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11. |
Bombardment of zinc sulphide single crystals with 30kev electrons: Light emission |
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Radiation Effects,
Volume 1,
Issue 1,
1969,
Page 61-64
P.M. Williams,
A.D. Yoffe,
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摘要:
Cathodoluminescence in hexagonal zinc sulphide single crystals has been investigated by irradiation of specimens at 100 °K with 30 keV electrons in a scanning electron microscope. The effects on the luminescence of stacking faults have been observed by simultaneously recording both the luminescence micrograph and the emission spectrum, and by subsequent examination of the same single crystals in a transmission electron microscope. With thicker crystals, opaque to the latter, an intense emission was observed from thin basal plane intergrowths, which was strongly dependent on the electron current density.
ISSN:0033-7579
DOI:10.1080/00337576908234460
出版商:Taylor & Francis Group
年代:1969
数据来源: Taylor
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12. |
Stage III recovery in electron-irradiated platinum |
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Radiation Effects,
Volume 1,
Issue 1,
1969,
Page 65-67
G. Duesing,
W. Schilling,
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PDF (249KB)
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摘要:
The dominant high temperature recovery peak in irradiated platinum is observed between 500 °K and 700 °K, dependent on dose. Pre-quenched irradiated platinum shows an additional peak at higher temperatures. Stage III in platinum is relabelled stage II.
ISSN:0033-7579
DOI:10.1080/00337576908234461
出版商:Taylor & Francis Group
年代:1969
数据来源: Taylor
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13. |
Specific volume dependence of the activation energy for annealing in neutron damaged silica glass |
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Radiation Effects,
Volume 1,
Issue 1,
1969,
Page 69-70
S. Lungu,
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PDF (150KB)
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ISSN:0033-7579
DOI:10.1080/00337576908234462
出版商:Taylor & Francis Group
年代:1969
数据来源: Taylor
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14. |
Substitutional doping during low-dose implantation of Bi and Ti ions in Si at 25°C |
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Radiation Effects,
Volume 1,
Issue 1,
1969,
Page 71-73
L. Eriksson,
G.R. Bellavance,
J.A. Davies,
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PDF (185KB)
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摘要:
High substitutional components have been observed in Bi and TI implants in silicon without any annealing treatment. Implant conditions were ∼1013ions/cm2at 40keV and 25 °C. The lattice location of the implanted atoms has been determined by means of the “channeling” technique.
ISSN:0033-7579
DOI:10.1080/00337576908234463
出版商:Taylor & Francis Group
年代:1969
数据来源: Taylor
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15. |
Reviews |
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Radiation Effects,
Volume 1,
Issue 1,
1969,
Page 75-76
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PDF (164KB)
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摘要:
Biological Effects of Radiations Daniel S. Grosch Blaisdell Publishing Co., New York, 1965, 293 pages. $3.50
ISSN:0033-7579
DOI:10.1080/00337576908234465
出版商:Taylor & Francis Group
年代:1969
数据来源: Taylor
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