ISSN:0032-3888    

DOI:10.1002/pen.760170602

出版商:Society of Plastics Engineers, Inc.    

年代:1977

数据来源: WILEY

摘要:

AbstractA novel photoresist material is described, consisting of a copolymer of 5‐hexene‐2‐one and SO2, which performs with or without the addition of sensitizers. This photoresist forms non‐tacky films that adhere well to silicon oxide without requiring thermal treatment. They also have useful sensitivity, can be developed to form highly‐resolved images, are inert to conventional etchants, and are readily removed after etching. The synthesis, characterization, and a possible mechanism for photodegradation are

ISSN:0032-3888    

DOI:10.1002/pen.760170603

出版商:Society of Plastics Engineers, Inc.    

年代:1977

数据来源: WILEY

摘要:

AbstractFor the purpose of obtaining a water‐soluble, reciprocity‐law‐failing photoresist, a study was made on the photo‐crosslinking properties of various systems composed of water‐soluble polymers and bisazides. Reciprocity‐law‐failing photoresists are suitable for use in the fabrication of black matrix color picture tubes without any alteration in the shadow mask. As a result, a system containing polyvinylpyrrolidone, polyacrylamide, and 4, 4′‐diazidostilbene‐2, 2′‐disulfonic acid disodium salt was found to show a significant reciprocity‐law‐failing property in the range of light intensity used practically in black matrix fabrication. The mechanism of the photo‐cresslinking reaction of this photoresist was investigated. It is suggested that the bisazide decomposes to liberate a reactive dinitrene intermediate. This photodecomposition was found to proceed reciprocally. The nitrene reacts with polymer molecules to form a water‐insoluble three dimensional network. If, however, oxygen is present, this crosslinking reaction is inhibited by a preferential reaction between dinitrene and oxygen. By this oxygen effect, this photoresist reveals significant reciproc

ISSN:0032-3888    

DOI:10.1002/pen.760170604

出版商:Society of Plastics Engineers, Inc.    

年代:1977

数据来源: WILEY

摘要:

AbstractWe have studied the effect of unsaturated‐polyester and epoxy hosts on the volume phase holographic recording properties of media using camphorquinone and 2, 3‐pentanedione as guests. The sensitivity, determined by holographic diffraction efficiency on exposure to an Ar+laser, was used as a probe for the chemical behavior of the medium. Intramolecular, photochemical reactions involving 2, 3‐pentanedione in the epoxy hosts are less effective than in the polyesters. For inter‐molecular reactions initiated by photoexcited camphorquinone, media having polyester hosts are again more sensitive. The availability in unsaturated‐polyester hosts of residual monomer for free‐radical addition reactions is a determining factor in the recordin

ISSN:0032-3888    

DOI:10.1002/pen.760170605

出版商:Society of Plastics Engineers, Inc.    

年代:1977

数据来源: WILEY

摘要:

AbstractThe photochemical reaction between poly(vinyl alcohol) (PVA) and chromate ion in aqueous solution has been studied by ultraviolet spectroscopy and electron paramagnetic resonance (EPR). The first step of the reaction appears to be formation of a PVA‐chromate ester. No further detectable chemical changes occur unless the ester is irradiated. Spectral sensitivity data indicate the reaction is initiated only by the chromate ester charge transfer absorptions at approximately 370 nm and 450 nm. EPR indicates an equilibrium concentration of Cr (V) during irradiation arid a decrease in concentration of Cr(V) following second order kinetics upon cessation of irradiation. The final reaction product is Cr (III) complexed with the hydroxyl groups of the PVA. The reaction rate is a function of pH between pH 12; however no detectable reaction occurred above pH 12. A mechanism is proposed for the PVA‐chromate photoreaction in solut

ISSN:0032-3888    

DOI:10.1002/pen.760170606

出版商:Society of Plastics Engineers, Inc.    

年代:1977

数据来源: WILEY

摘要:

AbstractPolyimides and Polyamide‐imides have a high thermal and dimensional stability, good properties, and resistance to attack by solvents. These features, along with their electrical properties, have led to their wide acceptance in the electronics industry. Specifically, Polyimide masks are superior to conventional resists during metal deposition, sputter etching, and chip soldering, for which high‐temperature stability is essential. Such a mask is prepared by selectively etching the polyamide‐imide with in organic solvent such as ethylenediamine. The reaction of ethylenediamine with polyamide‐imides has been applied successfully in metallizing semiconductors by the lift‐off method; also, polyamide‐imides have been used as a reworkable protective coating for semiconduc

ISSN:0032-3888    

DOI:10.1002/pen.760170607

出版商:Society of Plastics Engineers, Inc.    

年代:1977

数据来源: WILEY

摘要:

AbstractA new photoresist composed of cyclized cis‐1, 4‐polybutadiene has been developed. The resist has much higher sensitivity on exposure to ultraviolet light than the conventional resist from cyclized polyisoprene. This new resist has no resist‐flow even at 250°C, and provides high resolution on baking at 200°C. Thermogravimetric analysis showed that the cyclized polybutadiene decomposes at temperature higher than cyclized polyi

ISSN:0032-3888    

DOI:10.1002/pen.760170608

出版商:Society of Plastics Engineers, Inc.    

年代:1977

数据来源: WILEY

摘要:

AbstractIt is illustrated experimentally that swelling and deformation of narrow lines (width<1 μm) is an important limitation on the fidelity and transverse resolution of negative electron resists. The thickness response curve developed for negative resists is discussed and the effect of feature size is introduced through the experimental parameterD gR, the rigid gel dose, or the dose required to initiate a free standing line of width<0.2 μm. The transition from line to area exposure is discussed and the effect of substrate backscatter or transverse resolution in gratings is calculated. The observed resolution is 3‐5 times the calculated value from swelling and deformation during develo

ISSN:0032-3888    

DOI:10.1002/pen.760170609

出版商:Society of Plastics Engineers, Inc.    

年代:1977

数据来源: WILEY

摘要:

AbstractThe relative advantages and disadvantages of three different algorithms are compared for simulating the time evolution of two‐dimensional line‐edge profiles produced by a locally rate dependent surface etching phenomenon. Simulated profiles typical of optical projection printing and electron‐beam and X‐ray lithography of micron‐sized lines in resist and etching of ion‐implanted SiO2are used as a basis of comparison. One of the algorithms is a cell‐by‐cell removal model used earlier by Neureuther and Dill. One of the newly developed algorithms employs ray tracing; it can be shown that the path followed by a point on a front between the developed and undeveloped regions can be calculated using ray‐optic equations. The other new algorithm uses a string of points initially on the surface of the exposed resist. The points on the string advance perpendicular to the local direction of the string; with time the string of points moves down into the resist, replicating the action of a developer. We compare the computing cost, convenience, and accuracy

ISSN:0032-3888    

DOI:10.1002/pen.760170610

出版商:Society of Plastics Engineers, Inc.    

年代:1977

数据来源: WILEY

摘要:

AbstractThe advent of X‐ray lithography as a natural compliment to electron beam pattern generation and photolithography seems to be filling a need in the fabrication of submicron devices. The X‐ray technique, which is simple for single level devices, lags behind other lithographies in registration techniques. However, its proven high resolution capabilities is responsible for the increased interest in further development. At present a, variety of mask substrates are being evaluated with no one material exhibiting an overwhelming advantage. The type of substrate used is closely coupled to the permissable wavelength of the X‐ray source. The X‐rays used for lithography to date vary from Rh L (4Å) up to CK (44Å). Each wavelength shows a distinct advantage and disadvantage. For example, at short wavelengths substrates can be relatively massive but resists are less sensitive and high resolution masks have low contrasts. At longer wavelengths, resists are more sensitive and masks have higher contrast, but defects due to dust are more probable. The use of more than one X‐ray source could fulfill the requirements imposed by mask making and device fabrication. High throughput for both masks and device require both foster resists and higher intensity X

ISSN:0032-3888    

DOI:10.1002/pen.760170611

出版商:Society of Plastics Engineers, Inc.    

年代:1977

数据来源: WILEY