ISSN:0032-3888    

DOI:10.1002/pen.760140702

出版商:Society of Plastics Engineers, Inc.    

年代:1974

数据来源: WILEY

摘要:

AbstractClassical photochemistry is an ancient branch of chemistry, but in the past its practitioners have restricted their interest primarily to studies in the gas or liquid phases. However the practical applications of photochemistry in recent years have led to an increasing interest in photoreactions which occur in the solid phase, particularly in polymeric systems. One of the first areas of practical interest has been in stabilizing plastic and other polymeric systems against photodegradative reactions initiated by solar radiation. More recently photoreactions in polymers have been used extensively in recording and reproducing photographic and other images.

ISSN:0032-3888    

DOI:10.1002/pen.760140703

出版商:Society of Plastics Engineers, Inc.    

年代:1974

数据来源: WILEY

摘要:

AbstractThe resistance of various linear condensation polymers to acid or base hydrolysis is dependent upon the nature of the linkages in the polymer chain. Aryl polysulfonates having a styrylketone sensitizing group have been shown to be particularly resistant to attack by strong bases. Similar phosphorouscontaining polymers have been prepared and those with the arylphosphonate, thiophosphonate, and phosphate linkages have been found resistant to attack by such acids as ferric chloride. Using a solution polymerization method, these phosphorous polymers and also those containing the phosphite, phosphonite, and phosphorane linkages may readily be prepared. A comparison has been made of the resistance of these polymers and of the corresponding polycarbonates, polysulfonates, and polyesters to various bases and to ferric chloride solutions.

ISSN:0032-3888    

DOI:10.1002/pen.760140704

出版商:Society of Plastics Engineers, Inc.    

年代:1974

数据来源: WILEY

摘要:

AbstractThe spectral sensitivity of bisazide sensitized rubbers has been extended to 5000Å by the addition of p‐azidocinnamylidene derivatives of cyclohexanone. The photoresists were suitable for projection exposure at 4050 and 4350 Hg lines. The photospeed of the compositions is enhanced by increasing the unsaturation of the polymer component. Speed increase could also be obtained by exposure of the films at elevated temperatur

ISSN:0032-3888    

DOI:10.1002/pen.760140705

出版商:Society of Plastics Engineers, Inc.    

年代:1974

数据来源: WILEY

摘要:

AbstractPoly(methyl methacrylate) prepared under special circumstances exhibits a substantial increase in refractive index after irradiation with ultraviolet light. The essential step in the preparation is peroxidation of the monomer prior to polymerization. This increase in refractive index results from a photo‐induced polymerization of unreacted monomer (1‐2 percent) within the film which produces an increase in density (and hence refractive index) in the irradiated region. It is believed that peroxides, both polymeric and monomeric, act as photoinitiators. Sensitivity depends on the concentration of photoinitiator but the absolute value of Δndepends on the amount of unreacted mon

ISSN:0032-3888    

DOI:10.1002/pen.760140706

出版商:Society of Plastics Engineers, Inc.    

年代:1974

数据来源: WILEY

摘要:

AbstractVersatile computer programs capable of simulating near‐contact images from arbitrary objects and illumination were reported. Their capability was demonstrated in examples of combinations of different types of object and illumination. From the specific examples, we were able to derive certain general rules: (1) Polychromatic illumination is always better than monochromatic illumination. (Besides observing the examples given above, polychromatic illumination also helps when standing waves in photoresist are considered.) (2) Negative masks are easier to print than positive ones. Note that a negative mask in the sense of optical diffraction means smaller dimension for transparent parts of the mask. (3) Some well designed irregularities in the mask pattern improves the image. (4) The effective depth tolerance is between the limits set by the focussing effect and the image spreading effect. (5) Holographic mask should relax flatness and exposure toleranc

ISSN:0032-3888    

DOI:10.1002/pen.760140707

出版商:Society of Plastics Engineers, Inc.    

年代:1974

数据来源: WILEY

摘要:

AbstractThe formation of an image in a photoresist during photolithographic processing requires the exposure of the photoresist through a mask to a light source in the spectral region to which the photoresist is sensitive. The functional advantage of the flash exposure of photoresist is presented, which includes the elimination of oxygen effects, the reduction of diffraction and standing wave effects, and the enhancement of pattern‐edge acuity. The effects of both broad and narrow band sources are also shown with emphasis on proximity printing techniques. Finally, the optical, electrical and physical design parameters for a practical flash exposure system are discusse

ISSN:0032-3888    

DOI:10.1002/pen.760140708

出版商:Society of Plastics Engineers, Inc.    

年代:1974

数据来源: WILEY

ISSN:0032-3888    

DOI:10.1002/pen.760140709

出版商:Society of Plastics Engineers, Inc.    

年代:1974

数据来源: WILEY

摘要:

AbstractThis paper presents a review of electron‐sensitive resists evaluated for electron beam exposure. This includes positive as well as negative resists and their relative merits and drawbacks. The paper also presents general guidelines that can be used in evaluating any electron resist system for performance and usefulness in electron beam microfabricatio

ISSN:0032-3888    

DOI:10.1002/pen.760140710

出版商:Society of Plastics Engineers, Inc.    

年代:1974

数据来源: WILEY

摘要:

AbstractPoly(methyl isopropenyl ketone) (PMIPK) degrades upon exposure to 5 keV electrons. Using a scanning electron microscope to expose fine‐line raster patterns in thin films of this polymer and subsequently solvent‐developing the thus‐degraded regions, sharp walled troughs are observed, the width of which is a measure of the sensitivity to degradation. Copolymers with several vinyl monomers were prepared and the sensitivities of these were similarly determined. Information relevant to the mechanism of depolymerization was obtained by comparing homopolymers with copolymers and by the use of additives in the irradiated polymer films. Examples of potential device‐fabrication techniques using PMIPK resist ar

ISSN:0032-3888    

DOI:10.1002/pen.760140711

出版商:Society of Plastics Engineers, Inc.    

年代:1974

数据来源: WILEY