摘要:

Peak energies of axial-channeling radiations of MeV electrons in Si are calculated by the variational method with a orthonormal trial fucntion, where the Doyle-Turner potential is used as the electron-atom interaction. The calculated peak energies for a Si crystal show good agreements with measured ones.

ISSN:0033-7579    

DOI:10.1080/01422448508209696

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

Simple formulae for fast numerical evaluation of deflection angle in the limit of small angle scattering are derived basing on Gauss-Mehler quadratures. They are shown to work well for screened Coulomb potentials.

ISSN:0033-7579    

DOI:10.1080/01422448508209697

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

The formation and complete recrystallization of an amorphous silicon layer during highly intensive Ar ion implantation have been studied. Rutherford backscattering and electron microscopy techniques have shown some specific features of such a crystallization as compared with a conventional thermal annealing. A model of dynamic cascade annealing of secondary defects is suggested to account for the experimental results.

ISSN:0033-7579    

DOI:10.1080/01422448508209698

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

The review of the existing data on the reverse annealing of boron implants in silicon is given. The idea of the exchange reaction of boron substitutionals with silicon selfinterstitials as being responsible for the phenomenon is critically considered. Instead, the possible involvement of oxygen and oxygen-related secondary defects is proposed.

ISSN:0033-7579    

DOI:10.1080/01422448508209699

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

Exchange of hydrogen isotopes between diffusing and trapped populations was found with successive injections of 25 keV D2+and 100 or 140 keV H2+into Al surface by simultaneously detecting elastically recoilled hydrogen and deuterium using 2 MeV He+.

ISSN:0033-7579    

DOI:10.1080/01422448508209700

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

Subsurface disorder created by 40 keV N+bombardment of silicon has been studied for aligned (111) bombardment at various temperatures. It is found that the little or no very near surface disorder is created by implantation, however, the deeper bulk damage production is temperature dependent.

ISSN:0033-7579    

DOI:10.1080/01422448508209701

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

The different damage effects of crystal structures to heavy ion bombardment may be helpful in analyzing complex x-ray diffraction patterns of powder mixtures.

ISSN:0033-7579    

DOI:10.1080/01422448508209702

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

The annealing behaviour of indium implanted silicon (doses 1011−1013atoms/cm2) was studied by time differential perturbed angular correlation spectroscopy. Besides the substitutional site two types of defect configurations were observed. In the as-implanted condition the substitutional In fraction remains below 20% even at the lowest dose. This result is in accordance with the prediction of the track amorphization model.

ISSN:0033-7579    

DOI:10.1080/01422448508209703

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor