摘要:

Deep level transient spectroscopy has been used to investigate the electrical properties of deep defect states in γ-ray irradiated Ge doped with the isoelectronic elements Pb or Sn. Three deep levels are observed in the irradiated Pb-doped Ge (Ev+0.28 eV, Ec−0.33 eV, Ec−0.39 eV) and two deep levels observed in the Sn-doped Ge (Ev+ 0.19 eV, Ec−0.15 eV). For the same γ-ray irradiation doses, Ge crystals grown from graphite crucibles and doped with Pb or Sn shows about two-thirds the total density of deep level defects observed in undoped Ge grown from synthetic quartz crucibles. All of the defect states observed were removed by a 1 hour, 250°C thermal anneal, and all but the Ec−0.39 eV state in the Pb-doped material were neutralized by exposure to a low pressure atomic hydrogen plasma.

ISSN:0033-7579    

DOI:10.1080/01422448208226905

出版商:Taylor & Francis Group    

年代:1982

数据来源: Taylor

摘要:

Tailored phosphorus implanted emitters in p-type (100) oriented silicon single crystals obtained by superposition of 10 KeV channelled implantation plus 40 KeV random, show a dramatic enhancement of the dopant diffusion caused by the defects. produced during implantation. Diffusion coefficients of the order of 5×10−14and 5×10−13cm2/sec were evaluated by annealing respectively at 650°C and 750°C in N2atmosphere.

ISSN:0033-7579    

DOI:10.1080/01422448208226906

出版商:Taylor & Francis Group    

年代:1982

数据来源: Taylor

摘要:

Radiation damaged fluorite single crystals iso-thermally annealed showed an oscillating structure of the intensity of a diffracted neutron beam. This is in accord with previous report on crystalline cobaltic compound examined for reconstitution of parent complex ions from recoil hot atoms and for annealing of radiation damage by neutron diffraction. The oscillation phenomenon already found by radiochemical means in various solids irrespectively of their chemical constitution combined by a pure physical method as the neutron diffraction, greatly supports a hypothesis of a spatial temporal oscillatory diffusion of defects in isothermal annealing of radiation damaged crystalline lattice.

ISSN:0033-7579    

DOI:10.1080/01422448208226907

出版商:Taylor & Francis Group    

年代:1982

数据来源: Taylor

摘要:

Electron irradiation-induced damage of apatite was observedin situduring examination by transmission electron microscopy. Radiation damage of this type was identified by hexagonally-shaped patches, sometimes as small as 2 unit cells in diameter, with crystallographic edges indicating a faceted three-dimensional shape. A two-dimensional lattice contrast continued throughout the area of the patch. This type of damaging process was interpreted in terms of a radiation-induced voidage model resulting from anion displacement in the apatite crystal structure. After reasonably long periods (>20 mins) of intense electron beam irradiation, local amorphization and collapse of the apatite crystal structure occurred.

ISSN:0033-7579    

DOI:10.1080/01422448208226908

出版商:Taylor & Francis Group    

年代:1982

数据来源: Taylor

摘要:

A surface sputtered by an ion beam often develops a conical or pyramidal micron-sized texture. Such a texture can represent a steady-state surface morphology when formed in conjunction with simultaneous deposition of impurities or seed material.1Cone populations formed solely by the erosion of initial irregularities are usually temporary, disappearing with continued sputtering.2The initiation of cone formation with impurity seeding appears to involve diffusion and clustering of impurity adatoms on the surface.3The shape of a cone usually stabilizes when the angle between the normal to the sides of the cone and the ion beam is such that the sputter yield is maximized. While a cone is stable, it is often seen to have an overlying coating which appears to exhibit quasi-liquid effects such as droplet formation and apparent flow processes.4

ISSN:0033-7579    

DOI:10.1080/01422448208226909

出版商:Taylor & Francis Group    

年代:1982

数据来源: Taylor

摘要:

The stability of the europium second phase precipitates in monocrystalline sodium chloride under room temperature X-irradiation has been analyzed using the photoluminescence technique. It was ascertained that the irradiation tends to destroy the coherent metasta-ble EuCl2-like plate zones creating complexes which appear to be of a much simple nature. In parallel with this destruction an enhanced europium precipitation into the incoherent dihalide phase EuCl2was found to occur.

ISSN:0033-7579    

DOI:10.1080/01422448208226910

出版商:Taylor & Francis Group    

年代:1982

数据来源: Taylor

摘要:

Electron paramegnetic resonance technique has been used to study the effect of boron implantation and subsequent annealing on silicon substrate. The mechanism explaining the physical nature of reverse annealing phenomenon is proposed.

ISSN:0033-7579    

DOI:10.1080/01422448208226911

出版商:Taylor & Francis Group    

年代:1982

数据来源: Taylor