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| 51. |
Mechanization for production of high-frequency electrochemical transistors |
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Proceedings of the IEE - Part B: Electronic and Communication Engineering,
Volume 106,
Issue 17S,
1959,
Page 1163-1167
S.L.Parsons,
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PDF (753KB)
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DOI:10.1049/pi-b-2.1959.0211
出版商:IEE
年代:1959
数据来源: IET
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| 52. |
A gauge for the precision measurement of the thickness of germanium and silicon wafers |
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Proceedings of the IEE - Part B: Electronic and Communication Engineering,
Volume 106,
Issue 17S,
1959,
Page 1168-1170
D.Baker,
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PDF (376KB)
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摘要:
Some of the difficulties associated with the precision measurement of the thickness of thin germanium and silicon wafers, together with several possible methods of measurement, are briefly discussed. A gauge which employs the optical-lever principle is described in which frictional restraint of the moving parts is reduced to that of a knife edge alone, thus ensuring good repeatability of reading with probe pressures of less than 3g. The gauge covers the range 0–270 microns with an overall accuracy of ±0.5 micron.
DOI:10.1049/pi-b-2.1959.0212
出版商:IEE
年代:1959
数据来源: IET
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| 53. |
Automatic measurement of thickness as applied to germanium wafer production in transistor manufacture |
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Proceedings of the IEE - Part B: Electronic and Communication Engineering,
Volume 106,
Issue 17S,
1959,
Page 1171-1175
C.E.Bicknell,
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PDF (628KB)
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摘要:
The paper first examines the problems involved in the measurement of the thickness of germanium wafers, the difficulties encountered in handling and manoeuvring them due to their small size and weight and the nature of their material composition. Errors and failings in hand measurement are discussed, together with the advantages of mechanical measurement.The design and construction of an automatic measuring machine are then described, showing how the wafers are measured, sorted into seven different sizes and counted. The movement of them to the measuring point is by mechanical means, but they are measured, sorted and counted electronically. Measurement is effected by an electronic comparator of high magnification and accuracy, the output signal of which is amplified and then used to operate the sorting mechanism.Some half-million wafers were measured during the development period, which is described, together with the difficulties encountered and the modifications found necessary finally to produce the consistency and accuracy of measurement required.In conclusion, the assets of the machine in eliminating human error in hand measurement and operator fatigue, together with its production capacity, are described.
DOI:10.1049/pi-b-2.1959.0213
出版商:IEE
年代:1959
数据来源: IET
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| 54. |
An investigation of the alloying technique for the fabrication of germaniump–n–ptransistors |
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Proceedings of the IEE - Part B: Electronic and Communication Engineering,
Volume 106,
Issue 17S,
1959,
Page 1176-1181
R.E.Warren,
H.Yemm,
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PDF (1230KB)
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摘要:
The base width of a transistor is an important factor affecting the cut-off frequency, current gain and maximum collector voltage. The paper is concerned with the manner in which wafer thickness, size of indium dots, alloying temperature, flatness of junction, furnace atmosphere and junction area affect the limits that can be achieved in the alloying process.
DOI:10.1049/pi-b-2.1959.0214
出版商:IEE
年代:1959
数据来源: IET
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