摘要:

We compare the quality of various analytic fitting formulas for the classical differential cross section for exponentially screened Coulomb potentials in the low-energy domain. Such approximations are necessary for rapid evaluation of the transport equation. We also suggest improved fitting formulas with two independent variables for the Molière and the “universal” potential of Biersack and Ziegler. The influence of these approximations on the projected range of ions implanted in amorphous targets is examined in detail.

ISSN:0033-7579    

DOI:10.1080/01422448508205234

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

In this paper we present depth profiles of the aceptor concentration in Si-p after recoil implantation of aluminium. Recoil implantation was carried out using 100 keV Ar ions in the dose range from 1014to 1016i/cm2for the radiation of Al thin film; 730÷1050 Å)-Si (single crystal) systems. Depth profiles were measured by capacity-voltage method in samples annealed in the temperature range from 600°C to 1000°C during 0.5 h. These results were compared to profiles after direct implantation of 30 keV Al ions into silicon.

ISSN:0033-7579    

DOI:10.1080/01422448508205235

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/01422448508205236

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

The influence of the irradiation kind and dislocation density on the rearrangement processes at annealing of radiation defects of different types has been studied.

ISSN:0033-7579    

DOI:10.1080/01422448508205237

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

In this work double crystal X-ray observations are used to determine the lattice damage, induced by oxygen recoils generated by through-oxide implants of Si at 100 KeV on a silicon target. The observations refer to samples annealed at 700 C for 30 min. The strain distributions are compared with a Monte Carlo simulation of the oxygen recoils generated during the implant.

ISSN:0033-7579    

DOI:10.1080/01422448508205238

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

In this work the temperature distribution in the impact region of a silicon target bombarded with N+, P+and As+, ions is calculated by simulating the displacement cascades with a Monte Carlo method and calculating the temperature profile within the individual cascade. In the case of P+and As+very small cascades may form, well below the average cascade volume. They energize hot thermal spikes with temperature above melting. An appreciable disordering results from the cooling of these melted regions containing thousands of atoms.

ISSN:0033-7579    

DOI:10.1080/01422448508205239

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

It is proposed that the characteristic depth of origin of sputtered atoms in the spike regime, as for other collisional regimes, is given by the mean free path of atoms moving, at low energy, towards the surface.

ISSN:0033-7579    

DOI:10.1080/01422448508205240

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor