ISSN:0033-7579    

DOI:10.1080/00337578008243087

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337578008243088

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337578008243089

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

With the channeling technique the lattice location of both As and B is studied in single As-or B-doped and in doubly As-and B-doped silicon single crystals. The influence of the position of the Fermi-level on the displacement of impurity atoms off substitutional lattice sites is investigated by changing the crystals fromn-top−type or vice versa by choosing implant conditions and annealing termperatures for the doubly doped crystals in an appropriate way. Big changes were found in displacement cross sections for As and B after conversion of the crystals fromn-top-type. The results can be explained by assuming that the interaction between primary defects and impurity atoms causing the displacement of the impurity atom is controlled by Coulomb attraction between charged point defects and the impurity atoms.

ISSN:0033-7579    

DOI:10.1080/00337578008243090

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337578008243091

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

Carrier concentration and mobility dependences on the annealing temperature have been compared for the cases of thermal (10 min) and laser (8 ms) annealing of silicon, implanted with low doses of P+ions. It was found that the recovery of concentration and mobility depended on the heating time in different ways. The laser annealing requires higher temperatures for mobility recovery then the thermal treatment. The same temperature shift was observed for increase of carrier concentration but only after doses less than 3.1012m−2. When the doses exceeded 3.1012cm−2laser and thermal annealing resulted in equal electron concentrations providing the equality of heating temperatures. Annealing of disordered regions was accounted for the mobility recovery. The increase of electron concentration was explained as an instantaneous decay of defect-impurity complexes. To check the validity of the assumptions laser annealing of electron and light ions irradiated materials was investigated.

ISSN:0033-7579    

DOI:10.1080/00337578008243092

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337578008243093

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor