摘要:

The residual resistivity of alloys with Ni contents between 42 and 71 at. % has been investigated during 3 MeV electron irradiation at 25 K, 82 K, and 95 K as well as during isochronal annealing up to 350 K. During irradiation at the given temperatures the resistivity increases probably due to point defect production. Significant resistivity recovery starts at about 90 K leading to total recovery at temperatures between 120 K and 200 K depending on alloy composition. At higher temperatures the resistivity decrease still proceeds causing strong negative resistivity changes being due to alloy decompositon. From the observed decomposition temperature it is concluded, that the required mass transport is due to interstitialcy migration.

ISSN:0033-7579    

DOI:10.1080/00337577508240810

出版商:Taylor & Francis Group    

年代:1975

数据来源: Taylor

摘要:

Boron was implanted in amorphous silicon at energies in the range 30–200 keV and in polycrystalline silicon at energies in the range 70–800 keV. The boron distributions were measured with secondary ion mass spectrometry. By comparing the boron distributions in amorphous silicon and in polycrystalline silicon it was found that the used polycrystalline silicon behaves similarly to amorphous silicon for the boron stopping process.

ISSN:0033-7579    

DOI:10.1080/00337577508240811

出版商:Taylor & Francis Group    

年代:1975

数据来源: Taylor

摘要:

Results are presented of computer simulations of light ion channelling in crystals which indicate four intervals of initial row impact parameters governing the dechannelling behaviour. The first (smallest impact parameters) causes 90% to 100% dechannelling in the collision with the first row, the second causes dechannelling in collisions with subsequent rows mainly due to the periodicity of the row potential, the third similarly due to subsequent collisions mainly due to thermal vibrations, and the fourth interval, associated with largest impact parameters, is the domain of electron multiple scattering.

ISSN:0033-7579    

DOI:10.1080/00337577508240812

出版商:Taylor & Francis Group    

年代:1975

数据来源: Taylor

摘要:

The damage introduced in a semiconductor is made evident by a change in minority-carrier lifetime. Irradiation by electrons produces relatively low-energy silicon-atom primary recoils which, in turn, produce isolated defect centers. Neutron irradiation produces high-energy recoils which create clusters of damage, as first discussed by Gossick. In the case of proton irradiation, both high–and low-energy recoils are produced. This physical process is used to derive a quantitative means of extrapolating proton damage from electron and neutron data. This is done by using cross-section data or theory to calculate the number of recoil atoms produced with energyEp. IfEp< 20 keV, the defects are “electron-like,”NE; otherwise, they are “neutron-like,”NN. The change in reciprocal lifetime per unit fluence (cm−2) is equal tokENEpluskNNN, wherekE(= 5.4 × 10−9cm2/sec) andkE(= 10−5cm2/sec) are found from appropriate experiments reported in the literature. This rule is used to calculate the lifetime in silicon that has been irradiated by protons. The calculated lifetime compares well with the lifetime that Berman has deduced from solar cell degradation data.

ISSN:0033-7579    

DOI:10.1080/00337577508240813

出版商:Taylor & Francis Group    

年代:1975

数据来源: Taylor

摘要:

The variations of the bulk etching rate of electron-bombarded CN, CA, CAB, PC and PET sheets were studied as a function of electron dose and etching temperature. A conclusion was made that in the plastics under study a radiation-damaged region produced, either by an electron beam or a heavily ionizing nuclear particle display, to a certain extent, analogous etching properties. It was shown that the ratio of the etching rates of an electron-bombarded and an unirradiated sheet increases with the increase of the etching temperature for PC and PET, and with the decrease of etching temperature for CN and CA. Similar temperature dependences were obtained for the ratio of track– and bulk-etching rates (i.e. for registration sensitivity) if the plastic sheets were irradiated with heavier nuclear particles. Our results seem to confirm the assumption that the delta electrons may play an important role in the formation of primary nuclear particle tracks in plastic track detectors.

ISSN:0033-7579    

DOI:10.1080/00337577508240814

出版商:Taylor & Francis Group    

年代:1975

数据来源: Taylor

摘要:

High doses of 3.1014to 3.1016ions/cm2of Ge, Sn, Pb, Pt, Pd, In, Sb and Tl ions have been implanted into silicon and germanium single crystals with energies between 35 and 60 keV. The annealing behaviour of the implanted layers has been studied with electrical and backscattering methods. The change of the electrical properties are correlated with the reordering process of the implanted layer. The damaged layer in the silicon crystal starts to anneal at 600°C and in the germanium crystal at 400°C, nearly independent on the ion species. The reordering process itself is dose dependent, even for doses greater than 1016ions/cm2. Some of the implanted ions can be found as substitutionals after annealing, like Ge in silicon at 600°C and In in germanium at 400°C.

ISSN:0033-7579    

DOI:10.1080/00337577508240815

出版商:Taylor & Francis Group    

年代:1975

数据来源: Taylor

摘要:

The data on the dose dependence of light hydrocarbons radiation yields observed in liquidn-pentane γ-radiolysis can be accounted for to a high degree, assuming that

ISSN:0033-7579    

DOI:10.1080/00337577508240816

出版商:Taylor & Francis Group    

年代:1975

数据来源: Taylor

摘要:

Experiments are described whereby, using Mössbauer spectroscopy, it is possible to understand better the general radiation effects and chemical changes induced by proton bombardment of potassium ferro– and ferricyanides. The method permits the observation of a superparamagnetic behaviour of the magnetic material formed during irradiation.

ISSN:0033-7579    

DOI:10.1080/00337577508240817

出版商:Taylor & Francis Group    

年代:1975

数据来源: Taylor

摘要:

The depth dependence of angular width ψ1/2of the axial dip in the yield of backscattering of protons (E0= 6.3 MeV) from a tungsten single crystal has been investigated experimentally. The interpretation of the results was based on a two-dimensional kinetic equation which accounts for the multiple scattering of channelled particles by electrons and thermal vibrations of the lattice.

ISSN:0033-7579    

DOI:10.1080/00337577508240818

出版商:Taylor & Francis Group    

年代:1975

数据来源: Taylor

摘要:

Aggregation state of transparent solid ammonia, prepared by slow freezing at 193°K, was investigated by three different methods-radiolytical yields comparison for transparent and opaque samples, density measurements, and x-ray diffraction.

ISSN:0033-7579    

DOI:10.1080/00337577508240819

出版商:Taylor & Francis Group    

年代:1975

数据来源: Taylor