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1. |
Ellipsometric study of tellurium implanted silicon |
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Radiation Effects,
Volume 28,
Issue 3-4,
1976,
Page 129-131
A. Kučírková,
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摘要:
Ellipsometric parameters as a function of the dose (D= 2.1013− 2.1015ions cm−2) and annealing temperature have been measured on the silicon implanted with 30 keV Te ions. Obtained information on lattice disorder are to a great extent comparable with those of other methods, e.g. backscattering technique. Moreover optical constants of a damage surface layer may be estimated.
ISSN:0033-7579
DOI:10.1080/00337577608237430
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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2. |
The use of si surface barrier detectors for energy calibration of mev ion accelerators |
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Radiation Effects,
Volume 28,
Issue 3-4,
1976,
Page 133-139
J.B. Mitchell,
S. Agami,
J.A. Davies,
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摘要:
A study of Si detector response has been carried out using beams of monoenergetic (0.5–2.5 MeV) H and4He ions backscattered from a thick gold target, in an attempt to determine if the resulting pulse height could be used as an energy calibration technique. At each chosen energy, the accelerator had been calibrated to within 0.5 kV by means of a suitable nuclear resonance reaction. After applying small corrections for the nuclear (i.e. non-ionizing) energy loss, and for the energy loss in traversing the surface dead layer of the detector, the observed pulse heights are found to be exactly proportional to the energy of the incident H or He ion, within the experimental reproducibility of 0.2%. In the case of4He ions, the linearity of detector response was verified up to 5.48 MeV by means of a standard241Am radioactive source. One strange anomaly is that the energy ϵ to create an electron-hole pair in silicon is significantly smaller for He (and6Li) than for H ions: namely, ϵHe/ϵH= 0.989 and ϵLi/ϵH=0.967. Various mechanisms proposed to explain this difference are not consistent with the observedlineardependence on particle energy. A comparison between H and D ions and between3He and4He ions showed that this difference in detector response was not related to the mass of the incident ion.
ISSN:0033-7579
DOI:10.1080/00337577608237431
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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3. |
The analysis of forward scattering channeling data |
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Radiation Effects,
Volume 28,
Issue 3-4,
1976,
Page 141-145
R. Berliner,
J.S. Koehler,
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摘要:
The use of large angle forward scattering offers the advantage of performing dechanneling measurements at low beam fluences in comparison to the backscattering technique. Here, we present the method for the analysis of forward scattering channeling data and discuss the advantages of the technique.
ISSN:0033-7579
DOI:10.1080/00337577608237432
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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4. |
The ion-atom differential single-scattering cross section in the region of weak screening measured on solid targets |
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Radiation Effects,
Volume 28,
Issue 3-4,
1976,
Page 147-155
H. Knudsen,
P.Møller Petersen,
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摘要:
An accurate method for measuring the single-scattering cross section of ions on solid targets is described and used for 14–31 MeV81Br ions scattered through 3–12° on gold targets. The results agree with the theory of Lindhard, Nielsen and Scharff except for the lowestt½values, where a small deviation is observed. Comparing the present data with earlier published measurements of 0.3–2 MeV H, He, and Li ions scattered on selenium and gold, we conclude that the theoretically predicted scaling laws are fulfilled in the region of weak screening of the Coulomb interaction.
ISSN:0033-7579
DOI:10.1080/00337577608237433
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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5. |
Stage i recovery in electron irradiated iron |
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Radiation Effects,
Volume 28,
Issue 3-4,
1976,
Page 157-167
J.M. Wells,
K.C. Russell,
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摘要:
Stage I recovery of 1.5 MeV electron-irradiated BCC iron has been studied by electrical resistivity measurement.In situannealing of irradiated samples from 40°K to 140°K showed a complex substructure for Stage I recovery in both well annealed and partially recrystallized samples. Activation energies were obtained by Meechan-Brinkman combined isothermal-isochronal anneal method. Activation energies of 0.05, 0.10, 0.19, and 0.23 eV were determined for Substages IA, IB, ICand ID, respectively. The isothermal recovery of Substages IB, IC, and IDis best described by first order kinetics. A trapping interaction between the freely migrating interstitial atom and lattice defects is apparent in Substage IE. Results of this work are compared with other data for electron-irradiated iron and to various recovery models proposed.
ISSN:0033-7579
DOI:10.1080/00337577608237434
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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6. |
Radiation damage in solid butane irradiated by Xe+, Kr+, Ar+, Ne+and He+ions with energies below 1500 eV |
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Radiation Effects,
Volume 28,
Issue 3-4,
1976,
Page 169-175
J. Cailleret,
J.M. Paulus,
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摘要:
Thick solid butane targets cooled at 77°K, containing known molar fractions of iodine, have been irradiated by monoenergetic rare gas ions with energies between 10 eV and 1500 eV. The nature and the importance of the fragmentation of the target molecules have been studied through the analysis of the formed organic iodides. TheGvalues for the overall yield of organic iodides are roughly the same for the various ions investigated and they are energy-independent between 150 eV and 1500 eV. However the mode of fragmentation depends strongly on the nature of the particles, the probability of C-C bonds rupture increasing with the LET. The neutralization energy of the incoming ions is also assumed to play a part in the radiolysis of the target.
ISSN:0033-7579
DOI:10.1080/00337577608237435
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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7. |
A rapid method of predicting the sheet resistances of boron implanted layers |
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Radiation Effects,
Volume 28,
Issue 3-4,
1976,
Page 177-181
K.H. Nicholas,
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摘要:
A new way of calculating the sheet resistance of implanted boron layers annealed at high temperature is described. It is shown to be more accurate than previous methods and is applicable to implants through thin dielectric layers as well as implants into bare silicon and the method is very simple to use. For implants into bare silicon an equation or nomogram is used involving only standard range data and the dose. For implants through a dielectric standard range data in the dielectric and one other graph is needed. Values of conductivity against bulk doping concentration are obtained and compared with previously published data. The boron range in oxide is also compared with previous data.
ISSN:0033-7579
DOI:10.1080/00337577608237436
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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8. |
Secondary ion emission studies of the range profiles of implanted ions |
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Radiation Effects,
Volume 28,
Issue 3-4,
1976,
Page 183-187
J.S. Colligon,
D. Fuller,
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摘要:
The apparatus described provides a universal technique for determining the range profiles of any ion species which has been implanted in a target.
ISSN:0033-7579
DOI:10.1080/00337577608237437
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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9. |
Coulomb capture of muons |
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Radiation Effects,
Volume 28,
Issue 3-4,
1976,
Page 189-194
H. Daniel,
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摘要:
The Coulomb capture of muons accompanied by Auger electron emission has been calculated by treating the process as internal conversion of El γ radiation. Emission of K, LI, LII, LIII, MIand NIelectrons was investigated, and emission of elections from the other M and N subshells was considered in a very rough manner. Conversion coefficients by Hager and Seltzer, and by Dragoun, Pauli and Schmutzler were used. Numerical calculations were carried out forZ= 30 andZ= 60. The results are expected to be best applicable to the case of mono-atomic gases. By extrapolating the values we obtained good agreement with recent experimental results on Ne and A.
ISSN:0033-7579
DOI:10.1080/00337577608237438
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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10. |
Theory of helium migration and trapping in α-Al2O3 |
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Radiation Effects,
Volume 28,
Issue 3-4,
1976,
Page 195-198
D.O. Welch,
O. Lazareth,
G.J. Dienes,
R.D. Hatcher,
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摘要:
The energies characterizing helium migration and trapping in α-Al2O3have been calculated within the framework of the polarizable point-ion shell model developed for α-Al2O3. The helium self-energy, in the octahedral position, is 2.9 eV and the helium migration energy is 2.6 eV. If defects are present in α-Al2O3(arising, for example, from radiation damage) strong trapping of the helium occurs at oxygen vacancies (binding energy 1.7 eV) and at aluminum vacancies (binding energy 1.3 eV). The strong interaction with defects indicates that helium migration as well as the annealing of the defects are retarded by these trapping effects.
ISSN:0033-7579
DOI:10.1080/00337577608237439
出版商:Taylor & Francis Group
年代:1976
数据来源: Taylor
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