摘要:

X-ray photoelectron spectroscopy was used to examine a film of silicone evaporated onto a 13 mm diameter glass substrate. The material was dissolved into toluene, deposited onto the glass substrate, then the toluene was allowed to evaporate. Data were collected, stored and processed with a Hewlett-Packard model 5950B ESCA. Measured atomic percentages very closely matched the expected stoichiometry at three different electron take off angles, indicating homogeneity.

ISSN:1055-5269    

DOI:10.1116/1.1247643

出版商:American Vacuum Society    

年代:1992

数据来源: AIP

摘要:

Thin films of TiN were deposited from TiCl4, NH3, and H2in a lamp heated single wafer “warm wall” low pressure chemical vapor deposition reactor. The deposition was carried out on a TiSi2/Si sample. The thickness of the films is estimated to be 100 nm. The films were analyzed by x-ray diffraction, Rutherford backscattering spectroscopy, and x-ray photoelectron spectroscopy. The XPS data in Ti 2p, N 1s, TiL3M23V, and TiL3M23M23regions are presented.

ISSN:1055-5269    

DOI:10.1116/1.1247644

出版商:American Vacuum Society    

年代:1992

数据来源: AIP

摘要:

High resolution XPS measurements of the C 1s, including energy losses, and the valence band regions are presented for freshly cleaved highly oriented pyrolytic graphite. These spectra are useful for comparison to the diamond and C60forms of carbon.

ISSN:1055-5269    

DOI:10.1116/1.1247695

出版商:American Vacuum Society    

年代:1992

数据来源: AIP

摘要:

High resolution XPS measurements of the C 1s, including energy losses, and the valence band regions are presented for a high quality epitaxial film (average grain size ~70 nm) of C60on a Si (111) substrate. Similar films have also been characterized with x-ray diffraction and transmission electron microscopy.

ISSN:1055-5269    

DOI:10.1116/1.1247645

出版商:American Vacuum Society    

年代:1992

数据来源: AIP