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81. |
High dose implantation of Eu into α-Fe |
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Radiation Effects and Defects in Solids,
Volume 126,
Issue 1-4,
1993,
Page 395-398
B. Stahl,
O. Geiß,
R. Gellert,
M. Hartick,
G. Klingelhöfer,
H. Ladstätter,
P. Schwalbach,
E. Kankeleit,
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摘要:
At the UNILAC injector at GSI151Eu was implanted into an α-Fe foil [8]. According to our simulation code of the energy loss of the implanted ions an energy of 1.5 MeV was chosen to minimize the sputter yield during implantation and to produce the highest possible Eu concentration near the surface of the sample. After the irradiation with a dose of 3.6 · 1017Eu/cm2the implantation profile should reach its maximum of 8 at. % Eu at the surface of the sample and its width should be 1700 Å.
ISSN:1042-0150
DOI:10.1080/10420159308219749
出版商:Taylor & Francis Group
年代:1993
数据来源: Taylor
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82. |
Magnetic behaviour of isolated Fe and Ni ions measured directly after implantation into II-VI-semiconductors |
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Radiation Effects and Defects in Solids,
Volume 126,
Issue 1-4,
1993,
Page 399-402
H. Waldmann,
H.-E. Mahnke,
B. Spellmeyer,
G. Sulzer,
W.-D. Zeitz,
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摘要:
The local magnetic behaviours of isolated Fe and Ni impurities in the II-VI semiconductors ZnS and ZnTe have been studied directly after recoil implantation. From the measured magnetic properties, which are detected by the observation of the perturbed angular distribution, orbital contributions to the hyperfine field as well as contributions from spin magnetism are found to be present at both impurities. The interpretations on the basis of the intermediate ligand field model suggest that Fe and Ni ions are found to exist in 2+ and in 1+ states and that electronic excitations may play a significant role even microseconds after the implantation.
ISSN:1042-0150
DOI:10.1080/10420159308219750
出版商:Taylor & Francis Group
年代:1993
数据来源: Taylor
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83. |
Adhesion enhancement by GeV heavy ion irradiation |
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Radiation Effects and Defects in Solids,
Volume 126,
Issue 1-4,
1993,
Page 403-407
L. Wang,
Ch. Trautmann,
J. Vetter,
Z. Quan,
D. Cohen,
H. Fladry,
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PDF (224KB)
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ISSN:1042-0150
DOI:10.1080/10420159308219751
出版商:Taylor & Francis Group
年代:1993
数据来源: Taylor
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84. |
Stimulus-responsive track pores |
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Radiation Effects and Defects in Solids,
Volume 126,
Issue 1-4,
1993,
Page 409-412
Masaru Yoshida,
Masao Tamada,
Masaharu Asano,
Hideki Omichi,
Hitoshi Kubota,
Ryoichi Katakai,
Reimar Spohr,
Johann Vetter,
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PDF (563KB)
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摘要:
Ion track grafting enables the manufacture of chemically responsive track pores analogous to the discrete membrane channels found in biology. For this purpose etched ion tracks generated in CR-39 are surface-grafted by methacryloyl-L-alaninemethylester. In the future, the responsive track pores could be used to model the actively controlled channels in biomembranes and may lead to interesting technological applications.
ISSN:1042-0150
DOI:10.1080/10420159308219752
出版商:Taylor & Francis Group
年代:1993
数据来源: Taylor
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85. |
Editors' note |
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Radiation Effects and Defects in Solids,
Volume 126,
Issue 1-4,
1993,
Page -
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PDF (44KB)
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ISSN:1042-0150
DOI:10.1080/10420159308219668
出版商:Taylor & Francis Group
年代:1993
数据来源: Taylor
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