摘要:

A variety of thin film LiNbO3processes and devices are reviewed in this paper. Integrated optical, electronic, electro-optical, and ferroelectric devices based on LiNbO3thin films have been built by different research groups and their properties have been characterized. The lowest propagation loss at 633 nm was 0.9dB/cm for LiNbO3on Al2O3and 1.9 dB/cm for LiNbO3on SiO2/Si waveguides. The highest electro-optic coefficient,r33, published so far is 10.7 × 10−12m/V for a LiNbO3thin film deposited on (110) Al2O3. The optical properties of an MFSFET with LiNbO3as the gate insulator have also been investigated. It has been shown that it is possible to shift the parameters of this transistor with exposure to incident light.

ISSN:1058-4587    

DOI:10.1080/10584589508019379

出版商:Taylor & Francis Group    

年代:1995

数据来源: Taylor

摘要:

Thin film waveguides of ferroelectric materials hold great promise for use in active integrated optics devices because of the high optical confinement possible in a thin film structure. KNbO3is an attractive material for active devices because it possesses large nonlinear optical susceptibilities and large electro-optic coefficients. KNbO3films with low optical losses are required to produce efficient devices. Epitaxial films of KNbO3(110) have previously been deposited on single crystal MgO (100) using ion beam sputtering techniques. However, these films contained microstructural defects due to the large lattice mismatch (>4.0%) between KNbO3and MgO which resulted in high optical losses. Recent work has focused on determining the relationships between microstructure and optical loss through the use of lattice matched substrates. Film composition, epitaxial quality and optical properties of KNbO3films deposited on MgO and MgAl2O4have been investigated and are compared.

ISSN:1058-4587    

DOI:10.1080/10584589508019380

出版商:Taylor & Francis Group    

年代:1995

数据来源: Taylor