| 1. |
The development of tailed-cones on non normal incidence ion bombarded solids |
| |
Radiation Effects,
Volume 58,
Issue 5,
1981,
Page 119-124
G.W. Lewis,
G. Carter,
M.J. Nobes,
S.A. Cruz,
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ISSN:0033-7579
DOI:10.1080/01422448108229074
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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| 2. |
Approximation methods in the analysis of non linear thermal diffusion processes relevant to ion bombardment induced phase changes in solids |
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Radiation Effects,
Volume 58,
Issue 5,
1981,
Page 125-132
G. Carter,
S.A. Cruz,
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PDF (350KB)
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ISSN:0033-7579
DOI:10.1080/01422448108229075
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
|
| 3. |
Implant diffusion with position-dependent diffusion coefficient |
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Radiation Effects,
Volume 58,
Issue 5,
1981,
Page 133-137
R. Collins,
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PDF (196KB)
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ISSN:0033-7579
DOI:10.1080/01422448108229076
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
|
| 4. |
The influence of channelling on the sputtering yield of polycrystalline copper |
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Radiation Effects,
Volume 58,
Issue 5,
1981,
Page 139-144
G.N. Van Wyk,
A.H. Lategan,
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摘要:
Abstract A simple model is proposed to test the applicability of Sigmund's theory to polycrystalline copper targets. A fixed amount of fortuitous chan = nelling is allowed in the target and the sputtering coefficient is calculated by using a combination of single crystal sputtering theory and Sigmund's for= mula. The results indicate that the effect of channelling is to shift the sputtering maximum to higher energy values than predicted by the amorphous target theory. Furthermore, the form of the sputtering yield-energy curves deviate significantly from the Sigmund sputtering curve.
ISSN:0033-7579
DOI:10.1080/01422448108229077
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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| 5. |
Blister formation on a he ion irradiated amorphous metal (metglas 2826a) |
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Radiation Effects,
Volume 58,
Issue 5,
1981,
Page 145-150
G. Carter,
W.A. Grant,
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PDF (771KB)
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ISSN:0033-7579
DOI:10.1080/01422448108229078
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
|
| 6. |
An alternative method for the dechannelling correction in channelling-backscattering experiments |
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Radiation Effects,
Volume 58,
Issue 5,
1981,
Page 151-156
NP Tognetti,
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PDF (351KB)
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摘要:
An alternative procedure to evaluate the dechannelling correction for the extraction of disorder depths distributions, particularly for high levels of disorder, in channelling-backscattering studies is described. It involves the use of experimentally determined values of dechannelling and was used for the extraction of damage distributions in a study of disorder generated by 40 keV N+, P+, As+and Bi+and 20-200 keV Sb+bombardment of (100) GaAs at 40°K. As a result the method appears applicable at least when thermal annealing of disorder is absent. A comparison with various models of small angle scattering is also made.
ISSN:0033-7579
DOI:10.1080/01422448108229079
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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