| 21. |
Proton ranges in silicon and in Si-SiO2double layers |
| |
Radiation Effects,
Volume 49,
Issue 1-3,
1980,
Page 113-117
J. Mittenbacher,
K. Gärtner,
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|
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ISSN:0033-7579
DOI:10.1080/00337578008243077
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
| 22. |
Erosion of frozen-gas films by MeV ions |
| |
Radiation Effects,
Volume 49,
Issue 1-3,
1980,
Page 119-123
J. Bφttiger,
J.A. Davies,
J. L'ecuyer,
N. Matsunami,
R. Ollerhead,
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|
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ISSN:0033-7579
DOI:10.1080/00337578008243078
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
| 23. |
Sputtering limitations for high-dose implantations |
| |
Radiation Effects,
Volume 49,
Issue 1-3,
1980,
Page 125-126
J.K. Hirvonen,
J.M. Poate,
Z.L. Liau,
J.W. Mayer,
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|
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|
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ISSN:0033-7579
DOI:10.1080/00337578008243079
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
| 24. |
Radiation annealing studies in ion bombarded MgO |
| |
Radiation Effects,
Volume 49,
Issue 1-3,
1980,
Page 127-131
GerdaB. Krefft,
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|
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|
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ISSN:0033-7579
DOI:10.1080/00337578008243080
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
| 25. |
Annealing of lattice damage in ion implanted silicon |
| |
Radiation Effects,
Volume 49,
Issue 1-3,
1980,
Page 133-136
V.D. Tkachev,
C. Schrödel,
A.V. Mudryi,
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|
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|
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ISSN:0033-7579
DOI:10.1080/00337578008243081
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
| 26. |
Influence of ion implantation on the optical properties of silicon |
| |
Radiation Effects,
Volume 49,
Issue 1-3,
1980,
Page 137-140
W. Wesch,
G. Götz,
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|
PDF (303KB)
|
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ISSN:0033-7579
DOI:10.1080/00337578008243082
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
| 27. |
Ion implantation in integrated optics |
| |
Radiation Effects,
Volume 49,
Issue 1-3,
1980,
Page 141-150
N.N. Gerasimenko,
G.M. Tseitlin,
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|
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ISSN:0033-7579
DOI:10.1080/00337578008243083
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
| 28. |
Peculiarities of distribution of defects and introduced impurity in P+-implanted GaAs crystals |
| |
Radiation Effects,
Volume 49,
Issue 1-3,
1980,
Page 151-155
F.F. Komarov,
I.S. Tashlykov,
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|
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ISSN:0033-7579
DOI:10.1080/00337578008243084
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
| 29. |
Ion induced silicide formation in niobium thin films |
| |
Radiation Effects,
Volume 49,
Issue 1-3,
1980,
Page 157-160
S. Matteson,
J. Roth,
M.-A. Nicolet,
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|
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摘要:
MeV4He backscattering and x-ray diffraction analysis were used to examine the intermixing of niobium thin films on single crystal silicon during28Si+ion bombardment. The ambient temperature dependence of the intermixing is reported. The dependence cannot be explained by either radiation-enhanced diffusion or cascade mixing alone. The silicides. NbSi2and Nb5Si3, were both observed. Silicide growth was found to be proportional to the square root of the fluence for the case in which the ion range exceeds the film thickness.
ISSN:0033-7579
DOI:10.1080/00337578008243085
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
| 30. |
The spatial distribution of Si interstitial complex produced in silicon by hydrogen ion implantation |
| |
Radiation Effects,
Volume 49,
Issue 1-3,
1980,
Page 161-164
YuV. Gorelkinskii,
N.N. Nevinnyi,
V.A. Botvin,
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PDF (318KB)
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ISSN:0033-7579
DOI:10.1080/00337578008243086
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
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