摘要:

Boron-ions have been implanted into Silicon to formp-type planar resistors. The resistors have Boron-diffused contacts and the energetic ions were implanted through an approximately 0.2 micron thick thermally grown SiO2-film, on top of which a pattern was etched in an evaporated aluminum layer to define the areas to be implanted. The ion-doses were in the range 1012cm−2to 1015cm−2with ion-energies 120 keV and 200 keV. All implantations were performed at room temperature and the annealing took place for 15 min in a nitrogen ambient in the temperature range 300–950 °C. Among the results of the investigations are the obtainable range of sheet resistivities, the large-area-homogeneity and the temperature coefficient of resistance (TCR) as a function of the above mentioned parameters.

ISSN:0033-7579    

DOI:10.1080/00337577108232568

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

Lattice disorder for 200-keV Sb implantations into silicon has been studied by channeling effect analysis using 400 keV proton backscattering. Implantation and analysis were performed at low temperatures in the same system without warmup. In the temperature region between 85°K and room temperature the disorder production per incident ion at low doses is implantation temperature dependent. Approximately 18,000 silicon scattering centers per incident 200-keV Sb ion are observed for 90°K implantations, and this value is nearly a factor of three greater than at room temperature. Isochronal anneal curves of low fluence, low temperature implantations show, significant annealing below room temperature. The observed disorder production per incident ion decreases with increasing implantation temperature at temperatures 50 to 100°K lower than annealing occurs following 85 or 90°K implants. Strong similarities of the implantation temperature dependence and anneal behavior of the disorder exist for Sb and B implantations into silicon and suggest that much of the lattice disorder produced by ion implantation can be understood in terms of the basic properties of the silicon target material.

ISSN:0033-7579    

DOI:10.1080/00337577108232569

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

Ion bombardment of GaAs above fluences of the order of 2 × 1013400-keV Xe-ions/cm2produces a highly strained surface which is elevated several hundred Angstroms above the adjacent masked surface. The irradiated area etches rapidly to yield circular etch pits ∼ 0.3 μ in depth and 0.2 μ in diameter. At lower fluences, observations show much less expansion, slower crystalline etching, and some evidence of triangular etch pits and slip planes. These results are attributed to expansion in the implanted layer which results in high surface strain and the generation of dislocations to accommodate the mismatch of lattice parameters.

ISSN:0033-7579    

DOI:10.1080/00337577108232570

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

The damage produced in Si and Ge by 10–400 keV heavy-ion bombardment has been measured by using the channeling technique. By optimizing the experimental conditions, the depth distribution of the damage can be measured with a depth resolution of ∼ 10% in the range of 50–10000 Å. The present paper gives a short description of the method and the apparatus applied in these measurements. The results of the measurements may be summarized as follows:

ISSN:0033-7579    

DOI:10.1080/00337577108232571

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

Photoluminescence measurements at 77°K and Rutherford scattering of 450 keV protons were used to study radiation damage and annealing in ion implanted GaAs. The characteristic band edge luminescence (8225 Å) in GaAs is completely quenched by ion implantation. Photoluminescence measurements on samples which were isochronally annealed show a single annealing stage at 600°C. A luminescence peak at 9140 Å is introduced into the spectra of all implanted and annealed samples. This peak is attributed to an acceptor level created by As vacancies. The intensity of the peak is greatly reduced by protecting the surface of implanted layers with SiO2during annealing. Rutherford scattering measurements on isochronally annealed samples reveal two annealing stages. A 300°C annealing stage is observed on samples which have an initial aligned yield less than random while a 650°C stage is observed on samples which have an initial aligned yield equal to random.

ISSN:0033-7579    

DOI:10.1080/00337577108232572

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

Using the techniques of Rutherford scattering, electron microscopy and infra-red absorption, the damage produced by implantation of 100 to 400 keV boron (11B) ions in silicon single crystals, held at room and liquid nitrogen temperatures, has been examined, and the annealing behaviour investigated. The rapid annealing of disorder in the range between room temperature and 325°C, as observed by the Rutherford scattering of channelled analysing particle beams, correlates with a shrinkage of the 1. 8μ divacancy infra-red absorption band, and with a coarsening ofsomeof the defects observed in the electron microscope. Amorphous zones observed in samples implanted with 1015boron ions/sq. cm. at liquid nitrogen temperature do not anneal until temperatures in the vicinity of 450 °C are attained.

ISSN:0033-7579    

DOI:10.1080/00337577108232573

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337577108232574

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

The flux and fluence dependence of disorder produced in silicon during the implantation of11B has been investigated at room temperature, -50°C. and -120°C. Implantations were carried out with 200 keV11B ions using current densities in the range from 0.06μA/cm2to 15μA/cm2, and the disorder monitored by measuring the energy spectra of backscattered protons which were incident on the sample at 450 keV parallel to a (110) axis. Significant differences in the dependence of the disorder on11B flux and fluence were observed between the implantations performed at room temperature and those carried out at the two lower temperatures.

ISSN:0033-7579    

DOI:10.1080/00337577108232575

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor