摘要:

A simple equivalent circuit is presented which predicts the small-signal admittance-voltage characteristics of siliconp*njunction diodes under forward bias conditions. Deep levels are introduced into the diodes by irradiation with carbon ions or thermal neutrons, and the effects on these characteristics are discussed in terms ot” the equivalent circuit. The drastic changes observed in the C-V characteristic are attributed to enhanced carrier recombination resulting from the damage.

ISSN:0033-7579    

DOI:10.1080/00337577708233153

出版商:Taylor & Francis Group    

年代:1977

数据来源: Taylor

摘要:

The available data on the interatomic potential derived from ion-atom experiments is compared with two theoretical forms of the screened Coulomb interatomic potential. From these results a correction to the screening radius, involving a function of the atomic numbers of the collision partners, is derived. Application of this correction factor in computer simulation studies of ion-surface interaction should improve the accuracy of the ' simulations.

ISSN:0033-7579    

DOI:10.1080/00337577708233154

出版商:Taylor & Francis Group    

年代:1977

数据来源: Taylor

摘要:

Ion implantation of 40 keV, P+ions into pelycrystalline Ni foils has been used to produce amorphous Ni-P alloys. The foils were subsequently investigated by electron microscopy and electron diffraction. The diffraction measurements confirm the presence of an amorphous surface layer. The ion implanted alloy is compared to similar material produced by the more usual techniques of electro deposition and vapour quenching. After annealing, the implanted layer recrystallizes into a dense, small grained structure. Equivalent results have been obtained using Co and Fe as target materials. The data suggests that ion implantation should contribute to an understanding of the production and stability of amorphous metals.

ISSN:0033-7579    

DOI:10.1080/00337577708233155

出版商:Taylor & Francis Group    

年代:1977

数据来源: Taylor