1. |
Subthreshold energy electron beam annealing of tin-implanted silicon |
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Radiation Effects,
Volume 86,
Issue 1,
1984,
Page 1-5
A.M. Oak,
V.S. Vavilov,
M.V. Chukichev,
V.S. Shpinel,
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摘要:
150 keV energy tin ions were implanted in silicon to monitor Mossbauer Effect. The resultant tin-silicon solid solution was subjected to thermal and radiation annealing. Mossbauer spectra reveal that high intensity subthreshold energy electron irradiation leads to disintegration of the solid solution similar to the thermal process.
ISSN:0033-7579
DOI:10.1080/01422448308209665
出版商:Taylor & Francis Group
年代:1984
数据来源: Taylor
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2. |
On the solute enhanced diffusion due to interstitials in irradiated alloys |
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Radiation Effects,
Volume 86,
Issue 1,
1984,
Page 7-13
P. Lucasson,
F. Maury,
A. Lucasson,
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摘要:
The concepts needed to describe interstitial diffusion in alloys are reviewed and discussed.
ISSN:0033-7579
DOI:10.1080/01422448308209666
出版商:Taylor & Francis Group
年代:1984
数据来源: Taylor
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3. |
The formation of target adatoms during the quenching of an energetic ion induced cascade in a crystalline metal surface |
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Radiation Effects,
Volume 86,
Issue 1,
1984,
Page 15-18
R.P. Webb,
D.E. Harrison,
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摘要:
A molecular dynamics computer simulation model has been modified to follow the near surface portion of an ion induced collision cascade to completion. The system dissipates the injected energy and recrystalizes. Studies of the Cu/Ar system for different ion-atom potential functions demonstrate the existance of target adatoms created by long replacement sequences.
ISSN:0033-7579
DOI:10.1080/01422448308209667
出版商:Taylor & Francis Group
年代:1984
数据来源: Taylor
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4. |
Tracks of heavy ions in evaporated AgCl-films |
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Radiation Effects,
Volume 86,
Issue 1,
1984,
Page 19-24
B. Pischel,
J. Assa,
F. Granzer,
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摘要:
Tracks of U238−ions in evaporated AgCl-films could be observeddirectly-i.e. without any amplification process-in the transmission electron microscope.
ISSN:0033-7579
DOI:10.1080/01422448308209668
出版商:Taylor & Francis Group
年代:1984
数据来源: Taylor
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5. |
A modification to defect accumulation models of amorphisation |
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Radiation Effects,
Volume 86,
Issue 1,
1984,
Page 25-28
G. Carter,
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PDF (164KB)
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ISSN:0033-7579
DOI:10.1080/01422448308209669
出版商:Taylor & Francis Group
年代:1984
数据来源: Taylor
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6. |
A critique of semiempirical formulae for the sputtering yield near threshold energy |
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Radiation Effects,
Volume 86,
Issue 1,
1984,
Page 29-34
P.C. Zalm,
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PDF (219KB)
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摘要:
Recently proposed semiempirical formulae for the sputtering yield near threshold energy are examined. By simple theoretical and experimental arguments it is shown that no reliable threshold energies can be extracted from experimental data on the basis of such expressions, as these formulae cannot be used in the energy range where they discriminate against another.
ISSN:0033-7579
DOI:10.1080/01422448308209670
出版商:Taylor & Francis Group
年代:1984
数据来源: Taylor
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