摘要:

P-type InSb (nh= 7.5 × 1019m−3) has been irradiated with I-MeV electrons at 7 K followed by isochronal annealing between 80 and 346 K. Changes in carrier mobility and concentration have been monitored. Effects of compensation are elucidated as is the role of shallow defect levels.

ISSN:0033-7579    

DOI:10.1080/00337578108244192

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

Theoretical models used to describe the interaction of electrons with the valence band of insulators are discussed. Results for the application of these models to calculate stopping power and mean-free path of low-energy electrons (< 10 keV) in diamond are presented. The influence of core polarizability, oscillator strength coupling between core and valence electrons, and exchange corrections is included. The contributions to the mean-free path and stopping power from ionization of inner shells have been evaluated from sum-rule-constrained classical binary-collision model.

ISSN:0033-7579    

DOI:10.1080/00337578108244193

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

Consideration is given to the kinetics of development of an ensemble of dislocation loops of the interstitial type and of line edge dislocations in a material which is subjected to uniaxial stress under irradiation. It is shown that at sufficiently high tensile stresses in this system an increased growth of the dislocation loops with Burger's vectors along the load axis leads to evaporation of dislocation loops of other orientations at later stages of irradiation. Estimates are given of characteristic times of this process as functions of the material parameters and irradiation conditions. The rate of radiation creep of the stressed material has been determined, bias factors of the line dislocations obtained with allowance for microscopic processes in the dislocation core being used in its calculation. This gives rise to a temperature dependence of the material creep rate at the initial stages of irradiation, in which case the creep rate increases with decreasing irradiation temperature. It is also shown that at later stages of irradiation the rate of radiation creep of the material is determined by the growth of dislocation loops.

ISSN:0033-7579    

DOI:10.1080/00337578108244194

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

An analytical solution is given for the half-space transport problem for a single-species medium with cross sections of the power-law type. The one-dimensional forward-backward model of Fermi for the scattering and the Kinchin-Pease model of radiation damage are used. The collision density is given in a closed form for the general case in the Laplace domain and is inverted analytically for some special cases of anisotropy and powers of the scattering law. The sputtering spectrum is given and examined in some detail in the energy dependent case. Finally, the relationship between the collision density and the defect distributions is given in the Laplace domain and inverted in a closed form for some illustrative cases.

ISSN:0033-7579    

DOI:10.1080/00337578108244195

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

Resistivity damage rate measurements in electron irradiated pure gold and dilute gold iron alloys were used to gain more information on the thermal behaviour of Frenkel defects in gold. For irradiation temperatures between 12 K and 50 K two different types of defects were assumed for explaining the results. Type I is a stable defect whereas Type II annihilates by thermal activation during the irradiation. The observed annihilation kinetics suggests an explanation of the well-known continuous isochronal recovery of irradiated gold between 5 K and 200 K by Type II defect annihilation.

ISSN:0033-7579    

DOI:10.1080/00337578108244196

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

The problem of the spatial distributions of radiation damage is studied using the Boltzmann transport equation. We assume a plane mononergetic source or foreign atoms injected into an infinite host medium. The displacement damage due to the generation of recoils is calculated by using the straight-ahead, or path-length approximation, to the spatial operator, and a modification of the Goertzel-Greuling technique to the slowing down operator. These two approximations enable the Boltzmann equation to be solved analytically in a number of important situations, and the explicit dependence of the damage on the scattering law can be examined.

ISSN:0033-7579    

DOI:10.1080/00337578108244197

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

Silicon specimens have been irradiated at temperatures up to 650°C, and the resultant structures examined in detail. The principal defect is an extrinsic {113} fault, elongated in ⟨110⟩, with a displacement close toa/11⟨113⟩. Below 500°C these defects may change plane, along their long axes, such that the angle between faces is obtuse. Between 500°C and 600°C isolated {113} faults may unfault, to form interstitial loops on {113}, elongated in ⟨110⟩, withb=a/2⟨1. At 650°C, complex unfaulting, involving two intersecting {113} faults, may occur.

ISSN:0033-7579    

DOI:10.1080/00337578108244198

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

A composite model for amorphousness production in which simultaneous damage annealing is allowed during ion irradiation of semiconductors is presented. Numerical calculations using this model indicate that dose rate effects may be observable under certain favourable conditions thus giving some indication as to the disordering mechanism leading to amorphous production.

ISSN:0033-7579    

DOI:10.1080/00337578108244199

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

We studied the resistivity behaviour during isochronal annealings between room temperature and 500°C of a Ni2Cr alloy which was previously irradiated by a Yag: Nd laser (pulse duration 150 μs, energy 0.85 J). The variations are quite different depending on the preliminary heat treatment and the atomic configuration it induces. Comparison with the variations observed after tensile deformation or neutron irradiation gives information about the nature and migration temperature ranges of the defects created and about the modifications of atomic order due to laser irradiation.

ISSN:0033-7579    

DOI:10.1080/00337578108244200

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

In a previous work1it was shown by computer simulation of point-defect migration that the recombination cross section Ziv, is substantially smaller than normally quoted in literature. In the present work we use a different type of computer program that, unlike the former program, includes the actual recombination event. This makes it possible to cover the range of vacancy concentrations from very high values down to 10−6and to include the case where interstitials and vacancies are equally mobile. We are therefore in a position to establish the dependence of Ziv, on the various relevant parameters. The relation between the present atomistic approach and the alternative continuum approach is discussed.

ISSN:0033-7579    

DOI:10.1080/00337578108244201

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor