摘要:

A fast high voltage switch based on ten transformer‐isolated power metal–oxide semiconductor field‐effect transistors in series is described. This circuit can switch 8 kV to ground with a fall time of ≊230 ns, and has proven to be useful for beam potential re‐referencing in pulsed ion beam experiments.

ISSN:0034-6748    

DOI:10.1063/1.1143294

出版商:AIP    

年代:1992

数据来源: AIP