摘要:

The stable configurations of hydrogen in undoped, and inn- andp-semiconductors are reviewed. We compare the experimentally determined configurations with theoretical predictions made by a variety of calculational methods. In undoped Si, as an example, hydrogen appears to occupy a energy occurring at a tetrahedral interstitial (T) site. In B-doped,p-type Si, hydrogen at a near BC site accounts for acceptor passivation. By contrast inn-type Si, hydrogen at the antibonding (AB) position appears to be responsible for donor passivation. The possible configurations in other semiconductors (Ge, GaAs and AlGaAs) are also summarized.

ISSN:1042-0150    

DOI:10.1080/10420158908213006

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

The nature of the irradiation induced defects in germanium single crystal doped with tellurium was studied by DLTS and electrical measurements.

ISSN:1042-0150    

DOI:10.1080/10420158908213007

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

The deviations of radiation damage (in the case of metals usually monitored by the residual electrical resistivity) from proportionality to the irradiation dose have so far been analysed almost exclusively in terms of extensions of models originally developed for small doses. The present theory considers the opposite limit, i. e. the quasi-saturated state. It is argued that at high doses the Lück-Sizmann effect may result in a self-organization of clusters of vacancies and self-intersititials, forming a heterogeneous froth. Possible structures of this froth and its effect on the electrical resistivity of metals are discussed. The model is shown to account for the dependence of the “saturation resistivity” on the nature of the irradiation as well as for several other hitherto poorly explained observations. Among them are the electrical-resistivity variation induced by high-dose irradiation with heavy ions, the amorphization of certain alloys by high-dose electron irradiation, and the occurrence of ordered arrays of stacking-fault tetrahedra afterin-situirradiations in high-voltage electron microscopes.

ISSN:1042-0150    

DOI:10.1080/10420158908213008

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

Based upon the results of studying the SiH IR bands in the float zone silicon crystal grown in hydrogen atmosphere (FZ-Si:H) some information about the H-defect-impurity complexes in the as-grown FZ-Si:H are summarized and presented.

ISSN:1042-0150    

DOI:10.1080/10420158908213009

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

The dose dependence and annealing behavior of the 1831 cm−1SiH band in NTD c-Si containing H have been studied via FTIR. The annealing kinetics has been found to be of first order with the activation energy equal to 1.45+−0.1 eV. The possible models for this SiH band have been discussed.

ISSN:1042-0150    

DOI:10.1080/10420158908213010

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

Thanks to developments in information science, data on scientific publications can easily be retrieved from specialized computer systems. Not just topical information can be obtained, but also information on selected authors. Moreover, some computer systems offer software which allows simple statistical analysis of the data by just a single command. When we apply this to Jim Corbett's scientific production, a clear picture of his versatility emerges.

ISSN:1042-0150    

DOI:10.1080/10420158908213011

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

We review the effect of disorder on Deep Level Transient Spectroscopy (DLTS) and Paired Temperature Spectroscopy (PATS) signals. We highlight errors made on using standard DLTS and PATS expressions in cases where disorder is present. We present a novel analysis of the DLTS peak heights for a metastable species in the presence of disorder.

ISSN:1042-0150    

DOI:10.1080/10420158908213012

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

We have employed the molecular model introduced first by Jaswal to compute the vibrational spectra of oxygen bearing defects in a silicon crystal. This was done in the context of a silicon molecular cluster with outer valencies terminated by hydrogen. We employ the MINDO/3 semi-empirical electronic structure method to compute the total energy of the molecular cluster. We examine the conditions in applications of the molecular model required for accurate predictions of oxygen local-mode vibrational frequencies. We find that the oxygen atom and its nearest neighbor silicon atoms must be allowed to vibrate. The nearest-neighbor and next nearest-neighbor shells of silicon atoms must be allowed to relax from their lattice positions. The outermost relaxed shell of silicon atoms should be bonded to silicon atoms in their lattice positions. We apply the molecular model to three defects of crystalline silicon; interstitial oxygen, oxygen in a vacancy (the A-center), and two oxygen atoms in a vacancy. Comparison of our computed local-mode oxygen vibration frequencies with experiment shows the computed oxygen local-mode frequencies to be almost uniformly 10% greater than those observed. Isotope shifts fit experiment equally well. We conclude that the molecular model represents an accurate and efficient approach for the computation of defect local mode vibrational frequencies for oxygen and other defects in crystalline silicon.

ISSN:1042-0150    

DOI:10.1080/10420158908213013

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

The reorientation or motion of a defect in a solid can, in favorable cases, be studied by uniaxial stress techniques. The defect is aligned with an applied uniaxial stress at temperatures sufficiently high for the defect to move and then probed with a measurement technique that is sensitive to the defect's orientation. The dynamical properties can be determined by quenching in the alignment and removing the external stress; annealing studies of the disappearance of the stress induced alignment then give a measure of the kinetics of defect motion. Such studies were pioneered by Corbett and Watkins for semiconductor defects and have been performed for a number of centers to provide information about symmetry, diffusion, defect interactions, and internal dynamics. Here, two such studies, the reorientation and diffusion of oxygen in silicon and the motion of hydrogen in hydrogen-containing complexes are described.

ISSN:1042-0150    

DOI:10.1080/10420158908213014

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor

摘要:

Hydrostatic pressure has been used as a variable to investigate the Ec-0.164 eV acceptor level for the oxygen-vacancy (O—V) defect in γ-ray irradiated Si, and the annealing/formation of oxygen-related defects in neutron-irradiated Si. The acceptor level is found by deep level transient spectroscopy to move closer to the conduction band and away from the valence band at rates of 3.9 meV/kbar and 2.4 meV/kbar, respectively, i.e., the level moves higher in the gap. There is also a relatively large inward (outward) breathing mode lattice relaxation (4.6±1.2 Å3/electron) accompanying electron emission (capture) from this level. Both results reflect the antibonding nature of the level and are qualitatively consistent with the Watkins—Corbett model for the O—V defect. The annealing rate was found by infrared absorption to increase with pressure for the O—V defect at 350°C with a derived activation volume of −4.5 Å3/defect, where the negative sign implies inward relaxation (contraction) on annealing. Pressure has relatively little effect on annealing of the C—Si—O C(3) defect which is interstitial in nature, but strongly favors the formation of the dioxygen (2 oxygen atoms per vacancy, i.e., O2—V) defect. The intensity of the O2—V band after annealing at 20 kbar is 5 times higher than that following similar annealing at 0 kbar. Additionally, this intensity at 20 kbar is higher than that achievable by any isochronal or isothermal annealing steps at 0 kbar. These annealing/formation results are discussed qualitatively in terms of models for the various defects.

ISSN:1042-0150    

DOI:10.1080/10420158908213015

出版商:Taylor & Francis Group    

年代:1989

数据来源: Taylor