摘要:

Consideration has been given to elastic and Coulomb interactions between the vacancy and self-interstitial associated in the Frenkel pair. A contribution to the interaction energy due to strain-induced polarization is also discussed. The model considered makes it possible to interpret experimental data on the rate of defect production.

ISSN:1042-0150    

DOI:10.1080/10420158908212986

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

We present a simple inverse method for finding travelling wave solutions of the one-dimensional reaction-diffusion (Fisher-Kolmogorv) equation for a restricted class of functions. We illustrate the method by some explicit, stable solutions in closed form.

ISSN:1042-0150    

DOI:10.1080/10420158908212987

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

The atomic displacements of Si in the Si(111) √3 × √3-B surface have been studied using high energy He+ion channeling at room temperature. The experimental results show large displacements parallel to the reconstructed surface, but smaller displacements perpendicular to the <110> axial direction. These results are compared with Monte-Carlo simulations.

ISSN:1042-0150    

DOI:10.1080/10420158908212988

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

The diffusivityD1of silicon self-interstitials plays an important role in the quantitative modeling of many technological processes for microelectronic and photovoltaic silicon devices. Examples are swirl-defect formation during crystal growth, oxygen precipitation, oxidation-enhanced diffusion, oxidation-induced stacking faults, gettering phenomena, and non-equilibrium effects associated with high-concentration phosphorus diffusion. This paper reviews the various attempts to measure or estimateD1, which in spite of all the effort remains a fairly elusive quantity partly because of interactions of self-interstitials with coexisting vacancies and sinks in the material.

ISSN:1042-0150    

DOI:10.1080/10420158908212989

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

Recombination instability (RI) in dislocated silicon crystals is briefly considered. Other most possible electron instabilities (EI) due to dislocation dangling bonds (DDB) are also mentioned.

ISSN:1042-0150    

DOI:10.1080/10420158908212990

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

We summarize our recent results in the effects of hydrogen on defects in germanium. Two types of hydrogen-related defect states were observed. Undoped germanium crystals which were irradiated with 1.0 MeV electrons and subsequently implanted with 27 keV hydrogen exhibited two dominant electron traps atEc–0.36 eV andEc–0.41 eV. A divacancy-like defect associated with the level atEc–0.41 eV becomes more stable when the defect captures hydrogen atoms.

ISSN:1042-0150    

DOI:10.1080/10420158908212991

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

Real-time electric field drift experiments,in-situcapacitance-voltage profiling, deep-level transient spectroscopy and nuclear reaction analysis have been used to monitor hydrogen motion and passivation processes in silicon. Spontaneous hydrogen injection and very fast migration has been detected in the near-surface region of various Schottky barriers andp-njunctions. The effective hydrogen diffusivity is about 10−8cm2/s at 400 K in agreement with the estimated value obtained by extrapolation from the high-temperature diffusivity data. The results of real-timein-situmeasurements clearly demonstrate that the fast diffusing protons are involved in the hydrogenation processes of both shallow and deep levels. The possible physicochemical mechanisms for the observed spontaneous hydrogen injection which results in unintentional hydrogenation of the subsurface of silicon, and probably other semiconductors, are discussed.

ISSN:1042-0150    

DOI:10.1080/10420158908212992

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

Results of the quantum-chemical simulation of the formation of structural and radiation defects are reviewed, using ice, silicon, and silicon dioxide as examples. The relationship between the structural elements of these crystals and the structural defects is analysed. Models of the main defects, their optical characteristics, and the activation energy of their migration are discussed. The relationship between the characteristics obtained by quantum-chemical calculations and the parameters of the macroscopic kinetics of the processes induced by defects in dielectric crystals is considered.

ISSN:1042-0150    

DOI:10.1080/10420158908212993

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

The experimental data for KCl—Ag, KBr, NaCl—Ag and KCl—SO4crystals as well as Na2O.3SiO2—Tb3+glass are summarized which demonstrate the delayed increase (decrease) of the intensity of the thermally stimulated tunnelling recombination of radiation defects after step-wise defrosting (frosting) of their mobility. Both theory and experiment presented here allow to distinguish the cases when the recombination kinetics is controlled by the rotation of an anisotropic defects or their diffusion respectively. It can be achieved studying the non-steady-state stages of kinetics. The effect of relative spatial defect distribution upon the kinetics under study is considered; it is argued that the {F,Vk} recombination in KBr occurs within spatially correlated pairs.

ISSN:1042-0150    

DOI:10.1080/10420158908212994

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

An estimate shows that the charged particle stopping power in the superconducting state might be different from that in normal state. The relative stopping power difference between the superconducting and normal states of polycrystalline YBa2Cu3O7was measured to be 0.06%±0.14%.

ISSN:1042-0150    

DOI:10.1080/10420158908212995

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor