit/s can indeed be reached, what system functional building blocks should be generated? Research directions in this area are suggested.

DOI:10.1049/ip-j.1986.0037

出版商:IEE    

年代:1986

数据来源: IET

摘要:

Progress in semiconductor optoelectronic devices in the past 20 years has been significant. With the progress of optical fibres, a new era of communication has been established by overcoming major difficulties in device technologies. However, if one considers the present status of optoelectronic technologies, one finds that a large potential advantage of semiconductor technologies, that of 'integration', has been left unrevealed. The monolithic integration of optical and electrical devices, called optoelectronic integrated circuit (OEIC), will result in a big improvement in optoelectronic technology.The Optoelectronics Joint Research Laboratory (OJL) has been established to develop new generic technologies for optoelectronic integration. Significant progress in the material process technologies has been obtained in bulk GaAs crystal growth, a new maskless dry process using focused ion beam doping, MBE and dry etching for GaAs. The future evolution of optoelectronic technology and OEIC markets is also discussed.

DOI:10.1049/ip-j.1986.0038

出版商:IEE    

年代:1986

数据来源: IET