摘要:

AbstractSeveral kinds of resist materials for microlithography have been developed in Japan. Poly(4‐vinyl phenol) sensitized with 3,3′‐diazidodiphenyl sulfone has been proved to be a high resolution negative deep UV resist with high sensitivity and good resistance to dry etching. The use of this resist enables a 1:1 projection printer to replicate fine patterns with 1 micrometer (μm) minimum feature size at the rate of 90 wafers per hour. Poly(methyl isopropenyl ketone) (PMIPK) has been investigated as a positive deep UV resist. Several resists composed of PMIPK with or without sensitizers are commercially available. Dry‐developable photo‐ and deep UV resists comprising PMIPK and aromatic bisazides have been developed. Poly(glycidyl methacrylate) having the sensitivity of 0.4 micro Coulomb (μC)/per square centimeter (cm2) is now being routinely used as a negative electron beam resist in the fabrication of chromium masks. Recently, aromatic polymers such as chloromethylated polystyrene, iodinated polystyrene, chloromethylated poly(α‐methylstyrene), poly(vinylnaphthalene) and its copolymers have been investigated as dry‐etching resistant elect

ISSN:0032-3888    

DOI:10.1002/pen.760231802

出版商:Society of Plastics Engineers, Inc.    

年代:1983

数据来源: WILEY

摘要:

AbstractWe have investigated the application of proximity printing to the copying of chrome masks used for integrated circuit fabrication. The mask blanks were coated with various positive and negative photoresists. When plotting the difference in width between etched lines on the print and the corresponding feature on the mask as a function of the separation, one observes fluctuations due to the movement of the diffraction peaks in the optical image. For the negative resist, the averaged difference in width is approximately constant to separations of 25 micrometer (μm), while for positive resists it changes monotonically with increasing gap spacing. The measured results are compared with calculations using a model of the resist exposure and development and good agreement is obtained. On the basis of these results we conclude that proximity printing would be difficult to apply to mask replication, but that it has considerable promise for replicating 10X step‐and‐repeat reti

ISSN:0032-3888    

DOI:10.1002/pen.760231803

出版商:Society of Plastics Engineers, Inc.    

年代:1983

数据来源: WILEY

摘要:

AbstractA dry developable negative working resist composition comprised of poly(methyl isopropenyl ketone) (PMIPK) and 4‐methyl‐2,6‐di(4′‐azido‐benzylidene) cyclohexanone‐1 was examined. The main photochemical product formed in the resist pattern was found to be a secondary amine which crosslinks PMIPK. Post‐annealing forms a hydrogen‐bonded product which shows a powerful electronic excitation energy quenching effect. The quencher is more powerful than the aromatic compound arising from the azide by post‐annealing only. The residual resist thickness of the negative pattern is about 80 percent of the initial thickness of the coating in spite of all the azide compound remaining in the resist coating. The obtained dry developed resist pattern has a high dry etch resistance. Etchings of Si and SiO2were performed by plasma and reactive ion et

ISSN:0032-3888    

DOI:10.1002/pen.760231804

出版商:Society of Plastics Engineers, Inc.    

年代:1983

数据来源: WILEY

摘要:

AbstractA mechanistic hypothesis is presented which explains the radiation chemistry of poly(methyl α‐haloacrylate)s. In order to test the hypothesis poly(methyl α‐trifluoromethylacrylate) PMTFMA was synthesized together with copolymers of methyl methacrylate (MMA), and the α‐trifluoromethyl analog. The mechanistic hypothesis predicts that PMTFMA should have a higherGscission than PMMA and that it should have no crosslinking propensity. This prediction was verified by experiment. Imaging of PMTFMA as a positivee‐beam resist is also presented. The new material is a more sensitive resist

ISSN:0032-3888    

DOI:10.1002/pen.760231805

出版商:Society of Plastics Engineers, Inc.    

年代:1983

数据来源: WILEY

摘要:

AbstractThe design, synthesis, formulation, and process optimization of a new mid‐UV resist are described. The synthesis of a spectrally matched sensitizer was guided by semiempirical quantum mechanical calculations that predict the effect of structural changes on optical absorption characteristics. The formulation was guided by computer profile simulation studies and the process development by a response surface analytical procedure. These techniques allowed formulation optimization to be achieved on the basis of an understanding of the complex interactions between the resist dissolution response functions and the modulation transfer function of the exposure tool for which the resist was designe

ISSN:0032-3888    

DOI:10.1002/pen.760231806

出版商:Society of Plastics Engineers, Inc.    

年代:1983

数据来源: WILEY

摘要:

AbstractA new resist system is described which undergoes spontaneous relief image formation. The resist is formulated from end capped poly(phthaladehyde), PPA, and a cationic photoinitiator such as a diaryliodonium or triarylsulfonium metal halide. The extreme sensitivity of the resist is the result of designing for chemical amplification. The desired amplification results from the fact that photolysis of the sensitizer generates acid which catalyzes main chain cleavage of the polyaldehyde. The uncapped polymer is thermodynamically unstable with respect to reversion to monomer at room temperature so a single acid catalyzed scission results in complete depolymerization to volatile monomer. A single radiochemical event is thereby amplified in the sense that it produces an enormous number of subsequent chemical transformations. PPA/onium salt resist films are so sensitive that exposure to low doses ofe‐beam, X‐ray or ultraviolet radiation results in complete self development without post‐exposure processing of any kind. The exposed area simply vapo

ISSN:0032-3888    

DOI:10.1002/pen.760231807

出版商:Society of Plastics Engineers, Inc.    

年代:1983

数据来源: WILEY

摘要:

AbstractVarious excimer laser wavelengths have been used, both in mid‐ and deep‐UV regions—308 nanometers (nm) from XeCl, 249 nm from KrF and 222 nm from KrCl–to delineate images in a number of resists. The quality of the images obtained with the laser exposures, the absence of speckle, and the insignificant loss of resist reciprocity make excimer laser lithography an attractive technique. The ultrafast exposures possible with this method significantly lessen the sensitivity requirements on deep UV resists, making the choice of the resist more f

ISSN:0032-3888    

DOI:10.1002/pen.760231808

出版商:Society of Plastics Engineers, Inc.    

年代:1983

数据来源: WILEY

摘要:

AbstractSeveral 3‐ketocoumarins with alkoxy or dialkylamino substituents in the 7 position, which are efficient sensitizers for crosslinkable polymers, were evaluated as photoinitiators. Proper combinations of certain derivatives of these ketocoumarins with activators such as amines, acetic acid derivatives, and alkoxypyridinium salts gave quantum yields for initiated radical polymerization much higher than that obtained from the Michler's ketone/benzophenone combinations. For each class of activators the dependence of the efficiency of polymerization on the redox properties of the ketocoumarins is explained in terms of charge transfer or electron transfer from the activator to the excited ketocoumarin (acetic acid and amine activators, respectively) or electron transfer in the opposite direction (pyridinium salt activators

ISSN:0032-3888    

DOI:10.1002/pen.760231809

出版商:Society of Plastics Engineers, Inc.    

年代:1983

数据来源: WILEY

摘要:

AbstractDeep UV[200 to 300 nanometers (nm)] photolithography has received much recent attention because it promises higher resolution than conventional exposure technology. Except for the change in wavelength from the 400 nm region, the exposure technology would remain virtually unchanged. We will discuss resist materials and processes explored in the last few years for optimization of deep UV lithography. Particular emphasis is placed upon the chemistry of resist design, multilevel processing schemes, and new sources for deep UV exposure.

ISSN:0032-3888    

DOI:10.1002/pen.760231810

出版商:Society of Plastics Engineers, Inc.    

年代:1983

数据来源: WILEY

摘要:

AbstractUV spectroscopy, gel permeation chromatography (GPC) and liquid chromatography (LC) have been used to analyze process factors that influence the properties of PDXR‐2 plasma developed X‐ray resist comprised of 92.5 wt percent poly(2,3‐dichloro‐1‐propyl acrylate) and 7.5 wt percentbis‐acryloxybutyltetramethyldisiloxane (BABTDS). The GPC‐LC method is particularly useful in optimizing fixing conditions, determining monomer concentration in the film, and studying molecular processes caused by absorbed X‐rays and thermal effects during fixing. Evidence for a synergistic sensitivity enhancement resulting from fixing and exposure is presented. Optimally processed O2reactive‐ion etch developed patterns exhibit a microgranular texture in both exposed and unexposed regions of<500 Å size. Unexposed region texture consists of SiO2resulting from the BABTDS monomer. It is completely removed by reactive ion etching with CHF3for short times at low power. The exposed area texture is not removed and affords an edge roughness per line edge of<500 Å. Resolution appears mask limited while granular size is dependent on exposure time. A 20 sec exposure optimizes resolution, pattern uniformity, and granularity. 0.5 μm line and space resolution can be obtained with the X‐ray machine and

ISSN:0032-3888    

DOI:10.1002/pen.760231811

出版商:Society of Plastics Engineers, Inc.    

年代:1983

数据来源: WILEY