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1. |
Stored energy in irradiated NaCi |
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Radiation Effects and Defects in Solids,
Volume 139,
Issue 1,
1996,
Page 1-19
H.W. Den Hartog,
J.C. Groote,
J.R. W. Weerkamp,
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摘要:
In this paper we describe the development of stored energy in pure and doped NaCl samples as well as natural rock salt during irradiation. The dependencies of the stored energy value on the irradiation temperature and the presence of dopants have been studied. Irradiation experiments at controlled temperatures between 50 and 150°C and doses up to 150 Grad have been carried out. For pure NaCl we have found that the damage is formed only in a relatively narrow range of irradiation temperatures. In almost all cases the effect of doping is that the stored energy value is larger and the temperature range where stored energy develops is wider as compared to pure NaCl.
ISSN:1042-0150
DOI:10.1080/10420159608212926
出版商:Taylor & Francis Group
年代:1996
数据来源: Taylor
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2. |
Critical angles and low-energy limits to ion channeling in silicon |
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Radiation Effects and Defects in Solids,
Volume 139,
Issue 1,
1996,
Page 21-85
G. Hobler,
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PDF (4065KB)
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摘要:
Channeling theory is reviewed and some improvements are presented. Several models for the calculation of critical approach distances, critical angles, and minimum energies for channeling are compared. While the influence of the choice of the interatomic potential is small, existing models of the critical approach distance yield rather different results particularly in the case of planar channeling. An improved model is proposed based on binary collision simulations. A low-energy limit to ion channeling along a given axis or plane is defined by equating the critical approach distance with the channel radius. Minimum energies for channeling and critical angles as a function of energy are presented for B, P, and As in Si along the major channels. In the case of B in Si from these data channeling maps are constructed and compared with channeling maps obtained from binary collision simulations. The predicted minimum energies for channeling are shown to agree well with a large number of experimental data obtained by SIMS, thermal wave, and backscattering yield measurements. Finally, the relevance of the critical angles and of calculated channeled fractions to ion implantation is discussed.
ISSN:1042-0150
DOI:10.1080/10420159608212927
出版商:Taylor & Francis Group
年代:1996
数据来源: Taylor
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