摘要:

Radiation-induced accumulation and annealing processes of radiation defects with level Ec–0,22 eV in silicon of various perfection are analysed and it is concluded that they consist of oxygen and two vacancies (oxygen-divacancy complex).

ISSN:0033-7579    

DOI:10.1080/01422448608209715

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

This work presents a Monte Carlo simulation of ion mixing of a multilayered target. The simulation deals with collisional effects and accounts for the dynamic alteration of the target under ion bombardment. The results refer to As implants, 190 keV, on a target composed of alternating Ni-Ta layers on a Si substrate.

ISSN:0033-7579    

DOI:10.1080/01422448608209716

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

The kinetics of structural and phase transformations in polycrystalline AL layers in the course of nitrogen implantation to the concentrations close to the equilibrium limit of nitrogen solubility, has been studied by transmission electron microscopy and electron diffraction techniques. A model is suggested according to which the nucleation of the ALN phase takes place on radiation-induced stacking faults ({111} habitus) and occurs by means of migration of nitrogen to the defect plane and the filling in the octahedral pores in the region of hexagonal packing of the layers. This process leads to a sequential formation of layers having the wurtzite structure.

ISSN:0033-7579    

DOI:10.1080/01422448608209717

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

Channeling effects in low-index crystallographic directions in Si near the <100> axis are analysed with a Monte Carlo method. The theory is compared with the experimental results reported in literature.

ISSN:0033-7579    

DOI:10.1080/01422448608209718

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/01422448608209719

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

The interaction of Ro radiation with defects in ion-implanted MOS structures is studied using the method of thermally stimulated charge release and C/V method. It is shown that preliminary treatment with Ro radiation decreases the temperature of thermal annealing of the radiation defects introduced by ion-implantation up to 450°C.

ISSN:0033-7579    

DOI:10.1080/01422448608209720

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

The Z1-range oscillation amplitude is investigated as a function of energy for Eu, Yb and Au ions implanted in amorphous Si at energies from 10 to 390 keV. The obtained experimental results are not reproduced by the recent theoretical predictions of Burenkov and collaborators, showing large discrepancies for energies lower than 50 keV.

ISSN:0033-7579    

DOI:10.1080/01422448608209721

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

Diffusion redistribution of ion-implanted boron and phosphorus in silicon at 1000°C in nitrogen, dry-oxygen and wet steam ambients has been inverstigated both experimentally and by computer simulation. Measured diffusion profiles cannot be obtained if we solve the diffusion equation with a constant diffusivity. Supposing that the diffusivity D is a function of dopant concentration N we have obtained the dependences D(N) for considered cases of boron and phosphorus diffusion in silicon. For both impurities the diffusion in oxidizing atmosphera found to be enhanced. The enhancement is stronger for boron than for phosphorus.

ISSN:0033-7579    

DOI:10.1080/01422448608209722

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

An effective approach of calculating scattering angle and time integral in Monte Carlo simulation is described for the Ziegler et al. interatomic potential. The scattering angle is determined using the “magic” formula by Lindhard et al. and that by Biersack et al. in the corresponding regions of p/a and ϵ variation. To calculate the time integral, a simple and rather precise approximation formula was obtained.

ISSN:0033-7579    

DOI:10.1080/01422448608209723

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor