1. |
Chlorobenzoic acids (CBA) as chemical dosimeters for gamma rays |
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Radiation Effects,
Volume 22,
Issue 3,
1974,
Page 145-151
N.K. Shamdasani,
K.N. Rao,
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摘要:
Aqueous solutions ofo-chlorobenzoic acid,m-chlorobenzoic acid andp-chlorobenzoic acid become fluorescent on γ-irradiation. This fluorescence yield can be used for measurement of γ-dose. These three chlorobenzoic acid solutions have been examined for γ-dosimetry under different conditions of concentration, dose rate, pH of irradiation and pH of measurement. Ortho and meta chlorobenzoic acid solutions (10-3M) can be used as γ-ray dosimeters between 5-30,000 and 50-30,000 rads respectively andp-chlorobenzoic acid solution of 10-3M can be used between 50-10,000 rads.
ISSN:0033-7579
DOI:10.1080/10420157408230772
出版商:Taylor & Francis Group
年代:1974
数据来源: Taylor
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2. |
Simulation de l'evolution des defauts dans un reseau par le methode de monte-carlo |
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Radiation Effects,
Volume 22,
Issue 3,
1974,
Page 153-162
Jeanne-Marie Lanore,
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摘要:
La simulation du comportement dcs défauts ponctuels dans un réseau par la méthode de Monte-Carlo a pu étre rendue trés rapide gréce à I'utilistion de lois de probabilité en fonction du temps pour chaque évènement possible (création, disparition ou transformation d'un défaut), évitant ainsi le traitement de chaque saut élémentaire. La technique de simulation est décrite, ainsi que quelques exemples d'application : recuit d'une cascade, trempe et recuits isochrones, agglomération d'interstitiels au cours d'une irradiation aux électrons. Des comparaisons avec d'autrcs méthodes de calcul et avcc des expériences montrent la validité et I'efficacité de cette technique.
ISSN:0033-7579
DOI:10.1080/10420157408230773
出版商:Taylor & Francis Group
年代:1974
数据来源: Taylor
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3. |
A heavy-ion accelerator-electron microscope link for the direct observation of ion irradiation effects |
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Radiation Effects,
Volume 22,
Issue 3,
1974,
Page 163-168
D.S. Whitmell,
W.A. D. Kennedy,
D.J. Mazey,
R.S. Nelson,
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摘要:
A JEM 200A electron microscope has been linked to a 120 kV heavy-ion accelerator in order to observe the dynamic effects of heavy-ion bombardment of materials. The ions, produced in a sputtering ion source, are accelerated, analysed, directed through a flight line and then deflected to strike the specimen in the electron microscope. The effects of the ion bombardment on the specimen are recorded on videotape as they occur. Details of the system and examples of its use are presented.
ISSN:0033-7579
DOI:10.1080/10420157408230774
出版商:Taylor & Francis Group
年代:1974
数据来源: Taylor
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4. |
New epr spectra in neutron-irradiated silicon (II) |
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Radiation Effects,
Volume 22,
Issue 3,
1974,
Page 169-172
Y.H. Lee,
P.R. Brosious,
J.W. Corbett,
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摘要:
Four new EPR spectra, arising from intrinsic defects in silicon created by neutron-irradiation, are resolved. Each spectrum is briefly discussed. Further detailed studies are required to establish defect models.
ISSN:0033-7579
DOI:10.1080/10420157408230775
出版商:Taylor & Francis Group
年代:1974
数据来源: Taylor
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5. |
Frottement interne dans le titane irradie ou ecroui A 77 K |
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Radiation Effects,
Volume 22,
Issue 3,
1974,
Page 173-179
R. Pichon,
E. Bisocni,
P. Moser,
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摘要:
Après irradiation neutronique à 77 K, le titane présente quatre pics de frottement interne. Le premier, et un composant du second, correspondent à la rdorientation d'un interstitiel monoclinique disparaissant en fin de stade I par migration tridimensionnelle.
ISSN:0033-7579
DOI:10.1080/10420157408230776
出版商:Taylor & Francis Group
年代:1974
数据来源: Taylor
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6. |
Proton range and energy in irradiated type 316 stainless steel |
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Radiation Effects,
Volume 22,
Issue 3,
1974,
Page 181-186
D.W. Keefer,
A.G. Pard,
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摘要:
Cross-section transmission-electron-microscope foils of Type 316 stainless steel have been used t o determine the depth to which voids are formed during proton irradiation at energies between 0.75 and 1.05 MeV. These void depths, which can be determined with an accuracy of t5 percent, have been found to exceed by a rather large amount (∼1 0-4 cm) the results from range-energy data tables prepared specifically for stainless steel. Experimental and micro structural features which could lead to this apparent discrepancy are discussed. It is concluded that the depth to which voids are formed gives a good measure of the proton range at a particular energy. Values of calculated proton energy vs penetration which best agree with the experimental depth data are presented.
ISSN:0033-7579
DOI:10.1080/10420157408230777
出版商:Taylor & Francis Group
年代:1974
数据来源: Taylor
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7. |
Studies on irradiation of agar-agar in the solid state: on the changes of infrared spectra of agar-agar film produced by irradiation |
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Radiation Effects,
Volume 22,
Issue 3,
1974,
Page 187-189
Mizuho Nisizawa,
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摘要:
The effects of radiation on the radicals of agar-agar molecule were studied by measuring the infrared spectra at different radiation doses and times after irradiation. The behaviors of infrared spectra against the radiation were observed as follows. The experimental equations for the infrared spectra were given by a) A = a(log X)2+ b log X+c b) A = b - a log t WhereAis the absorbance ratio of radical stretching vibration of the agar-agar Wm,Xis the radiation dose, f is the elapsed time after irradiation, anda,bandcare adjustable constants.
ISSN:0033-7579
DOI:10.1080/10420157408230778
出版商:Taylor & Francis Group
年代:1974
数据来源: Taylor
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8. |
Pinning of dislocations by point defects in low temperature electron irradiated copper |
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Radiation Effects,
Volume 22,
Issue 3,
1974,
Page 191-193
J. Lauzier,
C. Minier,
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摘要:
The variations of modulus and damping in copper were measured during 2 MeV electron irradiations at temperatures between 8 K and 140 K. The measurements were performed at the irradiation temperature and at a reference temperature close to 4 K. In both cases a maximum in the pinning rate of the dislocations, around 70 K, is found and discussed.
ISSN:0033-7579
DOI:10.1080/10420157408230779
出版商:Taylor & Francis Group
年代:1974
数据来源: Taylor
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9. |
Channelling studies of ion implantation induced lattice defects in zinc telluride |
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Radiation Effects,
Volume 22,
Issue 3,
1974,
Page 195-204
A. Bontemps,
E. Ligeon,
R. Danielou,
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摘要:
Channelling effect measurements were used to study the disorder induced by ion implantation in Zinc Telluride at 77 K and 300 K. The experimental set up is described and its principal advantages are (a) the use of a cryogenic pumping (b) the possibility to perform simultaneous implantations and analyses. The channelling parameters of interest are measured: critical angle, minimum yield and stopping power. 120 keV argon implantations are performed a t room temperature. A disorder saturation is evidenced for doses higher than 1015ions/cm2but the “random” level is not reached. Implantations and analyses at 77 K are made. The “random” level is not reached and sputtering during implantation is observed. To explain this saturation the following explanations are proposed: an equilibrium is reached between the defect production and the removal process and/or the iconicity of Zinc Telluride does not allow a complete lattice disordering.
ISSN:0033-7579
DOI:10.1080/10420157408230780
出版商:Taylor & Francis Group
年代:1974
数据来源: Taylor
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10. |
On amorphous layer formation in silicon by ion implantation |
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Radiation Effects,
Volume 22,
Issue 3,
1974,
Page 205-208
J.C. Bourgoin,
J.F. Morhange,
R. Beserman,
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摘要:
The introduction of disorder in silicon caused by the implantation of 70 keV argon ions has been studied using electron paramagnetic resonance and Raman scattering. It is observed that the EPR signal is not saturated when the crystalline structure (as seen by Raman scattering) has totally disappeared. The disorders measured using these two methods are compared with each other and with previously published data. It is concluded that when the saturation of the disorder is observed, it is not possible to assert that a continuous amorphous layer is formed because this saturation is not independent of the experimental technique used. It is also shown that Raman scattering can be a useful and precise technique to monitor the introduction of disorder within an implanted layer.
ISSN:0033-7579
DOI:10.1080/10420157408230781
出版商:Taylor & Francis Group
年代:1974
数据来源: Taylor
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