摘要:

The irradiation-induced displacement of B atoms from lattice sites in Si-0.2% B crystals has been measured by ion channeling. The results indicate that the displacement caused by 35 K irradiation with 0.7 MeV H+is due to trapping of Si interstitials by B atoms, while the displacement caused by subsequent annealing between 200 and 300 K is due to migration of B interstitials and/or B-vacancy pairs.

ISSN:0033-7579    

DOI:10.1080/01422448008218669

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

The role of non linear thermal diffusion on the spatial-temporal redistribution of temperature in ion bombardment induced energy spikes in solids is examined. It is shown that for physically reasonable non linearity little difference is observed between the linear and non linear cases of the thermal transport in the spike.

ISSN:0033-7579    

DOI:10.1080/01422448008218670

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

Ion implanted induced giant gettering of Gold in Silicon has been investigated by using ⟨111⟩ Si wafer implanted with 1016Ar+ions/cm2at 280 keV. Some conditions of the appearance of giant gettering of Au in Si have been establi shed at different temperatures i.e. 500°C and 900°C: (i) annealing in vacuum, (ii) an “infinite” source of Au from a preannealed Au-Si film deposited by sputtering. On the basis of the experimental results a simple thermodinamic model explaining the giant gettering involving the mechanism of a liquid Au-Si phase has been developed.

ISSN:0033-7579    

DOI:10.1080/01422448008218671

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

Photon emission from Ta metal bombarded with 55 keV Ar+is investigated under both ultra high vacuum and oxygen rich environments. It is shown that oxygen is necessary to produce broad band continuum emission and that Ta oxide molecules are most probably the origin of this emission.

ISSN:0033-7579    

DOI:10.1080/01422448008218672

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

Backscattering yields of 300 keV protons are measured under channeling (χch), blocking (χb1) and double alignment (χda) conditions on (111)-silicon cry-stals. It was established that the relation χchχb1= χdais fulfilled within an experimental error of 10% for clean surfaces as well as for vacuum deposited layers on the crystal surface.

ISSN:0033-7579    

DOI:10.1080/01422448008218673

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor