摘要:

X-ray photoemission spectra from Si which has been physically etched by Ar ion sputtering are presented. The data include measurements of the valence band region, Si 2pregion, Si 2sregion, C 1sregion, and plasmon structure. These data are useful for comparison to pristine and oxidized silicon.

ISSN:1055-5269    

DOI:10.1116/1.1247739

出版商:American Vacuum Society    

年代:1993

数据来源: AIP

摘要:

The data presented correspond to theLMMandLMNAuger transitions of silver (some of theLMNtransitions involve valence electrons). Differences in screening are clearly seen by the large change in Auger parameter on going fromLMMtoLMN[see R. Landers, P. A. P. Nascente, S. G. C. de Castro, and G. G. Kleiman, J. Phys. Condens. Matter4, 5881 (1992); Surf. Sci.287, 802 (1993)]. Analysis of theLMMdata tends to indicate the absence of Coster–Kroning decay from theL2toL3initial states, butL1–L2,3cannot be ruled out [see G. G. Kleiman, R. Landers, and S. G. C. de Castro, J. Electron. Spectrosc. (to be published)]. The relatively poor resolution (2.5 eV FWHM for Au 4f) does not seem to have degraded the spectra appreciably since spectra of the more intenseL3M4,5M4,5line taken with higher resolution (1.5 eV FWHM Au 4f) did not show any additional features. The absolute energy accuracy is probably around ± 1 eV but is difficult to quantify for lack of accurate literature data.

ISSN:1055-5269    

DOI:10.1116/1.1247697

出版商:American Vacuum Society    

年代:1993

数据来源: AIP

摘要:

X-ray photoemission spectra of the core levels of passive films for an amorphous Al90Fe7Ce3alloy ribbon are presented. Passive films were induced by anodizing below the pitting potential in an aqueous 0.9 wt % NaCl solution for 60 min using potentiodynamic polarization techniques. Survey scan (with pass energy of 89.45) and medium resolution multiplexes (with pass energy of 35.75 eV) of the C 1s, O 1s, Na 1s, andKL1L2,3(Auger line), Al 2p, Cl 2s, 2p, andLM2,3M2,3(Auger line), Fe 2p, 3s, and 3p, and Ce 3dand 4pphotoelectron lines were collected on a Perkin-Elmer/Physical Electronics model # 5400 photoelectron spectrometer using monochromatized Al x rays. For comparison purposes, spectra of the native oxide film chemistry prior to anodization have been published previously [A. N. Mansour, S. J. Poon, Y. He, and G. J. Shiflet, Surf. Sci. Spectra2, 31 (1993)]. Analysis of XPS data for the potentiodynamically anodized surface reveals the following conclusions: (i) the Fe and Ce concentrations of the passive film region have increased significantly from those of the bulk indicating segregation of both Fe and Ce from the bulk of the alloy into the passive film region, (ii) the chemistry of Fe in the passive film is similar to that of Fe in Fe2O3or FeOOH, (iii) the chemistry of Ce in the passive film region is similar to that of Ce in Ce2O3, or Ce(OH)3, (iv) the chemistry of Al in the passive film is similar to that of an aluminum oxyhydroxide, namely AlOx(OH)y, (v) Cu is observed as a contaminant originating from the copper wheel used as part of the melt-spinning apparatus employed in manufacturing these alloys and is present in the passive region as Cu in Cu2O, and (vi) both Na and Cl were present in the passive film region indicating their incorporation in the passive film during the potentiodynamic polarization treatment.

ISSN:1055-5269    

DOI:10.1116/1.1247698

出版商:American Vacuum Society    

年代:1993

数据来源: AIP

摘要:

XPS spectra were recorded for the (111) cleavage surface of Si. For comparison, one surface was cleavedinsitu(Accession #00099) and a second was cleaved in air and exposed for 90 min before it was inserted into the vacuum chamber (Accession #00100). Si 2p, 2s, and valence band spectra are included.

ISSN:1055-5269    

DOI:10.1116/1.1247699

出版商:American Vacuum Society    

年代:1993

数据来源: AIP

摘要:

X-ray photoelectron spectra of GaAs(110) were recorded for a single crystal cleavedinsitu(Accession #00101). For comparison, spectra are included for a (110) surface cleavedexsituand exposed to air for 1 h (Accession #00102). The electronic record includes, for each surface preparation, the valence band region, the Ga and As 3dregions, the Ga and AsLMMregions, and the Ga 2pregion.

ISSN:1055-5269    

DOI:10.1116/1.1247700

出版商:American Vacuum Society    

年代:1993

数据来源: AIP

摘要:

XPS spectra were recorded for a CdTe single crystal cleavedinsituto expose the (110) surface (Accession #00103). For comparison, spectra were also recorded for a surface cleaved in air and exposed to air for 70 min (Accession #00104). The electronic record includes the 3dand 4dregions for Cd and Te. TheMNNAuger region and valence bands are also included.

ISSN:1055-5269    

DOI:10.1116/1.1247701

出版商:American Vacuum Society    

年代:1993

数据来源: AIP

摘要:

XPS spectra of the InSb(110) surface of a single crystal cleavedinsituwere recorded (Accession #00105). For comparison, spectra were acquired for the same surface exposed to air for 60 min (Accession #00106). The electronic record includes the 4d, 3d, andMNNregions for In and Sb, as well as the valence band region.

ISSN:1055-5269    

DOI:10.1116/1.1247702

出版商:American Vacuum Society    

年代:1993

数据来源: AIP

摘要:

XPS spectra were recorded for the InAs(110) surface. For comparison, data were acquired for a sample cleavedinsitu(Accession #00107) and for a sample exposed to air for 60 min (Accession #00108). The electronic record includes the In 4d, As 3d, In 3d, AsLNN, InMNN, and the valence band region.

ISSN:1055-5269    

DOI:10.1116/1.1247703

出版商:American Vacuum Society    

年代:1993

数据来源: AIP

摘要:

XPS spectra were acquired for highly ordered pyrolytic graphite, a single crystal diamond, and a C60film. Carbon 1sand valence band spectra are included in the electronic record.

ISSN:1055-5269    

DOI:10.1116/1.1247704

出版商:American Vacuum Society    

年代:1993

数据来源: AIP

摘要:

XPS spectra were recorded for the Ge(111) 2×1 cleavage surface of a single crystal. For comparison, spectra were taken for samples cleaved in air (Accession #00113) andinsitu(Accession #00112). The 2p, 3d,LMM, and valence band regions were measured.

ISSN:1055-5269    

DOI:10.1116/1.1247705

出版商:American Vacuum Society    

年代:1993

数据来源: AIP