ISSN:0031-9228    

DOI:10.1063/1.2810433

出版商:AIP    

年代:1990

数据来源: AIP

ISSN:0031-9228    

DOI:10.1063/1.2810434

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

In the sweltering summer of 1988 the public heard claims that global warming from the greenhouse effect had definitely begun. In the chilly winter of 1989/90 they are hearing skeptics question whether it will ever arrive. Just as temperatures fluctuate about an average value, the mean opinion on global warming falls somewhere between these extremes.

ISSN:0031-9228    

DOI:10.1063/1.2810435

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

This special issue explores some of the most exciting recent trends in semiconductor electron devices. These developments have been characterized by a strong interplay among three areas: the physical understanding of electronic transport, materials science techniques, particularly epitaxial growth of semiconductor thin films, and device fabrication technologies such as nanolithography. The interdependence of these factors has been the hallmark of this field since the invention of the transistor.

ISSN:0031-9228    

DOI:10.1063/1.881221

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

A decade ago the fabrication and study of electron devices whose smallest features were just under 1 micron in size represented the forefront of the field. Today that forefront has moved down an order of magnitude to 100 nanometers, engendering new terminology based on the prefixnano, from the Greek word for dwarf: “nanoscale devices,” “nanolithography,” “nanofabrication.”

ISSN:0031-9228    

DOI:10.1063/1.881222

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

A deep, quantitative understanding of the behavior of electronic devices is necessary to ensure that the circuits made by integrating those devices will have the desired characteristics. Such understanding of the device behavior has become all the more important as the devices have become smaller and many more of them are packed in smaller chips at ever higher densities. Supercomputers have been increasingly used to simulate small devices in recent years. There are several reasons for this development. First, boundary conditions become important as the device size decreases, and this makes the task of simulating the devices more complex. Second, several characteristic quantities that determine the behavior of a device, such as carrier concentration and velocity, do not vary gradually. Third and most important, boundary conditions generally lead to the quantization of physical quantities, and many novel quantization effects become significant and observable in nanometer structures.

ISSN:0031-9228    

DOI:10.1063/1.881223

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

In semiconductor microelectronics, small distances and high speeds are closely related. Transistors with base lengths of only a few tens of nanometers have electron transit times that can be less than 1 picosecond. Indeed, this very fact has motivated much of the intense interest in very‐small‐scale electronic devices: To make something faster, one generally must make it smaller.

ISSN:0031-9228    

DOI:10.1063/1.881224

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

The invention of the transistor in the late 1940s has had tremendous technological ramifications, heralding as it did an era of semiconductor microelectronics. At the heart of the transistor's device applications are its ability to amplify and the ease with which it can be fabricated in very complex integrated circuits.

ISSN:0031-9228    

DOI:10.1063/1.881225

出版商:AIP    

年代:1990

数据来源: AIP

ISSN:0031-9228    

DOI:10.1063/1.2810436

出版商:AIP    

年代:1990

数据来源: AIP

ISSN:0031-9228    

DOI:10.1063/1.2810437

出版商:AIP    

年代:1990

数据来源: AIP