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11. |
Sputtering of condensed noble gases by keV ions |
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Radiation Effects,
Volume 64,
Issue 1-4,
1982,
Page 81-81
R. Pedrys,
R.A. Haring,
A. Haring,
F.W. Saris,
A.E. De Vries,
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摘要:
Layers of Kr and Xe condensed at ∼ 15 K and 35 K have been bombarded by 3-6 keV Ar+, Kr+ and Xe+ ions.
ISSN:0033-7579
DOI:10.1080/00337578208222993
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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12. |
Ion sputtering of minerals and glasses: a first step to the simulation of solar wind erosion |
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Radiation Effects,
Volume 64,
Issue 1-4,
1982,
Page 83-88
K. Thiel,
U. Sassmannshausen,
H. Külzer,
W. Herr,
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摘要:
Selected rockforming minerals (plagioclase, augite, olivine, ilmenite, silicate and metal phases of the meteorite “Brenham”) as well as silicate and phosphate glasses were irradiated with heavy ions (4He+,14N+,20Ne+,40Ar+,56Fe+, Xe+nat) in the energy range of 50-130 keV in order to study ion-induced sputtering. Sputtering yields were measured independently by means of multiple beam interferometry and particle track autoradiography.
ISSN:0033-7579
DOI:10.1080/00337578208222994
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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13. |
Catastrophic sputtering of sulfur by helium |
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Radiation Effects,
Volume 64,
Issue 1-4,
1982,
Page 89-95
D. Fink,
J.P. Biersack,
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摘要:
The sputtering yield of sulfur by 30-300 keV4He+ at 20°C was found to be of the order of 104-106sulfur atoms per incident4He, dependent on the energy and total implanted fluence, and independent of the ion flux onto the target. This effect may be explained by a weakening of the van der Vaals binding between the S8rings due to Coulomb repulsion in the homogeneously charged volume, after a sufficient charge has accumulated in the highly insolating sample. Sulfur emission continues even for some time after the beam is switched off, and emission of sulfur atoms is also observed from non-irradiated areas adjacent to the irradiated spot, even from the rear side of 2-mm thick sulfur targets.
ISSN:0033-7579
DOI:10.1080/00337578208222995
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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14. |
Sodium halide sputtering by H+, He+, Ar+ions |
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Radiation Effects,
Volume 64,
Issue 1-4,
1982,
Page 97-97
J.P. Biersack,
E. Santner,
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摘要:
Sputtering experiments were performed with 70 to 300 keV H+, He+and Ar+ions impinging on KC1, KBr and Kl. The alkali halide samples are prepared as polycrystalline layers of about 2500 Å thickness, deposited on carbon-aluminium backings. During the ion bombardment the targets are kept at elevated temperatures between 50 and 300°C, in order to study the temperature dependence of sputtering. During the irradiation the removal of halogen and sodium is simultaneously observed by Rutherford backscattering.
ISSN:0033-7579
DOI:10.1080/00337578208222996
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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15. |
Modifications of sodium concentration profiles after electron and proton irradiation of glasses |
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Radiation Effects,
Volume 64,
Issue 1-4,
1982,
Page 99-102
G. Battaglin,
G. Della Mea,
G.De Marchi,
P. Mazzoldi,
O. Puglisi,
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摘要:
In this work we studied the effect of electron and proton irradiation on the depth distribution of sodium in commercial soda-lime glasses. Samples have been irradiated at different energies and fluences.
ISSN:0033-7579
DOI:10.1080/00337578208222997
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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16. |
Ion-beam depth-profiling studies of leached glasses |
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Radiation Effects,
Volume 64,
Issue 1-4,
1982,
Page 103-108
C.A. Houser,
I. S.T. Tsong,
W.B. White,
A.L. Wintenberg,
P.D. Miller,
C.D. Moak,
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摘要:
Ion-beam depth-profiling was carried out on three different glasses leached (or hydrated) in deionized water using1H(19F, αγ)16O nuclear reaction, secondary ion mass spectrometry (SIMS), and sputter-induced photon spectrometry (SIPS) techniques. The depth-profiles show an interdiffusion mechanism in which the sodium ions in the glass are depleted and replaced by hydrogen (H+) or hydronium (H3O+) ions from the solution. The leaching behavior does not show significant difference whether the glass surface is fractured or polished. Problems of mobile ion migration caused by ion bombardment and loss of hydrogen during analysis are discussed.
ISSN:0033-7579
DOI:10.1080/00337578208222998
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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17. |
Electron and ion beam effects in auger electron spectrometry |
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Radiation Effects,
Volume 64,
Issue 1-4,
1982,
Page 109-109
G. Pignatel,
G. Queirolo,
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摘要:
In Auger Electron Spectrometry relatively high primary electron current density is usually used in order to obtain a good signal-to-noise ratio. As a consequence, a number of phenomena occurs, which can substantially modify—or even destroy—the sample, and impair the results of the analysis.
ISSN:0033-7579
DOI:10.1080/00337578208222999
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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18. |
Sputtering of Al2O3and LiNbO3in the electronic stopping region |
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Radiation Effects,
Volume 64,
Issue 1-4,
1982,
Page 111-116
Yuanxun Qiu,
J.E. Griffith,
T.A. Tombrello,
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摘要:
Because of recent interest in the role played by the thermal properties of materials that exhibit high energy sputtering, we have sputtered Al2O3and LiNbO3with chlorine ions at energies between 3 MeV and 25 MeV. To detect the sputtered Al and Nb we employ thin carbon catcher foils, which are analyzed with Rutherford scattering in the forward direction. Al surface densities of 1014/cm2and Nb surface densities of 10l3/cm2are easily measured. The sputtering yields for both Al2O3and LiNbO3increase rapidly with increasing chlorine energy, and the Al and Nb yields are both approximately 0.2 at 20 MeV. Tests for dose, beam current, and contamination effects will be discussed.
ISSN:0033-7579
DOI:10.1080/00337578208223000
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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19. |
Ion implantation in insulators |
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Radiation Effects,
Volume 64,
Issue 1-4,
1982,
Page 117-117
P. Thevenard,
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摘要:
The modifications of insulating materials by ion implantation can be of considerable interest for many applications. If ion implantation has considerable potential for changing the properties of insulators, only a few experiments have determined the critical parameters which are important in the behaviour of the implanted layer. As a matter of fact, the ion implantation process is, by its very nature, a non-equilibrium process and, in addition, the injection of charged particles in a lattice determines a concomitant creation of intrinsic lattice defects. These defects are associated with the nuclear part of the energy loss of the particles and sometimes with the electronic one (halide compounds). The characterization of these intrinsic defects and the knowledge of their spatial distribution in the lattice are necessary because the formation or dissolution of phases precipitated in the implanted layer are strongly influenced by point or extended defects.
ISSN:0033-7579
DOI:10.1080/00337578208223001
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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20. |
Investigation of radiation induced aggregates by phonon techniques |
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Radiation Effects,
Volume 64,
Issue 1-4,
1982,
Page 119-123
J.M. Grimshaw,
M. Locatell1,
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ISSN:0033-7579
DOI:10.1080/00337578208223002
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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