摘要:

A method for measuring the stopping power of channeled ions, which does not require the use of thin samples is described.

ISSN:0033-7579    

DOI:10.1080/00337577808237905

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

Galvanomagnetic and thermoelectric results are reported for high-purity InSb electron-irradiated at 10 K. Damage results have been studied for a fluence up to 2.7 × 1018e/cm2and the defect recovery has been investigated between 50 and 220 K. The effects of electrically active defects on the transport properties of InSb are discussed; these are apparently more complicated than has been believed previously; there is strong evidence for a semiconductor-to-metal transition at low temperatures and high defect concentrations.

ISSN:0033-7579    

DOI:10.1080/00337577808237906

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

Argon and xenon retention in silicon has been studied at implantation energies between 10 and 500 keV. The implantation distributions were determined by Rutherford backscattering. The steady state areal densities of the trapped noble gases were found to increase with increasing implantation energy. Sputtering of the implanted gas atoms limits the steady state surface concentration to about 2 at.% argon and 0.2 at.% xenon (estimated from a model calculation by introducing experimental data). The steady state peak concentrations become very large in the case of argon (maximum argon concentration (38 ± 4) at.%). At energies >100 keV the maximum areal densities of argon exceed 2 × 1017atoms/cm2. This large impurity content results in gas agglomeration and blistering. Continuation of bombardment causes repeated formation and rupture of blisters as well as oscillations in argon content of the backing. From electron micrographs, electron microprobe analysis and talysurf measurements the thickness of the blister covers is found to be much smaller than the most probable projected range of the argon ions. All observations are consistent with the idea that formation and rupture of blisters results from the build-up of a high argon pressure. The integrated lateral stress is likely to cause blistering only indirectly in that it promotes agglomeration of the implanted gas.

ISSN:0033-7579    

DOI:10.1080/00337577808237907

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

γ-Radiation induced decomposition of CH2I2dissolved in 3-methyl pentane was examined at 77 K and 300 K using optical absorption spectroscopy and product analysis in order to understand the general features of radiation chemical behaviour of polyhalides. Two new bands absorbing at 385 nm and 570 nm were found following irradiation at 77 K. The 385 nm band was identified as due to CH2I2+. Effects caused by γ-dose rate, irradiation temperature, ionic and free radical scavengers on the yield of the products CH2I, I2and RI were estimated. A mechanism to explain these observations has been suggested.

ISSN:0033-7579    

DOI:10.1080/00337577808237908

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

The shiftδTof the selective reflection temperature due to an exposure to γ-rays is studied for a mixture of cholesteric substances dissolved in various organic solvents. Values ofδTsuch as 0.2°C per krad can be obtained. The influence of the solvent nature (carbon tetrachloride, chloroform, trichloroethylene, …) is also discussed. It is shown that the shiftδTis due to the presence of radiolysis products of the solvent; this effect is more specially studied in the case of carbon tetrachloride containing a radical scavenger.

ISSN:0033-7579    

DOI:10.1080/00337577808237909

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

Ion beams of H, D, He and Ne with incident energies of 1.5 to 20 keV were directed onto a (110)Ni single crystal surface and a polycrystalline, Ni target. Ions and neutral atoms scattered at 15° under specular conditions were energy analyzed. For the single crystal the influence of the crystal orientation with respect to the scattering plane was investigated. The measured energy distributions are compared with MARLOWE computer simulations and with the analytical multiple scattering theory of Firsovet al. Within the errors satisfactory agreement between the results of the experiment and both theories was found. This was possible because the neutral backscattered particles were measured. This avoids difficulties which arise from energy and angular dependences of the neutralization probabilities when only ions are measured.

ISSN:0033-7579    

DOI:10.1080/00337577808237910

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

A computer simulation has been performed to study the creation of Frenkel pairs in electron irradiated copper at 0 K and 293 K. The average radius of Frenkel pairs has been calculated as a function of the recoil energy of the primary knock-on atom. From this, the mean radius of Frenkel pairs created by electron radiation of given energy has been calculated.

ISSN:0033-7579    

DOI:10.1080/00337577808237911

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

Electrical activity of boron implanted silicon layers has been extensively studied by many authors.1-7Ionization is known to affect the transformation processes of simple lattice defects8,9and similar influence was also observed for silicon implanted layers being annealed with ionization generated by uv light, laser beams or high energy electrons.10-13In all these experiments a substantial increase in a recrystallization rate was observed.

ISSN:0033-7579    

DOI:10.1080/00337577808237912

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor