摘要:

The diaelastic change of the torsional elastic modulus, : δG/G, of polycrystalline copper has been measured as a function of Frenkel pair concentration,c, during 3 MeV electron irradiation at 5 K. The result, (1/c)(δG/G) = −17 ± 3, is in good agreement with recently published single crystal values, and shows that the same interstitial defect is created in the lattice over the concentration range from about 10−7to 3 × 10−4Frenkel pairs.

ISSN:0033-7579    

DOI:10.1080/00337577608243035

出版商:Taylor & Francis Group    

年代:1976

数据来源: Taylor

摘要:

Damping and modulus measurements were made on high-purity, : olycrystalline copper during and following 1.0 MeV electron irradiations in the temperature range, 37–500°C. Above a critical temperature (225°C) the pinning ratedecreases.An analysis of the pinning rate data gave a value of 0.25 eV for the binding energy of a vacancy to a dislocation. An initial increase in the decrement, at the onset of irradiation, was observed at temperatures as high as 375°C.

ISSN:0033-7579    

DOI:10.1080/00337577608243036

出版商:Taylor & Francis Group    

年代:1976

数据来源: Taylor

摘要:

Damping and modulus measurements were made ± 0.04 on : igh purity copper following quenching from 700°C. An analysis of the annealing data yielded 0.54 ± 0.4 eV for the value of the migration energy minus the binding energy of a divacancy (Em2v-B2v). Following quenching from 700°C and during isothermal annealing near room temperature, we observe a monotonie decrease in the logarithmic decrement with a concurrent increase in the modulus. However, this same sample, when subjected to electron irradiation exhibits a pronounced “peaking effect” in the logarithmic decrement at the onset of irradiation. Depinning studies were carried out following both quenching and electron irradiation-the results were very similar for both types of experiments.

ISSN:0033-7579    

DOI:10.1080/00337577608243037

出版商:Taylor & Francis Group    

年代:1976

数据来源: Taylor

摘要:

Several internal friction peaks are observed on cold-worked f.c.c. : etals: the Bordoni peaks, interpreted by a dislocation-lattice interaction, and the Hasiguti peaks,P1,P2,P3, by a dislocation-point defect interaction. Measurements conducted on specimens previously plastically deformed and annealed in order to obtain a suitable network of dislocations, then irradiated with neutrons or electrons at low temperature, prove that Hasiguti peaksP1,P2, andP3of gold are caused by an interaction between dislocations and intrinsic mobile point defects. A theoretical model calculated from diffusion of point defects distributed at random on dislocations is also presented; with such a model for Hasiguti peaks our results can be interpreted as follows. During stage II of resistivity recovery clusters of self-interstititals grow on dislocations. At about 190 K, they become mobile and causeP2. During stage III, vacancies diffuse to dislocations and annihilate together with self-interstitials or causeP3. Some divacancies are also found on the dislocations; they causeP1.

ISSN:0033-7579    

DOI:10.1080/00337577608243038

出版商:Taylor & Francis Group    

年代:1976

数据来源: Taylor

摘要:

The recovery of electrical resistivity in dilute aluminum gold alloys has : een studied after neutron irradiation at 4.6° K. The annealing spectra of Al-Au alloys in stage I and II are similar to that of pure Al. From the dose curves it can be seen that the damage rate in the alloys is lower than that of pure aluminum. This can only be explained by the assumption that clustering production takes place during irradiation.

ISSN:0033-7579    

DOI:10.1080/00337577608243039

出版商:Taylor & Francis Group    

年代:1976

数据来源: Taylor

摘要:

A relation based on planar-channeling is formulated capable of : redicting the angular position of the maxima of the sputter yield curve for mono and polycrystalline materials under both low and high energy sputtering conditions.

ISSN:0033-7579    

DOI:10.1080/00337577608243040

出版商:Taylor & Francis Group    

年代:1976

数据来源: Taylor

摘要:

An infrared spectroscopy study has been made to determine the effects : f fast neutrons (E> 1 MeV) and annealing on the infrared absorption bands arising from lithium-boron (Li-B) pairing in silicon. The Li-B pair associated bands which appear in the wave-number range between 500 cm−1(20 Mm) to 750 cm−l(13.33 μm) have been observed in both low oxygen containing float zone refined Si (≲ 1017cm−3) and high oxygen containing crucible grown Si (≳ 1018cm−3). Direct evidence is presented which shows that the Li-B pairs must dissociate during irradiation and the lithium impurity atoms leave the boron atoms behind and are trapped by radiation induced primary defects, such as vacancies, divacancies, etc., forming new lithium associated infrared active defect complexes. Band tailing (near edge absorption) and the intensity of these radiation induced defect infrared absorption bands are strongly dependent on the neutron fluence as well as the initial concentration of Li-B pairs.

ISSN:0033-7579    

DOI:10.1080/00337577608243041

出版商:Taylor & Francis Group    

年代:1976

数据来源: Taylor

摘要:

Conditions of cone formation on the sputtered surface of single crystals : re examined. The effects of the various irradiation factors (dose, face orientation, ion beam incidence angle, etc.) on cone formation are studied. The cone formation on sputtered surfaces is primarily explained by crystal growth under the conditions of atom migration and target sputtering.

ISSN:0033-7579    

DOI:10.1080/00337577608243042

出版商:Taylor & Francis Group    

年代:1976

数据来源: Taylor

摘要:

Recently, the backscattering technique has become one of the most : seful tools to study impurity profiles in semiconductors.1In order to use this technique to study impurity profiles quantitatively, it is important to know not only the energy loss, but also the energy straggling of the backscattered probe ions in semiconductors.2Since silicon is industrially a most useful semiconductor and high energy helium ions the most used probe ions to get a high mass resolution, we have studied the helium in silicon system. There are some preliminary theoretical estimations of energy straggling3, but although there are experimental reports on the energy straggling of helium ions in metals,4the authors are not aware of any experimental reports on the energy straggling of helium ions in silicon.

ISSN:0033-7579    

DOI:10.1080/00337577608243043

出版商:Taylor & Francis Group    

年代:1976

数据来源: Taylor

摘要:

A comment by Dworschak and Wollenberger1on “A Critique of : he Unsaturable Trap Model of Radiation Damage in Metals” by the present authors2prompts us to set forth to what extent Stage-II damage curves (electrical resistivity increase-vs.-irradiation dose3)canorcannothelp us to discriminate between the current models4–9of radiation damage in metals.

ISSN:0033-7579    

DOI:10.1080/00337577608243044

出版商:Taylor & Francis Group    

年代:1976

数据来源: Taylor