摘要:

Measurements were made of the sputtering yield of polycrystalline niobium due to 15 kev argon ion bombardment. The crystallographic orientations of individual grains were carefully surveyed using selected area electron channeling patterns. It was demonstrated that the average yield behavior could be calculated from theory provided allowance was made for ion channeling. The method for calculating yields can be applied to any combination of ion-polycrystalline target material provided the distribution of grain orientations (texture) is known.

ISSN:0033-7579    

DOI:10.1080/00337578008210006

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337578008210007

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

Helium ions of about 100 keV energy were implanted into copper samples at room temperature. Implantation doses were between 3.7 × 1016and 6.3 s× 1016He/cm2. The helium distributions were analyzed in a thermal neutron beam as a function of annealing temperatures up to 800°C. Substantial reductions in the amount of trapped helium were observed above 600°C.

ISSN:0033-7579    

DOI:10.1080/00337578008210008

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

Metal-silicides are one of the most useful contact materials for the high speed Si LSI devices, since they have lower resistivities than the poly-Si electrodes. In fabrication of such LSI devices, the silicide electrodes are used as the self-aligned masks for localized ion implantation, because they are relatively stable up to the annealing tempera-tures of the implanted impurities. So, in order to recover the damages in thesilicide electrodes and to increase reliability of the electrodes, it is important to study annealing behavior of the radiation damages in the ion-implanted silicide films. The radiation damages in the silicides have been in-vestigated using epitaxial films grown on single crystalline Si.1–3It has been found that there is a pronounced difference on the damages between metal-rich silicides as Pd2Si and silicon-rich silicides as Nisi2. That is, it has been shown that Nisi, films become amorphous for higher doses than 3 × 1015Ar ions/cm2, while that Pd2Si films do not become amorphous but the amounts of damages saturate for higher doses than 1 × 10l5 Ar ions/cm2.1In this paper, we present the annealing behavior of the radiation damages in epitaxial Pd2Si and Nisi2films on Si by using the channeling technique.

ISSN:0033-7579    

DOI:10.1080/00337578008210009

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor