1. |
Implant profile computation with depth-dependent diffusion |
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Radiation Effects,
Volume 68,
Issue 1,
1982,
Page 1-5
T. Marsh,
R. Collins,
J.J. Jimenez-Rodriguez,
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ISSN:0033-7579
DOI:10.1080/01422448208226876
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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2. |
Fission fragment irradiation of some uranium compounds |
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Radiation Effects,
Volume 68,
Issue 1,
1982,
Page 7-10
E.R. Vance,
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PDF (229KB)
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摘要:
The fission fragment fluence required to render CaUO4, Na2U2O4, MgUO4, Sr2U3O11and u3O8x-ray amorphous was deduced as ∼5 × 1015events cm3. Significant annealing of the structural damage occurred in the 300–-500°C range.
ISSN:0033-7579
DOI:10.1080/01422448208226877
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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3. |
The mobility of γ-ray induced defects in reverse biased germanium n+p diodes |
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Radiation Effects,
Volume 68,
Issue 1,
1982,
Page 11-13
S.J. Pearton,
A.J. Tavendale,
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摘要:
The motion of γ-induced defect centres in reverse biased germanium n+p diodes has been observed using deep level transient spectroscopy. The concentration profile of the Ev+ 0.38 eV centre is presented as a function of the duration of the electric field application. A mobility of 6.4 ± 3.4 × 1014cm2/v.sec at 25°C was obtained for this level, whilst a value of 2.2 ± 1.3 × 10−14cm2/v.sec at 25°C was obtained for the Ev+ 0.18 eV centre.
ISSN:0033-7579
DOI:10.1080/01422448208226878
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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4. |
Reduction in γ-ray damage in hydrogenated germanium |
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Radiation Effects,
Volume 68,
Issue 1,
1982,
Page 15-17
S.J. Pearton,
A.J. Tavendale,
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PDF (209KB)
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摘要:
Deep level transient spectroscopy has been used to observe the reduced concentrations of γ-ray induced defects in Ge containing atomic hydrogen. Data are presented on the efficiency and depth of this damage reduction as a function of the duration and temperature of the exposure of the plasma used to introduce the atomic hydrogen. A 3-hour exposure in an H plasma at 300°C before irradiation reduced the γ-induced defect concentration by half or more to a depth of ∼40 μm, compared with that of the control samples.
ISSN:0033-7579
DOI:10.1080/01422448208226879
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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5. |
Atomic mixing in the depth-dependent diffusion approximation |
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Radiation Effects,
Volume 68,
Issue 1,
1982,
Page 19-23
R. Collins,
J.J. Jimenez-Rodriguez,
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PDF (169KB)
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ISSN:0033-7579
DOI:10.1080/01422448208226880
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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6. |
Reduction in γ-ray damage in hydrogenated silicon |
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Radiation Effects,
Volume 68,
Issue 1,
1982,
Page 25-27
S.J. Pearton,
A.J. Tavendale,
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PDF (198KB)
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摘要:
Deep level transient spectroscopy has been used to observe the reduced concentrations of vacancy-related defects in γ-irradiated n-type Si containing hydrogen atoms. Data are presented on the efficiency and depth of this damage reduction as a function of the duration and temperature of the exposure to the plasma used to introduce the atomic hydrogen. A 3-hour exposure in an H plasma at 300°C prior to irradiation reduced the concentrations of the O-V, V-V and P-V centres by half or more to a depth of ∼20 μm, compared to the control samples.
ISSN:0033-7579
DOI:10.1080/01422448208226881
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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7. |
Spectral-angular distributions op kumakhov radiation for channeled electrons and positrons |
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Radiation Effects,
Volume 68,
Issue 1,
1982,
Page 29-34
F.F. Komarov,
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PDF (331KB)
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摘要:
The spectral-angular characteristics of Kumakhov radiation generated by channeled electrons and positrons in various crystals are considered. The optimal energy interval (up to 1–10 GeV), in which the spectral-energy density of Kumakhov radiation exceeds by a factor of 103to 104the density of bremssfrahlung is determined.
ISSN:0033-7579
DOI:10.1080/01422448208226882
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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