摘要:

In this paper we present the activation energies for CaSO4:Dy (TLD-900) material as evaluated by a decomposition of the experimental glow-curve into single components.

ISSN:0033-7579    

DOI:10.1080/01422448308209637

出版商:Taylor & Francis Group    

年代:1983

数据来源: Taylor

摘要:

Energies for transitions between bound states for planar-channeled electrons are calculated. The continuum planar potential constructed from atomic ones in Molier and Hartree-Fock-Slater approximation are used. It is shown that the H-F-S line energies calculations are in a good agreement with the experimental data for diamond.

ISSN:0033-7579    

DOI:10.1080/01422448308209638

出版商:Taylor & Francis Group    

年代:1983

数据来源: Taylor

摘要:

Continuous, incoherent light from a xenon arc lamp has been used to anneal radiation damage in <100> silicon single crystals produced by implantation of 30−keV arsenic or antimony ions to doses between 1×1015cm−2and 1×1016cm−2. The recrystallized layers have been characterized by Rutherford-backscattering spectroscopy, ion-channeling, Transmission Electron Microscopy, and sheet-resistivity measurements.

ISSN:0033-7579    

DOI:10.1080/01422448308209639

出版商:Taylor & Francis Group    

年代:1983

数据来源: Taylor

摘要:

A kinetic model for the growth of radiation damage based on different types of scattering center is discussed and the exact (implicit) solution is given for the concentrations of trapped interstitials as functions of the fluence.

ISSN:0033-7579    

DOI:10.1080/01422448308209640

出版商:Taylor & Francis Group    

年代:1983

数据来源: Taylor

摘要:

Carbon ion implantation of diamond to high fluence, below the temperature at which diamond growth can occur, usually leads to black layers of high conductivity. This study shows that for a low enough temperature of the diamond during implantation, a black layer with high electrical resistance can develop. In particular, carbon ion implantation at liquid nitrogen temperature, leads to an implanted layer with electrical resistance about one million times higher than the resistance obtained for implantation at temperatures above room temperature.

ISSN:0033-7579    

DOI:10.1080/01422448308209641

出版商:Taylor & Francis Group    

年代:1983

数据来源: Taylor

摘要:

The helium embrittlement of Fe-(0–15)wt%Cr alloys was examined with high temperature tensile testing. Helium injection was performed by using cyclotron and partly by thermal neutron irradiation with boron alloying. The helium embrittlement was severer in lower chromium alloys. Helium bubbles were observed in Fe but not in Fe-15Cr, both of which contained 24 atppm helium tested at 1023K.

ISSN:0033-7579    

DOI:10.1080/01422448308209642

出版商:Taylor & Francis Group    

年代:1983

数据来源: Taylor

摘要:

The influence of hydrogen ion bombardment on the photovoltaic properties of Cu/Cu2O Schottky barrier solar cells was investigated. Two main cases of junction formation process were considered depending on the sequence of applied procedures: thermal evaporation of thin Cu layer and irradiation of the substrate by H+ ion beam.

ISSN:0033-7579    

DOI:10.1080/01422448308209643

出版商:Taylor & Francis Group    

年代:1983

数据来源: Taylor

摘要:

The contribution of quasichanneling positrons to the channeling radiation spectrum is studied in general case with the account of dechanneling and nondipole character of the radiation at high energies. Limits of the dipole approximation are studied depending on the positron energy and the tilt angle of the crystal. Theoretical results show good agreement with experiments on diamond and silicon for 10−GeV positrons at different tilt angles.

ISSN:0033-7579    

DOI:10.1080/01422448308209644

出版商:Taylor & Francis Group    

年代:1983

数据来源: Taylor