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| 11. |
Generation centre distribution in boron-implanted silicon p-n junctions |
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Radiation Effects,
Volume 22,
Issue 3,
1974,
Page 209-210
V.V. Yudin,
V.I. Kurinny,
Yu.S. Akimov,
A.P. Karatsyuba,
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PDF (110KB)
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ISSN:0033-7579
DOI:10.1080/10420157408230782
出版商:Taylor & Francis Group
年代:1974
数据来源: Taylor
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| 12. |
Range and stopping power effects obtained from high resolution rutherford backscattering analysis of implanted targets |
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Radiation Effects,
Volume 22,
Issue 3,
1974,
Page 211-213
J.S. Williams,
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PDF (234KB)
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摘要:
Ion implantation is now a well-established technique for fabricating semiconductor devices and recently has received increasing application in the fields of metallurgy1and materials science2as a unique means of changing to advantage the composition, and mechanical and chemical properties of a substrate surface. Before one can begin to explain the observed changes in the surface properties of the implanted materials it is essential that the ion range and collection characteristics be known. Fundamentally, ion-range measurements are useful for comparison with theoretical ranges to check the validity of the long- accepted method of treating the energy loss of energetic ions in solids developed by Lindhard, Scharff and Schiø3(hereafter termed US).
ISSN:0033-7579
DOI:10.1080/10420157408230783
出版商:Taylor & Francis Group
年代:1974
数据来源: Taylor
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