摘要:

PZT, PLZT, LSC, and Pt thin film coatings have been deposited onto crystalline and amorphous substrates using the open atmosphere Combustion Chemical Vapor Deposition (CCVD(SM) technique. X-ray diffraction (XRD) scans have indicated a high degree of preferred orientation for all of these coatings. Furthermore, XRD pole figure analysis has shown that coatings deposited onto single crystal substrates are single phase, while depositions onto amorphous substrates yield coatings with a fiber axis. Entrapment of airborne particles into the flame caused enough film inhomogeneity that electrical measurements could not be performed at this stage.

ISSN:1058-4587    

DOI:10.1080/10584589508012258

出版商:Taylor & Francis Group    

年代:1995

数据来源: Taylor

摘要:

There are numerous ternary and quaternary oxides that are attractive for use in advanced IC's. These include Ba1-xSrxTiO3(BST), Pb1-xLax(Zr1-yTiy)1-x/4O3(PLZT) and SrBi2Ta2O9. Although each application has unique material requirements, in most cases the deposition process must have good conformality, composition control and throughput, while minimizing the thermal budget. For these reasons, metalorganic chemical vapor deposition (MOCVD) is acknowledged as the leading candidate for manufacturing. The absence of volatile (and in some cases stable) precursors has stimulated the use of the ‘‘liquid delivery technique'’ for transport of a system of precursors in liquid solution, which are vaporized simultaneously. Film composition is easily varied by mixing component solutions which contain one or more of the metalorganic compounds. The paper will focus on the role of measurement and control of film composition in the development of a manufacturing process for perovskites and related materials. Select results for BST and PZT thin films deposited using liquid delivery CVD will be discussed.

ISSN:1058-4587    

DOI:10.1080/10584589508012259

出版商:Taylor & Francis Group    

年代:1995

数据来源: Taylor

摘要:

(Pb,La)TiO3(PLT) and (Pb,La)(Zr,Ti)O3(PLZT) thin films were successfully grown by MOCVD, using (C2H5)3PbOCH2C(CH3)3, La(dpm)3, Zr(O-t-C4H9)4and Ti(O-t-C3H7)4as precursors. The PLT and PLZT thin films showed good dielectric and ferroelectric properties. PLZT films showed better fatigue properties than PZT films. Large area growth of PLZT thin films on a 6 inch silicon wafer was carried out and uniform PLZT films with a variation in film thickness of ±1.5% could be obtained. The case of La(i-C3H7C5H4)3as a new La precursor for growing PLT and PLZT will be discussed.

ISSN:1058-4587    

DOI:10.1080/10584589508012260

出版商:Taylor & Francis Group    

年代:1995

数据来源: Taylor

摘要:

Epitaxial SrRuO3thin films were deposited on SrTiO3(100) substrates by RF sputtering for use as bottom electrodes and epitaxial buffer layers. On these conductive substrates, epitaxial Pb(Zr0.35Ti0.65)O3(PZT) thin films were deposited by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD), transmission electron microscopy (TEM) and optical waveguiding were used to characterize the phase, refractive index, and film thickness of the deposited films. The epitaxial PZT films were c-axis oriented and contained -19.7% volume fraction of 90° domains. Ferroelectric hysteresis and dielectric measurements of epitaxial PZT ferroelectric capacitor structures formed using sputtered ITO top electrodes showed: a remanent polarization of 51.8 Ω/cm2, a coercive field of 54.9 kV/cm, a dielectric constant of 410, a bipolar resistivity of ∼5.8x109Ω-cm at a field of 275 kV/cm, and a breakdown strength of >400 kV/cm. The cyclic fatigue behavior of the films showed a strong dependence on the choice of electrode materials and the fatiguing wave form. These data support the model that the fatigue mechanism in these films arises from the trapping of injected charge carriers and is predominately an electronic phenomenon.

ISSN:1058-4587    

DOI:10.1080/10584589508012261

出版商:Taylor & Francis Group    

年代:1995

数据来源: Taylor

摘要:

The aim of this paper is to describe a relatively new thin film deposition technique called Liquid Source Misted Chemical Deposition (LSMCD) that has been successfully utilized to synthesize a variety of multicomponent oxide materials. This report provides an understanding of the basic principles of operation and the suitability, performance, capabilities and drawbacks for production applications using LSMCD.

ISSN:1058-4587    

DOI:10.1080/10584589508012262

出版商:Taylor & Francis Group    

年代:1995

数据来源: Taylor

摘要:

PZT(52/48) films are deposited by using an off-axis rf magnetron sputtering method on Pt/Ti/SiO2/Si(100) substrate. In order to decrease the microcracks which occurs on the surface of rf sputtered PZT films during postannealing at 600, 650 and 700°C, sol-gel derived 10% Pb excess Pb(Zr0.52Ti0.48)O3layers are placed at the top and bottom of the rf sputtered PZT films, respectively. SEM micrographs reveal a drastic reduction of microcracks on the surface of the buffered PZT films. In addition, enhancement of crystallinity is also observed according to XRD analysis. The P-E hysteresis measurements show an increase in remanent polarization (12.1; 22.45, 34.64 μ C/cm2) and a decrease of the coercive field (108, 72.9, 68.3 kV/cm) with the increase of post-annealing temperature.

ISSN:1058-4587    

DOI:10.1080/10584589508012263

出版商:Taylor & Francis Group    

年代:1995

数据来源: Taylor

摘要:

Microstructure, composition, and electrical properties were investigated for polycrystalline (Pb,La)TiO3(PLT) thin films deposited from the 10 and 20 mol% excess PbO targets. The compositional analysis by Rutherford backscattering pectroscopy shows that PLT films from 20 mol% excess PbO have almost stoichiometric composition and a dense structure. The dielectric constant and a dissipation factor of PLT films from 20 mol% excess PbO were 640 and 0.02 at 100 kHz, respectively. The conduction behavior of PLT films from 10 mol% excess PbO suggested a bulk-limited Poole-Frenkel emission in the high field region, while from 20 mol% excess PbO induced a electrode-limited Schottky emission.

ISSN:1058-4587    

DOI:10.1080/10584589508012264

出版商:Taylor & Francis Group    

年代:1995

数据来源: Taylor

摘要:

High crystallinity Ba0.5Sr0.5TiO3thin films were deposited on LaAlO3substrates by pulsed laser deposition. A conductive metallic oxide, SrRuO3, provided not only a good bottom electrode for Ba0.5Sr0.5TiO3but also an excellent seed layer for epitaxial growth of Ba0.5Sr0.5TiO3on it. The epitaxial nature of the Ba0.5Sr0.5TiO3thin films on the LaAlO3substrate was confirmed by x-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy. The quite good dielectric and electrical properties of crystalline Ba0.5Sr0.5TiO3thin films suggest that Ba0.5Sr0.5TiO3/SrRuO3is a good combination in terms of structural, electrical, and dielectric properties of Ba0.5Sr0.5TiO3thin films.

ISSN:1058-4587    

DOI:10.1080/10584589508012265

出版商:Taylor & Francis Group    

年代:1995

数据来源: Taylor

摘要:

The effect of oxygen pressure on the characteristics of BaTiO3thin films synthesized by pulsed-laser deposition technique was studied systematically in the present work. These films are highly textured in the (110) orientation and exhibit a low growth rate (∼66 nm/min) when deposited under low oxygen pressure (<3 Pa). The films are (111)-preferentially oriented and grow at a higher rate (∼104 nm/min) when synthesized under high oxygen pressure (∼100 Pa). The (110)-textured films possess slightly larger lattice parameters than the (111)-preferred-oriented films; that is, a0(110)=0.4042 nm and a0(111)=0.3992 nm, respectively. The characteristics of the (110)-textured films are accounted for by the alternation of O2--O2-and Ba2+-O2-layers within the (110) lattice planes.

ISSN:1058-4587    

DOI:10.1080/10584589508012266

出版商:Taylor & Francis Group    

年代:1995

数据来源: Taylor

摘要:

We report on growth and deposition process optimization of laser ablation-deposited Pb(Zr0.53Ti0.47)O3thin films for application in piezoelectric microdevices. Films were grown on three different substrates: (100) cut LaAlO3single crystals, Pt/Ti/SiO2/Si, and Pt/Ti/Si3+xN4/Si. On all three substrates, a deposition temperature of 620°C yielded perovskite films with good ferroelectric hysteresis properties. La0.5Sr0.5CoO3bottom and top electrodes were used for all films. PZT films on Pt/Ti/SiO2/Si showed a variation of texture with film thickness. Thin membranes of PZT on Si3+xN4were also fabricated.

ISSN:1058-4587    

DOI:10.1080/10584589508012267

出版商:Taylor & Francis Group    

年代:1995

数据来源: Taylor