1. |
Investigation of electron-irradiated cadmium by diffuse X-ray scattering |
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Radiation Effects,
Volume 55,
Issue 1-2,
1981,
Page 1-7
B. Schöunfeld,
P. Ehrhart,
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摘要:
The change of the diffuse scattering intensity near (OO.h) and (hO.O) Bragg reflections and the electrical resistivity change were investigated at single crystals of cadmium after electron-irradiations (3 MeV) at 4.5 K. Even for the lowest irradiation dose no isolated interstitials but interstitial agglomerates were found at 6K. Their size grew with increasing irradiation dose from 6 (Δρ = 14 nΩm) to 9 (Δρ = 25 nΩm) interstitials per agglomerate. During recovery stage II (to ∼ 100 K.) their size further increased by a factor of about 1.5. These clusters seemed to approach the form of dislocation loops on the basal plane. At the end of stage HI (∼ 145 K) there were indications for the formation of vacancy agglomerates.
ISSN:0033-7579
DOI:10.1080/00337578108225457
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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2. |
The vacuum ultraviolet photolysis of hydrogen chloride. The role of the hot hydrogen atoms |
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Radiation Effects,
Volume 55,
Issue 1-2,
1981,
Page 9-15
A. Jówko,
S.U. Pavlova,
H. Baj,
B.G. Dzantiev,
M. Foryś,
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摘要:
The VuV photolysis of HCl has been performed in the presence of chlorine as an H atom scavenger. Nitrogen and argon were used as moderators.
ISSN:0033-7579
DOI:10.1080/00337578108225458
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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3. |
Energy loss spectra in planar channeling |
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Radiation Effects,
Volume 55,
Issue 1-2,
1981,
Page 17-22
S. Steenstrup,
A.P. Pathak,
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摘要:
Using simple models for the motion of particles in planar channels and for the energy loss and its dependence on the path, energy loss spectra of particles transmitted through thin foils in planar channels are calculated. A comparison with measurements is made.
ISSN:0033-7579
DOI:10.1080/00337578108225459
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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4. |
Kinetics and thermoluminescent parameters of CaSO4: Dy Ribbon, TLD-900, at low dose levels |
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Radiation Effects,
Volume 55,
Issue 1-2,
1981,
Page 23-25
C. Furetta,
P. Gennai,
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摘要:
The purpose of this paper is to investigate the kinetics and trapping parameters of the dosimetric peak of TLD-900 ribbon in low dose region. The order of kinetics followed by the main peak is determined using the shape of the glow peak. The activation energy for the main peak is obtained by three methods: a) shape of the glow peak, b) variable heating rates and c) initial rise. The obtained values agree very closely.
ISSN:0033-7579
DOI:10.1080/00337578108225460
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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5. |
Radiation enhanced diffusion of bromine in sodium chloride crystal |
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Radiation Effects,
Volume 55,
Issue 1-2,
1981,
Page 27-34
M. Kakenko,
N. Matsunami,
N. Itoh,
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摘要:
It is shown that the diffusion of the bromine impurities into a NaCl single crystal is enhanced by MeV He+ion bombardment and that this enhancement is due to the ionization-induced vacancies. The diffused bromine impurities show anomalous depth profile and this is discussed in terms of the concentration-dependent diffusivity.
ISSN:0033-7579
DOI:10.1080/00337578108225461
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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6. |
Defect formation in heavily doped Si upon irradiation |
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Radiation Effects,
Volume 55,
Issue 1-2,
1981,
Page 35-38
V.I. Gubskaya,
P.V. Kuchinskii,
V.M. Lomako,
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摘要:
The rates of the carrier removal and radiation defect (RD) introduction inton- andp-Si in the concentration range of 1014−1017cm−3upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals (n0,p0≤ 1015cm−3), has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and atno,p0> 1017cm−3is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels (Et> l/2Eg).
ISSN:0033-7579
DOI:10.1080/00337578108225462
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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7. |
On the interpretation of Total Current Spectroscopy (TCS) spectra from MoS2crystals |
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Radiation Effects,
Volume 55,
Issue 1-2,
1981,
Page 39-42
MohamedH. Mohamed,
PrebenJ. Møller,
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摘要:
Total Current Spectroscopy (TCS) spectra from MoS2(0001) face for three different angles of incidence of the primary beam with respect to the c-axis as well as TCS spectrum from an edge surface cut perpendicularly to the (0001) face of a molybdenite crystal are given. Energy positions of the TCS structure are found to be independent of the variations in the angle of incidence of the primary beam and also of the change of crystal face. From this it is concluded that the fine structure in the TCS spectra from molybdenite crystal for the primary energies studied is due to electron-electron scattering and not to Bragg interference effects.
ISSN:0033-7579
DOI:10.1080/00337578108225463
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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8. |
Carrier scattering by defect clusters in neutron irradiated silicon |
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Radiation Effects,
Volume 55,
Issue 1-2,
1981,
Page 43-47
R. Swanepoel,
P.T. Wedepohl,
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摘要:
Neutron irradiation introduces both simple defects and complex defects or clusters in silicon. To investigate the effect of defect clusters on the electrical properties, ultra pure silicon was irradiated with high neutron doses. The Hall mobility was measured as function of neutron dose, temperature and annealing temperature. A model has been devised to explain the low value and temperature dependence of the mobility in terms of scattering by charged defect clusters. An estimate of the size of the clusters yields a value of about 20 8, which is in fair agreement with observations made by electron microscopy.
ISSN:0033-7579
DOI:10.1080/00337578108225464
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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9. |
Contribution of anisotropic velocity distribution of recoil atoms to sputtering yields and angular distributions of sputtered atoms |
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Radiation Effects,
Volume 55,
Issue 1-2,
1981,
Page 49-55
Y. Yamamura,
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摘要:
A modified Sigmund's formula is derived, based on the assumption that the transient phenomenon is dominant in low-energy sputtering, i.e., taking into account the anisotropy of the velocity distribution of recoil atoms near the surface. This modified Sigmund's formula is exactly coincident with Matsunami's empirical formula which includes the threshold effect of primary recoil atoms.
ISSN:0033-7579
DOI:10.1080/00337578108225465
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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10. |
A study of secondary molecular ion formation in rare earth and rare earth oxides |
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Radiation Effects,
Volume 55,
Issue 1-2,
1981,
Page 57-65
D.T. Hodul,
W.C. Harris,
G.H. Morrison,
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摘要:
Secondary atomic and molecular ion energy spectra have been obtained for several rare earth and rare earth oxide samples. The energy dependencies of the diatomic ions were found to be a product of the energy dependencies of the atomic ions. Qualitative agreement of this product rule is also found for larger clusters. A recombination mechanism for molecular formation is demonstrated to be consistent with these results. Several preliminary ion implant studies are presented to give further insight into the recombination model.
ISSN:0033-7579
DOI:10.1080/00337578108225466
出版商:Taylor & Francis Group
年代:1981
数据来源: Taylor
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