摘要:

The dechanneling probability for a He+particle beam which is used for backsattering experiments was investigated at various experimental parameters. These parameters used to get a relation between dechanneling probability and disorder density are stripping depth, annealing temperature, element and dose of the particles which caused the lattice defects by implantation.

ISSN:0033-7579    

DOI:10.1080/00337577408232418

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

The gamma radiolysis of ethyl mercaptan in the mixture of neon, argon and krypton has been studied. Possible mechanisms of products formation have been considered. The distribution of ions formed upon the transfer of reactivity from rare gases to ethyl mercaptan has been estimated.

ISSN:0033-7579    

DOI:10.1080/00337577408232419

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

The effect of electron, proton and radical scavengers on the radiolysis of ethyl mercaptan sensitized by argon has been studied. The mechanism suggested previously involving the neutralization of major positive ion has been confirmed. Ethyl mercaptan was found to be a very strong proton acceptor. The use of radical scavengers provided a valuable informations on reactions of sulphohydryl and thiyl radicals.

ISSN:0033-7579    

DOI:10.1080/00337577408232420

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

Lattice disorder produced by 40 keV indium ions has been studied using conventional channelling and Rutherford backscattering of 2.0 MeV helium ions. Plots of lattice disorder as a function of dose are nonlinear and sigmoidal in shape. The lattice disorder saturates for doses approaching 1014ions. cm−2, the higher the implantation dose rate, the higher this saturation level becomes. By varying the nominal dose rate between 2 × 1010ions. cm−2. sec−1and 1013ions. cm−2. sec−1a series of damage build up curves may be obtained. The dose rate effects can be described by the Vook and Stein model of annealing during irradiation. Direct observation of implantation beam annealing strongly supports this model. Electron diffraction data indicates that no amorphous gallium arsenide phase is produced under the implantation conditions prevailing in this investigation. The dose rate effects together with the room temperature annealing of implanted samples and the behaviour of several “warm” substrate implants, leads to the conclusion that room temperature lies within a damage annealing stage for implanted gallium arsenide. Preliminary high energy implants indicate that the surface proximity of these low energy implants is also an important factor in their annealing behaviour.

ISSN:0033-7579    

DOI:10.1080/00337577408232421

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

Transmission and back-sputtering yields have been measured from epitaxially grown (100) and (111) gold single crystals of 40 A to 400 A thickness, bombarded with Ar+, Kr+and Xe+ions in the energy range 250 eV to 8 keV and at target temperatures between 80 K and 400 K. Combined Electron Microscopy and Microprobe Analysis (EMMA) was used to analyse the sputtered material, which was collected on thin carbon fdms substrates, as well as the gold fdms before and after bombardment.

ISSN:0033-7579    

DOI:10.1080/00337577408232422

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

Irradiation hardening has been investigated in copper crystals irradiated at ∼325 K with 4 × 1020and 8 × 1020n cm−2. In the as-irradiated crystals, cleared channels were produced due to the sweeping up of the irradiation damage by the glide dislocations. The slip band width, spacing and height all increased with increasing testing temperature.

ISSN:0033-7579    

DOI:10.1080/00337577408232423

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

摘要:

This paper is an attempt to trace, without going into details, the inherent logic and major lines of investigations, several results and also some difficulties involved in the study of medium-energy ion scattering by crystals. By “medium energies” is usually meant an energy region in which, strictly speaking, both mechanisms of energy losses (elastic and inelastic) should be taken into account. By tradition, as the limiting energy which demarcates the intervals with different dominant mechanisms of energy losses such an energy is usually accepted, which, being expressed in keV, is equal to atomic number of an incident ion independently of the target material‡ (the so called “simplified criterion of Seitz”).‡ Thus, the “medium energy” region is the energy interval in the neighbourhood of the above-mentioned limiting energy. In other words, this is the range in the order of a few keV to several tens of keV, depending upon the sort of ions used.

ISSN:0033-7579    

DOI:10.1080/00337577408232424

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337577408232425

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337577408232426

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337577408232427

出版商:Taylor & Francis Group    

年代:1974

数据来源: Taylor