摘要:

Barium magnesium fluoride (BaMgF4) has recently emerged as a strong candidate for application as the gate dielectric in ferroelectric random access memory (FERRAM) devices with nondestructive readout (NDRO). In earlier papers we reported the successful growth of oriented BaMgF4 films on Si(100) and other substrates in a ultrahigh vacuum (UHV) system, as well as the results of the structural and electrical characterization of these ferroelectric films. In the present paper, we review some of the earlier results, and also examine the effect of variations in the growth temperature and various post-growth anneals on the stoichiometry, crystallinity, orientation, and electrical characteristics of the BaMgF4 films. Initial attempts at integrating the ferroelectric field-effect transistor (FEMFET) with the standard CMOS VLSIC processing, as well as the effect of adding a thin capping layer of SiO2 on the BaMgF4 will also be described.

ISSN:1058-4587    

DOI:10.1080/10584589208215757

出版商:Taylor & Francis Group    

年代:1992

数据来源: Taylor

摘要:

A high-capacitance Pb (Zrx, Ti1-x)O3 (PZT)-on-Ta2O5 memory cell suitable for sub-micron processing is proposed, and an experimental capacitor of PZT (Zr/Ti= 52/48)-on-Ta2O5 with Ta electrode was prepared. The X-ray diffraction and XMA analysis of the sample showed that PZT reacted with neither Ta nor Ta2O5. The capacitor with 500 nm PZT thickness shows current density of 10-8 A/cm2 at 4MV/cm, the breakdown field of 8MV/cm, and the effective dielectric constant of 40.

ISSN:1058-4587    

DOI:10.1080/10584589208215758

出版商:Taylor & Francis Group    

年代:1992

数据来源: Taylor