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1. |
Editorial |
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Radiation Effects and Defects in Solids,
Volume 140,
Issue 1,
1996,
Page 1-1
Heiner Ryssel,
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ISSN:1042-0150
DOI:10.1080/10420159608212935
出版商:Taylor & Francis Group
年代:1996
数据来源: Taylor
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2. |
Doping of Cn+(N = 1, 3, 5, 8) cluster ion tracks in polyimide |
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Radiation Effects and Defects in Solids,
Volume 140,
Issue 1,
1996,
Page 3-20
D. Fink,
R. Klett,
W.H. Chung,
R. Grünwald,
M. Döbeli,
F. Ames,
L.T. Chadderton,
J. Vacik,
V. Hnatowicz,
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摘要:
Cn+cluster ions (n = 1, 3, 5, and 8) are implanted at 1 MeV/carbon atom and at fluences of 1010to 1014cluster ions/cm2into thin polyimide foils. The ion-induced radiochemical changes are examined by infrared spectroscopy. The samples are then doped with either aqueous LiCl, or methylene blue dye solutions. The dopant uptake is determined by UV-Vis spectrometry in the first, and by NDP (neutron depth profiling) in the latter case. NDP examinations additionally give information about the depth distributions of the incorporated Li+ions.
ISSN:1042-0150
DOI:10.1080/10420159608212936
出版商:Taylor & Francis Group
年代:1996
数据来源: Taylor
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3. |
Nitrogen-rich carbon nitride film formation by means of ion beam and vapor deposition method |
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Radiation Effects and Defects in Solids,
Volume 140,
Issue 1,
1996,
Page 21-28
Fuminori Fujimoto,
Kiyoshi Ogata,
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摘要:
Carbon nitride films with 1 μm thickness were prepared on tungsten carbide (WC) and silicon wafers by Ion Beam and Vapor Deposition (IVD). Films with a composition ratio CR(C/N) = 0.5∼0.7 on WC prepared by nitrogen ions with energies lower than 800 eV showed a hardness of 6500 kgf/mm2which is comparable or greater than that of diamond. The structure of the films is amorphous. For the hardest films, it is considered that all nitrogen atoms are covalently bond to carbon atoms.
ISSN:1042-0150
DOI:10.1080/10420159608212937
出版商:Taylor & Francis Group
年代:1996
数据来源: Taylor
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4. |
Energy loss of fast protons in single collisions with noble gas atoms |
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Radiation Effects and Defects in Solids,
Volume 140,
Issue 1,
1996,
Page 29-36
C. Auth,
H. Winter,
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摘要:
We have measured energy loss spectra of 100 keV protons interacting with noble gas atoms in small angle scattering under single collision conditions. We obtain from our experiments with high angular and energy resolution the mean energy loss and the energy straggling as function of the angle of scattering range from 0.3 to 6 mrad.
ISSN:1042-0150
DOI:10.1080/10420159608212938
出版商:Taylor & Francis Group
年代:1996
数据来源: Taylor
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5. |
Computer simulation study of low energy boron channeling in silicon |
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Radiation Effects and Defects in Solids,
Volume 140,
Issue 1,
1996,
Page 37-47
K. Gärtner,
M. Nitschke,
D. Stock,
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摘要:
The channeling of B ions in (001) Si in the energy range of 0.2 keV to 5 keV is investigated by computer simulation using binary collision and molecular dynamics computer codes and different interatomic interaction potentials. The B channeling for energies below 1 keV is proved to be quite different from channeling at higher energies. In contrast to the situation at higher energies, the B profiles hardly depend on the angle of incidence. The reason for this behaviour is discussed by studying typical iron trajectories for different energies.
ISSN:1042-0150
DOI:10.1080/10420159608212939
出版商:Taylor & Francis Group
年代:1996
数据来源: Taylor
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6. |
Damage production and self-annealing during molecular implantation analyzed by RBS and ellipsometry |
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Radiation Effects and Defects in Solids,
Volume 140,
Issue 1,
1996,
Page 49-61
J. Gyulai,
T. Lohner,
M. Fried,
N.Q. Khanh,
GenQing Yang,
Z. Toth,
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摘要:
The role of thermal effects in primary damage production during ion implantation, i.e., a so-called micro-and macrotemperature, will be outlined. It is suggested that a strict control of thermal conditions around the cascade(s) can be a key factor in implantation technology, especially, when properties of layers implanted in different machines are compared. The role of hot implantation as an annealing concept will be demonstrated for the case of implantation with bi-molecular ions.
ISSN:1042-0150
DOI:10.1080/10420159608212940
出版商:Taylor & Francis Group
年代:1996
数据来源: Taylor
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7. |
Ion beam modification of PMMA – changes of the optical properties |
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Radiation Effects and Defects in Solids,
Volume 140,
Issue 1,
1996,
Page 63-74
J.P. Biersack,
A. Schmoldt,
D. Fink,
G. Schiwietz,
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摘要:
PMMA films of 60 μm thickness were bombarded by various ions at energies of 35–160 MeV. In this way, a nearly uniform ionization density could be achieved over the full width of the sample foil. Hence, the evaluation of the optical properties (refractive index and absorption) could be obtained unambiguously by standard optical techniques. With increasing deposition of ionization energy, an increase of the refractive index by a few percent could be observed. This increase can be interpreted as the consequence of splitting-off side chains; this causes a compaction of the material (increased density) and an increasing number of double bonds formed along the polymer skeletal chains.
ISSN:1042-0150
DOI:10.1080/10420159608212941
出版商:Taylor & Francis Group
年代:1996
数据来源: Taylor
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8. |
The electronic stopping power of channeled antiproton |
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Radiation Effects and Defects in Solids,
Volume 140,
Issue 1,
1996,
Page 75-85
S.T. Nakagawa,
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摘要:
We have evaluated the electronic stopping power, dE/dx, for channeled antiprotons which perform helical motion along an axis of Si(110) for an energy region from a few hundred keV to a few MeV. The conclusive factors to discuss the channeled fraction and dE/dxare two; the energyEand the ratio of incident tilt angle to ψL, where ψLis Lindhard's critical angle for channeling of a proton. The channeled fraction shows a maximum around /ψL≈ 0.6. At the same time, a prominent energy loss is found for channeled antiprotons by more than a factor of six as is compared with random ones. This implies the dE/dxfor channeled antiprotons would be even higher than that for random protons.
ISSN:1042-0150
DOI:10.1080/10420159608212942
出版商:Taylor & Francis Group
年代:1996
数据来源: Taylor
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9. |
Deep implants for semiconductor device applications |
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Radiation Effects and Defects in Solids,
Volume 140,
Issue 1,
1996,
Page 87-101
L. Frey,
S. Bogen,
M. Herden,
H. Ryssel,
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摘要:
Some applications of high energy implantation for semiconductor fabrication will be discussed. The applications include the reduction of latch-up in CMOS devices by retrograde wells, the enhancement of power devices by lifetime engineering using high energy implantation of helium or hydrogen, and the reduction of soft errors by buried recombination layers formed by high energy implantation of oxygen or carbon.
ISSN:1042-0150
DOI:10.1080/10420159608212943
出版商:Taylor & Francis Group
年代:1996
数据来源: Taylor
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10. |
A compact position-sensitive time-of-flight detector for high-energy elastic recoil detection analysis |
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Radiation Effects and Defects in Solids,
Volume 140,
Issue 1,
1996,
Page 103-109
P. Goppelt-Langer,
J.P. Biersack,
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PDF (372KB)
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摘要:
A new time-of-flight detector arrangement has been developed and optimised for elastic recoil detection analysis (ERDA). In contrast to other ERDA detectors, recoil masses are restricted to values below 40. Then incident ions in the mass range below 60 amu at energies of 0.5–1.0 MeV/amu are suitable which can be easily produced by tandem accelerators above 3 MV terminal voltage. The flight path necessary for mass separation can be reduced to below 20 cm and large solid angles become possible with large but still standard size surface barrier detectors. Sufficient position sensitivity is achieved by time-of-flight measurements over mm distances. The flight path is defined by two detectors, a pure timing detector and a surface barrier detector, tilted in opposite directions. The detection set-up consists of two channelplate detectors and a subsequent surface barrier detector (SBD), which finally stops the projectile (ion or recoil). Both timing detectors are of tilted foil type. Electrons emitted from a thin foil are accelerated towards a channelplate detector. The tilt angles of the foils are dependent on the flight-path and distance from the target. By choosing appropriate tilt angles, the path length differences over the foil area are minimised. The surface barrier detector at the end of the detector set-up is tilted in opposite direction of the foils in order to get the position from time-of-flight between the second foil and the SBD. SBDs with sensitive areas of 400–600 mm2are suitable and can be obtained commercially. With this set-up, solid angles of 5 msr and more become feasible; this increases detection probabilities (and count rates) over traditional designs.
ISSN:1042-0150
DOI:10.1080/10420159608212944
出版商:Taylor & Francis Group
年代:1996
数据来源: Taylor
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