ISSN:0032-3888    

DOI:10.1002/pen.760291402

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractMany styrylpyridinium compounds (SPC), which are very stable in the dark, were prepared and evaluated as photobleachable dyes for contrast enhanced lithography (CEL). The photobleaching characteristics of water‐soluble contrast enhancing materials composed of SPC and water‐soluble polymer depend on the structure of the SPC and the kind of polymers used. The technique using SPC‐based CEL proved to be very effective for the resist pattern pro

ISSN:0032-3888    

DOI:10.1002/pen.760291403

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractA new contrast enhanced lithography (CEL) process using Chinese rosin as a binder is described. This binder is soluble in both non‐polar organic solvent and aqueous alkaline solution. Good coatability with organic solvent, no formation of mixing layer, and direct development without removing the CEL layer are the major advantages of this process. Among the three different kinds of photobleachable dyes, DZ‐2 (diazonium salt) has the best optical property and the resist profile is improved on g‐line reduction projection printing at the smallest dose. Moreover, this DZ‐2—Chinese rosin system is also effective at 365 nm, and the resist profile and the focus margin are improved on i‐line reduction projection printing by using

ISSN:0032-3888    

DOI:10.1002/pen.760291404

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractA negative resist based upon photo‐acid initiated cationic polymerization of an epoxy resin (1, 2) was reported in the early eighties with the advent of onium salts (3–5). An efficient acid generating onium salt, triphenylsulfonium hexafluoroantimonate (6), absorbs light in the deep UV producing acid upon direct photolysis in this region of the spectrum. The resin component of such a negative resist system must be optically transparent over the exposure wavelengths to obtain vertical image profiles. Another difficulty often encountered with crosslinking negative resists is swelling of the crosslinked matrix during development with organic solvents. This swelling manifests itself in distorted images and/or complete adhesion loss, especially when submicron features are involved. Our goal has been to address these problems and develop an organic developable deep UV resist capable of providing submicron images. Optically transparent commercial resins, styrene‐allyl alcohol copolymers, have been converted to glycidyl ethers, thereby providing cationically polymerizable functionalities. Careful choice of the resin was made to obtain reactive ion etch resistance, thermal stability, good adhesion, and coating properties. The synthetic procedure and characterization of the epoxy resin will be presented. The effect of the molecular weight distribution upon swelling during development and general solubility properties also will be discussed. Resist formulations exhibited sensitivities of 19 to 30 mJ/cm2on a Perkin Elmer 500 in the deep UV (UV2) mode. The electron beam sensitivity is 3 to 5 μC/cm2at 20 KeV. Submicron images have been generated in both optical and electron beam litho

ISSN:0032-3888    

DOI:10.1002/pen.760291405

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractThe dissolution rates of poly(methyl methacrylate) [PMMA] thin films on quartz substrates are studied by a combination of laser interferometry and fluorescence quenching methods. In this way one can monitor the penetration, rate of the solvent (2‐butanone, 2‐pentanone) into the film. When these films were prepared containing 2 to 8 percent Meldrum's diazo (1) as a dopant, the dopant acted as a mild retarder of film dissolution. Upon irradiation at 254 nm, 1 is converted to CO, N2+ acetone, and this process leads to a pronounced acceleration' of the PMMA film dissolution r

ISSN:0032-3888    

DOI:10.1002/pen.760291406

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractDissolution inhibition mechanisms of naphthoquinone diazides in novolak based positive photoresists were investigated from three different aspects:• Dipolar interaction.• Interfacial chemical reactions.• Chemical structures of naphthoquinone diazides.The results suggest that there exists a hydrogen bonding interaction between the compounds with the matrix novolak resin and that naphthoquinone diazides would crosslink the resin in contact with an alkaline developer, both of which contribute to dissolution inhibition mechanisms. However, there seems to exist another dissolution inhibition mechanism; namely, 1,2‐naphthoquinone diazide does not inhibit dissolution of the matrix novolak resin at all while a clear dissolution inhibition effect Is observed for its derivatives containing sulfonyl groups. In the present paper, three dissolution inhibition mechanisms of naphthoquinone diazides will be p

ISSN:0032-3888    

DOI:10.1002/pen.760291407

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractOptimization of the deep‐UV and electron‐beam lithographic properties of a copolymer of trimethylsilylmethyl methacrylate (SI) and chloromethylstyrene (CMS), P(SI‐CMS), within a weight average molecular weight range of 1.4 to 4.1 × 105and 90 to 93 mole percent SI composition has been achieved. The solubility behavior of P(SI‐CMS) resist was examined using the Hansen 3‐dimensional solubility parameter model and dissolution rate measurements. Swelling of the resist has been minimized through the identification of a single component developer (2‐propanol) and rinse (water) system. For the material containing 90 mole percent SI (14.9 weight percent Si) and M̄ω= 1.4 × 105, the sensitivity to 248 nm radiation is 65 mJ/cm2and to electron‐beam exposure is 3.4 μC/cm2at 20 kV. This material Is applicable to bilevel lithographic processes, and the O2reactive ion etching (RIE) rate is 16 times slower than standard hard‐baked photoresist. Using a He/O2(60/40) RIE pattern transfer process, 0.4 μm line/space patterns have been resolved in a 1.3 μm bilayer structure for deep‐UV exposures, and 0.25 μm imaging has been demonstrated in a 0.7 μm thick planarizing layer using electron beam irradiation. The loss in linewidth associated with the 0

ISSN:0032-3888    

DOI:10.1002/pen.760291408

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractThe chemistry that underlies positive imaging, Image Reversal (ImRe) and Built In Mask (BIM), has been investigated. For this purpose the photoactive compound 2, 1 ‐diazonaphthoquinone‐5‐(4‐cumylphenyl)‐sulfonate (PAC‐5), the corresponding indenecarboxylic acid (ICA‐5) and the decarboxylated derivative of ICA‐5 (indene), were isolated and characterized. The study revealed that dissolution of ICA‐5 in aqueous base developers gives rise to the formation of an indenyl carboxylate dianion, which decarboxylates in several hours. In the case that ICA‐5 is dissolved in weakly alkaline media or in organic solvents such as methanol, the formation of this ion does not occur, but the rate of decarboxylation is almost the same. It is suggested that the decarboxylation reaction proceeds via the indene carboxylate monoanion, which reacts to indenyl anion. The latter is a strong base and is readily protonated to give indene (two isomers). In the case of aqueous base this leads to precipitation of the indene. In agreement with the finding that the indene derived from ICA‐5 does not dissolve in aqueous base developers, it was found that mixing indenes into novolak has a considerable inhibitive effect on the dissolution rate of a layer of this material in aqueous base. After a bake (in ImRe this would be the reversal bake), the dissolution rate is almost the same as for unexposed photoresist. Similar experiments with mixtures of novolak and indenecarboxylic acid revealed that there is no difference in the dissolution rate of such layers as compared with exposed photoresist. This excludes the putative effect of porosity, caused by nitrogen extrusion. In the case that 1‐phenyl‐3‐morpholinotriazene is added to the photoresist (in order to produce a dye in the BIM concept), azo‐dyes are formed by coupling of diazonium ions on the 1‐ and 3‐position of 3‐indenecarboxylic acid. The paper starts with a brief review of the mechanisms of photolysis of 2, 1 ‐diazonaphthoqui nones, as have been proposed in the literature. Although the formation of ketene as an intermediate is generally accepted, there appears to be no con

ISSN:0032-3888    

DOI:10.1002/pen.760291409

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractPolyamic acids synthesized from di‐trifluoromethyl methane bis(phthalic anhydride) and 4,4'‐diaminophyenyl sulfone (F‐1) and 4,4'‐diaminophenyl ether (F‐4) were found to have excellent negative E‐beam resist properties. The best materials contain about 90 percent imidized structural units having sensitivities of 1.5 to 2.5 μC cm−2and contrast of 1.0 to 1.3. Polyamic acid of pyromellitic dianhydride and 4,4'‐diaminophenyl sulfone (P‐1) imidized to 97 percent exhibits useful positive E‐beam resist properties. Radiation induces imidization and chain scission to alter the solubility of the resist polymers resulting in the format

ISSN:0032-3888    

DOI:10.1002/pen.760291410

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractThe photochemistry of an appropriately substituted bisimide has been studied in solution by conventional means and time resolved laser techniques as a model for the behavior of inherently photosensitive solvent soluble polyimides, whose photochemistry are not well understood. A mechanism for the photochemical insolubilization of the polymer systems is suggested based on the results for the model system, which is confirmed by time resolved laser studies of polyimide solutions. Phosphorescence quenching rate constants for the model compound indicate that the triplet excited state is about one order of magnitude more reactive than triplet benzophenone, an increase most likely due to the inductive effect of the imide moieties.

ISSN:0032-3888    

DOI:10.1002/pen.760291411

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY