ISSN:0032-3888    

DOI:10.1002/pen.760291302

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractThis paper concerns a more in‐depth examination of the different components which make up positive photoresists based on the combined principles of chemical amplification and dissolution inhibition. Included is a discussion of the requirements for materials to be used as dissolution inhibitors in this scheme as well as an example of an optimum compound‐t‐butyl‐cholate. Also considered are the effects of onium salt counteranions on resist performance including gel permeation chromatographic (GPC) analyses of the changes in novolac molecular weight distribution which can occur during irradiation and p

ISSN:0032-3888    

DOI:10.1002/pen.760291303

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractThe unique ability of the tert‐butoxycarbonyl protecting group (t‐BOC) to be removed by a catalytic amount of strong acid has intensified the search towards new chemically amplified resist systems based on this chemistry. A series of new copolymers of t‐BOC‐styrene and sulfur dioxide have been prepared by free radical polymerization. These polysulfones function as chemical amplification positive resists for deep‐UV lithography when mixed with either 2,6‐dinitrobenzyl tosylate or triarylsulfonium salt acid precursors. The lithographic characteristics of 2:1 and 3:1 polysulfones have been evaluated. The new positive deep‐UV photoresists are aqueous base developed and are capable of 0.5 μm resolution. Even though the photoresists containing 2,6‐dinitrobenzyl tosylate are less sensitive than the onium salt formulations, they displayed greater contrast values. For example the poly(t‐BOC‐styrene sulfone) (2:1) 15 wt % tosylate resist formulation exhibits a sensitivity of 26 mJ/cm2a

ISSN:0032-3888    

DOI:10.1002/pen.760291304

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractA novel positive resist was prepared by sensitizing poly(p‐trimethylsilyloxystyrene) with p‐nitro‐benzyl‐9, 10‐diethoxyanthracene‐2‐sulfonate (NBAS) which was found to be a deep UV bleachable acid precursor. The silylated polymer is converted to alkaline soluble poly(p‐hydroxy‐styrene) in the presence of acid and a small amount of water. The photoresist gives high resolution positive patterns on imagewise exposure with deep UV light with a sensiti

ISSN:0032-3888    

DOI:10.1002/pen.760291305

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractA novel positive deep UV resist for KrF excimer laser lithography has been developed. The resist is composed of 1,7‐bis(4‐chlorosulfonyl phenyl)‐4‐diazo‐3,5‐heptanedione as the alkaline dissolution inhibitor and an alkali‐soluble sytrene polymer as the main‐polymer. 1,7‐bis(4‐chlorosulfonyl phenyl)‐4‐diazo‐3,5‐heptanedione has great capability of alkaline dissolution inhibition. High thermal stability and excellent photobleachability at 248 nm of the compound are also characterized. The alkali‐soluble styrene polymer has a high transmittance of 70% in 1.0 μm thickness at 248 nm. The novel positive resist had an excellent property for dissolution kinetics and photobleaching. We achieved high aspect ratio half‐micron pattern fabrication in 1.0

ISSN:0032-3888    

DOI:10.1002/pen.760291306

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractA new class of alkali‐developable positive excimer laser (KrF) resists is described. Novel α‐diazoacetoacetates derived from aliphatic polyfunctional alcohols were synthesized. These compounds undergo photolysis upon deep UV exposure to yield carboxylic acids, and exhibit excellent bleaching effects. Some of them, especially those having steroid skeletons, act as effective dissolution inhibitors. The composites prepared from these compounds and poly(p‐hydroxybenzylsilsesquioxane) were used as alkali‐developable positive deep UV resists, whose sensitivities depend on the number of photoactive groups in one photoactive molecule. Imaging results of KrF excimer laser projection printing are p

ISSN:0032-3888    

DOI:10.1002/pen.760291307

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractThe design and preparation of a series of negative resists for KrF excimer laser lithography are described. Each resist is composed of poly(hydroxystyrene) and an aromatic azide. The base resin shows high transmittance of 62%/μm at 248 nm, when p‐ethylphenyl p‐azidophenylsulfonate. 4‐azido‐4α‐methoxy‐chalcone, 1‐(4 azidobenzylidene)‐3‐(α‐hydroxy‐4‐azidobenzyl)‐indene, 4,4α‐diazido‐3,3α‐dimethoxybiphenyl, or 1‐(4‐azidostyryl)‐5, 5‐dimethyl‐2‐cyclohexen‐1‐one is employed as a sensitizer. These azides are obtained by red‐shifting the absorption maxima to lower energy regions than the exposing wavelength of 248 nm. Transmittance of resists can be controlled from 10 to 30%. The resist is exposed with a KrF excimer laser stepper and developed in an alkaline solution. Sensitivities of about 15 mJ/cm2are observed. A good, subhalf‐micron resist profile is achieved.The photochemical reaction mechanisms of poly(hydroxystyrene) and 4,4α‐diazido‐3,3α‐dimethoxybiphenyl were studied at 248 nm and 313 nm exposure. Quantum yield for photodecomposition at 248 nm is seven times larger than that at 313 nm, but dissolution‐inhibition effects are larger at 313 nm exposure. Conseque

ISSN:0032-3888    

DOI:10.1002/pen.760291308

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractThe application of X‐Ray lithography in mass production of devices is only economically viable if resist materials of highest sensitivity can be provided. Chemical amplification is the key concept to achieve such performance. It is outlined for a highly sensitive three component positive tone X‐Ray resist, consisting of a Novolak binder matrix, a starter compound, which—on X‐Ray exposure—yields an acid, which catalytically decomposes a dissolution inhibitor. Resist performance is discussed in terms of reaction kinetics and their implications on resist response, simulation, and handling p

ISSN:0032-3888    

DOI:10.1002/pen.760291309

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractPhysical bombardment plays a dominant role in the O2reactive ion etching (RIE) pattern transfer step in multilevel lithography. Etching rates are determined by the flux and energy distribution of the bombarding ions and energetic neutrals (charge transfer products), while anisotropy is determined by their directionality. Measurements of the sheath thickness and voltage drop may be used to estimate flux, energy distribution, average energy, and angular distribution of ions and the energetic neutral products of charge transfer collisions. The estimated flux of bombarding particles allows measured etching rates to be converted into yields. The trends for the etching rate as a function of pressure, bias voltage, and other system variables reflect a single fundamental trend for the yield as a function of bombardment energy. Etching rates of an organic novolac polymer are proportional to the energy flux from bombarding particles while the yield per bombarding particle is proportional to its energy. These kinetics are combined with angular distribution and interface evolution models to predict etching profiles in multilevel lithography.

ISSN:0032-3888    

DOI:10.1002/pen.760291310

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY

摘要:

AbstractThe photochemistry of poly(cyclohexylmethylsilane) (PCHMS) has been studied, and PCHMS homopolymer has been shown to be useful for high resolution, deep UV pattern generation either by using a commercial 1:1 projection printer operating in the deep UV or by an excimer laser stepper at 248 nm. In the case of the excimer laser stepper, images 0.5 μm and smaller have been printed, which represents an improvement over the 0.8 μm limit previously reported for polysilane copolymer

ISSN:0032-3888    

DOI:10.1002/pen.760291311

出版商:Society of Plastics Engineers    

年代:1989

数据来源: WILEY