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11. |
Critical channeling angles of low energy ions in silicon |
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Radiation Effects,
Volume 29,
Issue 2,
1976,
Page 117-119
H. Grahmann,
A. Feuerstein,
S. Kalbitzer,
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摘要:
Critical channeling angles of H, He, C and Ne ions in silicon single crystals have been measured in the energy range from 15–60 keV. The results well agree with theoretical critical channeling angles in the low energy regime following a dependence of ψ ∼E−¼.
ISSN:0033-7579
DOI:10.1080/00337577608233496
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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12. |
Linear approximation in classical scattering by a moliégre potential |
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Radiation Effects,
Volume 29,
Issue 2,
1976,
Page 121-123
F. Malaguti,
E. Verondini,
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PDF (167KB)
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摘要:
In the context of a Monte Carlo simulation of channeling, it is shown how the scattering angle of an ion by a Molière potential can be calculated by linear interpolation. In the case of impulse approximation, this reduces the computing time to ≃1/17 of that needed by the usual procedure.
ISSN:0033-7579
DOI:10.1080/00337577608233497
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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13. |
Negative muons as solid state probes |
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Radiation Effects,
Volume 29,
Issue 2,
1976,
Page 125-126
G.T. Condo,
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PDF (127KB)
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摘要:
It is shown that the use of negative muons as solid state probes is complicated by the de-excitation scheme of muonic atoms. A comparison with some recent radiation damage experiments suggest that the μ−atom (at least in silicon) is displaced to an interstitial position.
ISSN:0033-7579
DOI:10.1080/00337577608233498
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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14. |
Book reviews |
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Radiation Effects,
Volume 29,
Issue 2,
1976,
Page 127-128
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PDF (182KB)
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摘要:
INFRA-RED STUDIES OF CRYSTAL DEFECTS, by R. C. Newman. Taylor & Francis Ltd., London, 1973. 187pp. (£3.75)
ISSN:0033-7579
DOI:10.1080/00337577608233499
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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