摘要:

The conditions, the causes and the intensity of the emergency channeling radiation due to collisions with the point defects have been obtained.

ISSN:0033-7579    

DOI:10.1080/01422448408209671

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

Impacts of spontaneous electromagnetic electron (positron) radiation are studied under axial channelling. It is shown that radiative self-polarisation is possible and conditions are created under which this phenomenon can be observed.

ISSN:0033-7579    

DOI:10.1080/01422448408209672

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

The crystallographic orientations of the electric field gradients of 111 In-vacancy-oxygen complexes in pre-oxidized Ag were determined by PAC measurements on single crystals. For comparison with polycrystals, an isothermal annealing program at 350 °C was performed.

ISSN:0033-7579    

DOI:10.1080/01422448408209673

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

Energy transitions due to planar channel ed positrons and electrons in silicon are computed using Tietz screening function. Full explanation of experimental result on energy transitions for both electrons and positrons have been achieved. The energy peaks at 31 ± 2 Kev. and 23 ± 2 Kev. noted in experiment (using 54 Mev. electrons) are now confirmed by the present model.

ISSN:0033-7579    

DOI:10.1080/01422448408209674

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

Tensile tests of 03Cr2ONi45Mo4NbBZr alloy specimens doped with He (3 × 10−3at. %), He (3 × 10−3at. %) + H (9 × 10−3at. %) and H (9 × 10−3at. %) in 650-900°C temperature range have been performed. The results showed that helium embrittles the material at temperatures above 650°C as a rule. The presence of hydrogen in helium doped specimens does not result in any additional changes of alloy ductility. However, in comparison with the initial state hydrogen doping causes some decrease of material ductility at 750–850°C temperatures. Helium doping causes intergranular fracture and fracture of hydrogen doped specimens as well as the undoped ones is transgranular mainly.

ISSN:0033-7579    

DOI:10.1080/01422448408209675

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

It is shown that the damage measured following 40 keV P+ implantation into GaAs at room temperature, depends significantly upon the ion dose rate as well as ion dose. Substantial post-implantation annealing of the damage at room temperature was also observed. The importance of these results in making intercomparisons between different ion species implantation in GaAs is discussed.

ISSN:0033-7579    

DOI:10.1080/01422448408209676

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor